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Thermal stability of W-contacted junction diodes
(1996-06-01)
Yeh, WK
;
Chan, KY
;
Chang, TC
;
Chen, MC
;
Lin, MS
This work investigates the thermal stability of W-contacted p(+)n junction diodes, in which the tungsten contact was formed by selective chemical vapor deposition (CVD) or sputtering process. Reaction of Al and CVD-W at elevated temperature leads to the formation of WAl12, and the barrier capability of CVD-W film was dependent on the consumption of W. The sputter-W film has a columnar structure and contains a higher content of oxygen. The presence of oxygen retarded the formation of WAl12 and thus enhanced the thermal stability of the Al/W/Si structure. However, degradation of the Al/sputter-W (100 nm)/p(+)n diodes occurred after 30 min annealing at 550 degrees C, presumably due to Al diffusion along the grain boundary of sputter-W film. For the CVD-W contacted junction diodes, insertion of a thin TiN barrier layer between the Al and W film was effective in suppressing the formation of WAl12 and thus improved the device's thermal stability.
Chemical mechanical polishing for selective CVD-W
(1997-10-30)
Wang, MT
;
Yeh, WK
;
Tsai, MS
;
Tseng, WT
;
Chang, TC
This work investigates chemical mechanical polishing (CMP) for W-filled contact holes, vias, and trenches by selective chemical vapor deposition. A novel process that combines the CMP technique with selective chemical vapor deposition of tungsten (CVD-W) was employed to remove nail heads due to overgrowth and W-particles on the surface of dielectric due to selectivity loss. The overfilled nail heads and the selectivity loss can be completely removed with very low down-pressure (3 psi) in a very short polishing time (30 s). This indicates that the novel process is very promising for ULSI multilevel interconnection application. The removal rate selectivities of W to thermal oxide, PECVD-TEOS, and BPSG were found to be 47:1, 30:1 and 15:1, respectively, while the selectivities of W to the barrier metals of TiW, Ti and Ta were determined to be 0.6:1, 6:1 and 28:1, respectively. (C) 1997 Elsevier Science S.A.
Interfacial abruptness in Si/SiGe heteroepitaxy grown by ultrahigh vacuum chemical vapor deposition
(1997-09-01)
Tsai, WC
;
Chang, CY
;
Jung, TG
;
Chang, TC
;
Lin, HC
High-quality Si/Si1-xGex strained-layer superlattices have been grown in the temperature range 525 degrees C-550 degrees C by ultrahigh vacuum chemical vapor deposition. We employed X-ray reflection and high-resolution double-crystal X-ray diffraction measurements to study the dimensional and compositional variations in a Si/Si1-xGex superlattice. From the X-ray reflection results, the interfacial roughness of Si layers on SiGe, and SiGe layers on Si, is 0.1nm for growth at 525 degrees C and 0.2nm for growth at 550 degrees C. A simple model for estimating the interfacial abruptness of Si/Si1-xGex heterojunctions is proposed. In this model, a transition region with a linearly graded Ge composition is assumed to exist at both Si/Si1-xGex interfaces. The Ge composition x of a Si/Si1-xGex superlattice is found to increase with the growth time at a constant gas phase composition. This phenomenon can be explained by this model, and the thickness of the transition region and the transition time can be extracted from these fitting results. The transition thicknesses are found to be about 0.3-0.7nm for growth at 525 degrees C and 1-1.5nm for growth at 550 degrees C.
Photoluminescence from ordered and disordered Si-SiGe superlattices
(1996-10-01)
Chang, TC
;
Yeh, WK
;
Mei, YJ
;
Tsai, WC
;
Chen, YF
Ordered (Ord-SL) and disordered (Dis-SL) Si-SiGe superlattices are grown using ultrahigh vacuum chemical vapour deposition (UHVCVD). The results of cross-sectional transmission electron microscopy (XTEM) and high-resolution double crystal x-ray diffraction (HRXRD) indicate that high quality Si-SiGe superlattices can be achieved. Well-defined band-edge excitonic luminescence is observed for the Si0.86Ge0.14-Si superlattice. Stronger phosoluminescence (PL) is observed for the Si-SiGe disordered superlattice compared with the corresponding Si-SiGe ordered superlattice. Furthermore, PL peak energy of the Dis-SL shifts to lower value with respect to the peak position of the corresponding Ord-SL. The stronger intensity of the no-phonon (NP) peak and the red shift of the PL peak are possibly a result of two probable mechanisms: (i) the tunnelling effect and (ii) the formation of localized states.
Chemical mechanical polishing for selective CVD-W
Wang, MT
;
Yeh, WK
;
Tsai, MS
;
Tseng, WT
;
Chang, TC
This work investigates chemical mechanical polishing (CMP) for W-filled contact holes, vias, and trenches by selective chemical vapor deposition. A novel process that combines the CMP technique with selective chemical vapor deposition of tungsten (CVD-W) was employed to remove nail heads due to overgrowth and W-particles on the surface of dielectric due to selectivity loss. The overfilled nail heads and the selectivity loss can be completely removed with very low down-pressure (3 psi) in a very short polishing time (30 s). This indicates that the novel process is very promising for ULSI multilevel interconnection application. The removal rate selectivities of W to thermal oxide, PECVD-TEOS, and BPSG were found to be 47:1, 30:1 and 15:1, respectively, while the selectivities of W to the barrier metals of TiW, Ti and Ta were determined to be 0.6:1, 6:1 and 28:1, respectively. (C) 1997 Elsevier Science S.A.
Chemical mechanical polishing for selective CVD-W
Wang, MT
;
Yeh, WK
;
Tsai, MS
;
Tseng, WT
;
Chang, TC
This work investigates chemical mechanical polishing (CMP) for W-filled contact holes, vias, and trenches by selective chemical vapor deposition. A novel process that combines the CMP technique with selective chemical vapor deposition of tungsten (CVD-W) was employed to remove nail heads due to overgrowth and W-particles on the surface of dielectric due to selectivity loss. The overfilled nail heads and the selectivity loss can be completely removed with very low down-pressure (3 psi) in a very short polishing time (30 s). This indicates that the novel process is very promising for ULSI multilevel interconnection application. The removal rate selectivities of W to thermal oxide, PECVD-TEOS, and BPSG were found to be 47:1, 30:1 and 15:1, respectively, while the selectivities of W to the barrier metals of TiW, Ti and Ta were determined to be 0.6:1, 6:1 and 28:1, respectively. (C) 1997 Elsevier Science S.A.
Highly (111) textured titanium nitride layers for sub- quarter-micrometer Al metallization
(1999-07-01)
Wu, WF
;
Lin, CC
;
Huang, CC
;
Lin, HC
;
Chang, TC
Texture improved TiN films were prepared by a two-step deposition process. A thin uncollimated TiN layer is deposited first at low substrate temperature and sputtering power. This layer has poor step coverage and high resistivity, but acts as a crystallographic seed layer for the subsequent collimated TiN layer deposited at high substrate temperature and sputtering power. The TiN layer stack is deposited sequentially without vacuum break. The resulting TiN layer has a low resistivity of 72.25 mu Omega cm, high <111> preferred orientation, and improved bottom coverage in sub-quarter-micrometer contact holes and trenches. (C) 1999 The Electrochemical Society. S1099-0062(99)01-023-8. All rights reserved.
Effects of hydrogen on electrical and chemical properties of low-k hydrogen silsesquioxane as an intermetal dielectric for nonetchback processes
(1999-08-01)
Chang, TC
;
Liu, PT
;
Shih, FY
;
Sze, SM
;
電子工程學系及電子研究所
The hydrogen plasma and hydrogen ion implantation post-treatments are applied for the first time to low-k hydrogen silsesquioxane (HSQ). These two post-treatments can efficiently abate the poisoned via problem of HSQ as an intermetal dielectric for nonetchback process. Both via resistance and dielectric constant are reduced using the hydrogen post-treatments. We propose that the role of hydrogen is to passivate the dangling bonds in the porous HSQ film and to prevent HSQ from moisture uptake and O-2 plasma attack during the nonetchback integrated process. (C) 1999 The Electrochemical Society. S1099-0062(99)03-022-9. All rights reserved.
Effective strategy for porous organosilicate to suppress oxygen ashing damage
(2002-03-01)
Liu, PT
;
Chang, TC
;
Mor, YS
;
Chen, CW
;
Tsai, TM
Photoresist stripping with oxygen plasma ashing destroys numerous functional groups in porous organosilicate glasses (OSGs), This impact makes the porous OSG relatively hydrophilic and causes low-k dielectric degradation, To mitigate these issues, various strategies are investigated to enhance oxygen plasma resistance of the porous OSG. These include physical and chemical procedures. Both structural and electrical analyses are used to determine their efficiency. In addition, an optimum prescription that consists of H, plasma and chemical trimethylchlorosilane treatment is developed in this work. The enhancement of oxygen plasma resistance can provide the porous OSG for practical application in the multilevel interconnection. (C) 2002 The Electrochemical Society.
Moisture-induced material instability of porous organosilicate glass
(2003-04-01)
Chang, TC
;
Chen, CW
;
Liu, PT
;
Mor, YS
;
Tsai, HM
The mechanism of leakage current of porous organosilicate glass (POSG) with O-2 plasma ashing is investigated. The O-2 plasma ashing often deteriorates the POSG film, causing moisture uptake. We find that the leakage-current mechanism of POSG transforms from Schottky emission into ionic conduction after O-2 plasma treatment. The mobile ions (H+,OH-) supported by absorbing moisture move easily when an external electric field is applied to POSG film, which leads to the ionic conduction leakage current across the moisture-absorbing POSG film. Hence, the leakage current density is drastically increased about four to five orders of magnitude compared with untreated POSG film. (C) 2003 The Electrochemical Society.

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