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公開日期標題作者
20043D GOI CMOSFETs with novel IrO2(Hf) dual gates and high-kappa dielectric on 1P6M-0.18 mu m-CMOSYu, DS; Chin, A; Laio, CC; Lee, CF; Cheng, CF; Chen, WJ; Zhu, C; Li, MF; Yoo, WJ; McAlister, SP; Kwong, DL; 交大名義發表; National Chiao Tung University
2004High performance metal-gate/high-kappa, MOSFETs and GaAs compatible RF passive devices on Ge-on-Insulator tlechnologyChin, A; Kao, HL; Yu, DS; Liao, CC; Zhu, C; Li, MF; Zhu, SY; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-2006High work function IrxSi gates on HfAlON p-MOSFETsWu, CH; Yu, DS; Chin, A; Wang, SJ; Li, MF; Zhu, C; Hung, BE; McAlister, SP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2005Lanthanide and Ir-based dual metal-gate/HfAlON CMOS with large work-function differenceYu, DS; Chin, A; Wu, CH; Li, MF; Zhu, C; Wang, SJ; Yoo, WJ; Hung, BF; McAlister, SP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2005Strain-induced very low noise RF MOSFETs on flexible plastic substrateKao, HL; Chin, A; Hung, BF; Lai, JM; Lee, CF; Li, MF; Samudra, GS; Zhu, C; Xia, ZL; Liu, XY; Kang, JF; 電機學院; College of Electrical and Computer Engineering
2004A tunable and program-erasable capacitor on Si with excellent tuning memoryLai, CH; Lee, CF; Chin, A; Zhu, C; Li, MF; McAlister, SP; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 6 筆資料，總共 6 筆