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公開日期標題作者
四月-2016Analysis of Oxide Trap Characteristics by Random Telegraph Signals in nMOSFETs With HfO2-Based Gate DielectricsChen, Ching-En; Chang, Ting-Chang; You, Bo; Tsai, Jyun-Yu; Lo, Wen-Hung; Ho, Szu-Han; Liu, Kuan-Ju; Lu, Ying-Hsin; Liu, Xi-Wen; Hung, Yu-Ju; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Lu, Ching-Sen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2013Investigation of Lateral Trap Position by Random Telegraph Signal Analysis in Moderate Inversion in n-Channel MOSFETsChen, Ching-En; Chang, Ting-Chang; You, Bo; Lo, Wen-Hung; Ho, Szu-Han; Dai, Chih-Hao; Tsai, Jyun-Yu; Chen, Hua-Mao; Liu, Guan-Ru; Tai, Ya-Hsiang; Tseng, Tseung-Yuen; 電機學院; 電子工程學系及電子研究所; 光電工程學系; College of Electrical and Computer Engineering; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
1-一月-2015A Method to Determine the Located Region of Lateral Trap Position by Analysis of Three-Level Random Telegraph Signals in n-MOSFETsChen, Ching-En; Chang, Ting-Chang; You, Bo; Tsai, Jyun-Yu; Lo, Wen-Hung; Ho, Szu-Han; Liu, Kuan-Ju; Lu, Ying-Hsin; Hung, Yu-Ju; Tseng, Tseung-Yuen; Wu, James; Tsai, Wei-Kung; Chenge, Kuo-Yu; Syu, Yong-En; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2014On the Origin of Anomalous OffCurrent Under Hot Carrier Stress in p-Channel DDDMOS Transistors With STI StructureChen, Ching-En; Chang, Ting-Chang; Chen, Hua-Mao; You, Bo; Yang, Kai-Hsiang; Ho, Szu-Han; Tsai, Jyun-Yu; Liu, Kuan-Ju; Lu, Ying-Hsin; Hung, Yu-Ju; Tai, Ya-Hsiang; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; 光電工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
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