標題: High performance metal-gate/high-kappa, MOSFETs and GaAs compatible RF passive devices on Ge-on-Insulator tlechnology
作者: Chin, A
Kao, HL
Yu, DS
Liao, CC
Zhu, C
Li, MF
Zhu, SY
Kwong, DL
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2004
摘要: We propose and demonstrate a new VLSI structure using high performance metal-gate/high-kappa MOSFETs and high-Q RF passive devices on Ge-on- Insulator (GOI) platform. In additional to high RF performance passive devices on insulating Si formed by ion implantation. the metal-gate/(La)AiO(3)/GOI MOSFETs have 1.7-2.0X improved electron and hole mobility with the merits of minimizing interfacial reaction., high-kappa crystallization, Fermi-level pinning, and impurity diffusion due to low thermal budget of 500 degrees C RTA.
URI: http://hdl.handle.net/11536/18361
ISBN: 0-7803-8511-X
期刊: 2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS
起始頁: 302
結束頁: 305
Appears in Collections:Conferences Paper