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公開日期標題作者
20043D GOI CMOSFETs with novel IrO2(Hf) dual gates and high-kappa dielectric on 1P6M-0.18 mu m-CMOSYu, DS; Chin, A; Laio, CC; Lee, CF; Cheng, CF; Chen, WJ; Zhu, C; Li, MF; Yoo, WJ; McAlister, SP; Kwong, DL; 交大名義發表; National Chiao Tung University
1-三月-2004Al2O3-Ge-On-insulator n- and p-MOSFETs with fully NiSi and NiGe dual gatesYu, DS; Huang, CH; Chin, A; Zhu, CX; Li, MF; Cho, BJ; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2005Bias-temperature instability on fully silicided-germanided gates/high-k Al2O3CMOSFETsLiao, CC; Yu, DS; Cheng, CF; Chin, A; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2004The copper contamination effect of Al2O3 gate dielectric on SiLiao, CC; Cheng, CF; Yu, DS; Chin, A; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2004Device level characterization for energy bandgap of strain-relaxed SiGe and oxide/SiGe barrier heightHuang, CH; Yu, DS; Chin, A; Chen, WJ; McAlister, SP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2005The effect of IrO2-IrO2-Hf-LaAlO3 gate dielectric on the bias-temperature instability of 3-d GOI CMOSFETsYu, DS; Liao, CC; Cheng, CF; Chin, A; Li, MF; McAlister, SP; 奈米科技中心; Center for Nanoscience and Technology
1-十二月-2003Fully silicided NiSi and germanided NiGe dual gates on SiO2 n- and p-MOSFETsYu, DS; Wu, CH; Huang, CH; Chin, A; Chen, WJ; Zhu, CX; Li, MF; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2003Fully silicided NiSi and germanided NiGe dual gates on SiO2/Si and Al2O3/Ge-on-insulator MOSFETsHuang, CH; Yu, DS; Chin, A; Wu, CH; Chen, WJ; Zhu, CX; Li, MF; Cho, BJ; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2004High hole mobility of Al2O3 mosfets on dislocation free Ge-on-insulator wafersChin, A; Yu, DS; Wu, CH; Huang, CH; Chen, WJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2004High performance metal-gate/high-kappa, MOSFETs and GaAs compatible RF passive devices on Ge-on-Insulator tlechnologyChin, A; Kao, HL; Yu, DS; Liao, CC; Zhu, C; Li, MF; Zhu, SY; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-2006High work function IrxSi gates on HfAlON p-MOSFETsWu, CH; Yu, DS; Chin, A; Wang, SJ; Li, MF; Zhu, C; Hung, BE; McAlister, SP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2004High-density RF MIM capacitors using high-k La2O3 dielectricsYang, MY; Yu, DS; Chin, A; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2005Lanthanide and Ir-based dual metal-gate/HfAlON CMOS with large work-function differenceYu, DS; Chin, A; Wu, CH; Li, MF; Zhu, C; Wang, SJ; Yoo, WJ; Hung, BF; McAlister, SP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2005Low voltage high speed SiO(2)/AlGaN/AlLaO(3)/TaN memory with good retentionChin, A; Laio, CC; Chen, C; Chiang, KC; Yu, DS; Yoo, WJ; Samudra, GS; Wang, T; Hsieh, IJ; McAlister, SP; Chi, CC; 電機學院; College of Electrical and Computer Engineering
1-五月-2006Performance and potential of germanium on insulator field-effect transistorsYu, DS; Kao, HL; Chin, A; McAlister, SP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2005Physics and modeling of Ge-on-Insulator MOSFETsChin, A; Kao, HL; Tseng, YY; Yu, DS; Chen, CC; McAlister, SP; Chi, CC; 交大名義發表; National Chiao Tung University
2005Reducing AC power consumption by three-dimensional integration of Ge-on-insulator CMOS on 1-poly-6-metal 0.18 mu m Si MOSFETsYu, DS; Liao, CC; Chen, CC; Lee, CF; Cheng, CF; Chin, A; McAlister, SP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-2005Three-dimensional metal gate-high-kappa-GOI CMOSFETs on 1-poly-6-metal 0.18-mu m Si devicesYu, DS; Chin, A; Liao, CC; Lee, CF; Cheng, CF; Li, MF; Yoo, WJ; McAlister, SP; 奈米科技中心; Center for Nanoscience and Technology
顯示 1 到 18 筆資料，總共 18 筆