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4-十月-2004Electrical characteristics and suppressed boron penetration behavior of thermally stable HfTaO gate dielectrics with polycrystalline-silicon gateYu, XF; Zhu, CX; Li, MF; Chin, A; Du, AY; Wang, WD; Kwong, DL; 電子物理學系; Department of Electrophysics
1-二月-2003A high-density MIM capacitor (13 fF/mu m(2)) using ALD HfO2 dielectricsYu, XF; Zhu, CX; Hu, H; Chin, A; Li, MF; Cho, BJ; Kwong, DL; Foo, PD; Yu, MB; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-2003High-performance MIM capacitor using ALD high-k HfO2-Al2O3 laminate dielectricsDing, SJ; Hu, H; Lim, HF; Kim, SJ; Yu, XF; Zhu, CX; Li, MF; Cho, BJ; Chan, DSH; Rustagi, SC; Yu, MB; Chin, A; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2003PVD HfO2 for high-precision MIM capacitor applicationsKim, SJ; Cho, BJ; Li, MF; Yu, XF; Zhu, CX; Chin, A; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2004RF, DC, and reliability characteristics of ALD HfO2-Al2O3 laminate MIM capacitors for Si RF IC applicationsDing, SJ; Hu, H; Zhu, CX; Kim, SJ; Yu, XF; Li, MF; Cho, BJ; Chan, DSH; Yu, MB; Rustagi, SC; Chin, A; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 5 筆資料，總共 5 筆