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Fabrication and characterization of In0.25Ga0.75N/GaN multiple quantum wells embedded in nanorods
(2005-10-01)
Hsueh, TH
;
Sheu, JK
;
Huang, HW
;
Chang, YH
;
Ou-Yang, MC
ln(0.25)Ga(0.75)N/GaN multiple quantum wells embedded in nanorods with diameters of 60-100nm were fabricated by inductively coupled plasma reactive ion etching with Cl-2/Ar plasma. The strong optical emission of the nanorods, observed by micro-photoluminescence measurement at 80 K, reveals a large blue shift of about 90meV and an increase in photoluminescence intensity density of more than 17-fold, compared with that of the as-grown wafer under the same excitation power density of 80W/cm(2). These nanostructures have a high potential for application in efficient GaN-based vertical cavity emitters.
Simulation of 1300-nm In0.4Ga0.6As0.986N0.014/GaAs1-xNx quantum-well lasers with various GaAs1-xNx strain compensated barriers
(2004-11-01)
Chang, YA
;
Kuo, HC
;
Chang, YH
;
Wang, SC
;
光電工程學系
In this article, the laser performance of the 1300-nm In0.4Ga0.6As0.986N0.014/GaAs1 - xNx quantum-well (QW) lasers with various GaAs1 - xNx strain compensated barriers (x = 0%, 0.5%, 1%, and 2%) has been numerically investigated with a laser technology integrated simulation program. The simulation results suggest that with x = 0% and 0.5% can have better optical gain properties and high characteristic temperature coefficient To values of 110 and 94 K at the temperature range of 300-370 K. As the nitrogen composition in GaAs1 - xNx barrier increases more than 1% the laser performance degrades rapidly and the To value decreases to 87 K at temperature range of 300-340 K. This can be attributed to the decrease of conduction band carrier confinement potential between In0.4Ga0.6As0.986N0.014 QW and GaAs1 - xNx barrier and the increase of electronic leakage current. Finally, the temperature dependent electronic leakage current in the InGaAsN/GaAs1 - xNx quantum-well lasers are also investigated. (C) 2004 Elsevier B.V. All rights reserved.
Simulation of 1300-nm In(0.4)Ga(0.6)As(0.986)N(0.014)/GaAs(1-x)N(x) quantum-well lasers with various GaAs(1-x)N(x) strain compensated barriers
(2004-11-01)
Chang, YA
;
Kuo, HC
;
Chang, YH
;
Wang, SC
;
光電工程學系
In this article, the laser performance of the 1300-nm In(0.4)Ga(0.6)As(0.986)N(0.014)/GaAs(1 - x)N(x) quantum-well (QW) lasers with various GaAs(1 - x)N(x) strain compensated barriers (x = 0%, 0.5%, 1%, and 2%) has been numerically investigated with a laser technology integrated simulation program. The simulation results suggest that with x = 0% and 0.5% can have better optical gain properties and high characteristic temperature coefficient To values of 110 and 94 K at the temperature range of 300-370 K. As the nitrogen composition in GaAs(1 - x)N(x) barrier increases more than 1% the laser performance degrades rapidly and the To value decreases to 87 K at temperature range of 300-340 K. This can be attributed to the decrease of conduction band carrier confinement potential between In(0.4)Ga(0.6)As(0.986)N(0.014) QW and GaAs(1 - x)N(x) barrier and the increase of electronic leakage current. Finally, the temperature dependent electronic leakage current in the InGaAsN/GaAs(1 - x)N(x) quantum-well lasers are also investigated. (C) 2004 Elsevier B.V. All rights reserved.
Emission of bright blue light from mesoporous silica with dense Si (Ge) nanocrystals
(2005)
Cho, AT
;
Shieh, JM
;
Shieh, J
;
Lai, YF
;
Dai, BT
Three-dimensional Si (Ge) nanocrystals (NCs) were dispersed within the nanopores of mesoporous silica films by high-density plasma (HDP), low-density plasma, or implantation. Surface states of the resulting Si (Ge) NCs/silica arrays initiate blue-white photoluminescence (PL). HDP makes reactive species highly mobile and enables deposited NCs bonded with pore-wall well, therefore, efficiently constructing photoemission arrays. The mean density of HDP-synthesized semiconducting NCs is as high as 1 x 10(18)/cm(3). Accordingly, blue PL of arrays obtained with HDP, which is 4- 7 times stronger than those obtained with other methods, exhibits quantum-efficiency of 1%, near the reported value for green-to-red light emission from quantum-confined Si NCs. © 2005 The Electrochemical Society. All rights reserved.
Fabrication of p-side down GaN vertical ligbt emitting diodes on copper substrates by laser lift-off
(2004)
Chu, JT
;
Kuo, HC
;
Kao, CC
;
Huang, HW
;
Chu, CF
The fabrication process and performance characteristics of the laser lift-off (LLO) GaN light emitting diodes (LEDs) were investigated. The LLO-GaN LEDs with 300 x 300 mum(2) on Cu show a nearly 4-fold increase in the light output power over the regular LLO-LEDs on the sapphire substrate. High operation current for the LLO-LEDs on Cu was also demonstrated. The large area-emission of 1000 x 1000 Pm 2 of p-side down GaN LLO-LEDs on Cu were fabricated. Further improvement of max light output are achieved. The LLO process should be applicable to other GaN-based light emitting devices in particular for those high light output power and high operation current devices. (C) 2004 WILEY-VCH Verlag GmbH & Co, KGaA, Weinheim.
High performance 1.27 mu m InGaAs : Sb-GaAsP quantum wells vertical cavity surface emitting laser
(2004)
Kuo, HC
;
Chang, YH
;
Lai, FI
;
Lee, PT
;
Wang, SC
High performance 1.27 mum InGaAs:Sb-GaAsP vertical cavity surface emitting lasers (VCSELs) are demonstrated with superior performance and temperature stability. The threshold current changes between 1.8 and 1.1 mA and the slope efficiency drops less than similar to30% when the temperature raised from room temperature to 70degreesC. High modulation bandwidth of 10.1 (8.8) GHz at 25degreesC (70degreesC) and bias current 6 mA are demonstrated.
Fabrication of InGaN multi-quantum-well nanorod by Ni nano-mask
(2004)
Huang, HW
;
Hsueh, TH
;
Kao, CC
;
Chang, YH
;
Ou-Yang, M
InGaN-based light-emitting diode with undercut side wall
(2004)
Kao, CC
;
Chu, JT
;
Huang, HW
;
Peng, YC
;
Yu, CC
Large emitting area GaN based light emitting diode fabricated on conducting copper substrates
(2004)
Chu, JT
;
Liang, WD
;
Chu, CF
;
Kuo, HC
;
Wang, SC
Correlation between surface charge accumulation and excitation intensity dependent red-shifted micro-photoluminescence of Si-implanted quartz with embedded Si nanocrystals
(2004)
Lin, CJ
;
Yu, KC
;
Kuo, HC
;
Ou-Yang, MJ
;
Lin, GR
The excitation intensity dependency of nanocrystallite Si (nc-Si) related micro-photoluminescence (mu-PL) from the multi-recipe Si-implanted quartz is characterized. The mu-PL at 724 nm contributed by nc-Si with 3-4 nm diameter is maximized after annealing at 1100degreesC for 3 hours. By increasing the excitation intensity from 10 kW/cm(2) to 300 kW/cm(2), the mu-PLs of 1-hr and 3-hr annealed quartz significantly red-shift from 723 nm to 725 nm and from 724 nm to 735 nm, respectively. This can be explained by the anomalous quantum stark effect due to a surface electric field oriented from photo-ionized nc-Si dots to quartz surface. After 1-hr illumination at power of 300 kW/cm(2), the mu-PL peak wavelength of 3-hr annealed sample is further red-shifted by 2.5 nm. By measuring the accumulated surface charges built up during optical excitation process, the correlation between excitation -intensity dependent PL wavelength red-shift and the photo-ionized nc-Si surface electric-field related quantum stark effect is primarily elucidated.

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