High performance metal-gate/high-kappa, MOSFETs and GaAs compatible RF passive devices on Ge-on-Insulator tlechnology

Abstract

We propose and demonstrate a new VLSI structure using high performance metal-gate/high-kappa MOSFETs and high-Q RF passive devices on Ge-on- Insulator (GOI) platform. In additional to high RF performance passive devices on insulating Si formed by ion implantation. the metal-gate/(La)AiO(3)/GOI MOSFETs have 1.7-2.0X improved electron and hole mobility with the merits of minimizing interfacial reaction., high-kappa crystallization, Fermi-level pinning, and impurity diffusion due to low thermal budget of 500 degrees C RTA.