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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作,涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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Now showing 1 - 10 of 10
  • Item type:Item,
    A comprehensive study of temperature-dependent reflectance and photoluminescence of Zn1-xMnxO thin films grown on c-Al2O3
    (2009-03-01)
    Lin, D. Y.
    ;
    Lin, H. J.
    ;
    Wu, J. S.
    ;
    Chou, W. C.
    ;
    Yang, C. S.
    We present a systematic study of temperature-dependent reflectance (R) and photoluminescence (PL) measurements on ZnMnO films grown by plasma-assisted molecular beam epitaxy. For the first time, the three free-exciton transitions FXA (Gamma(7c)-Gamma(u)(7v)), FXB (Gamma(7c)-Gamma(9v)), and FXC (Gamma(7c)-Gamma(l)(7v)) and the longitudinal-optical phonon replicas of FXB and FXC of ZnMnO films have been clearly observed in the R spectra. The parameters describing the activation energy and the temperature dependence of the transition energy and broadening have been extracted by fitting the experimental R and PL spectra. The spectral data of ZnMnO films not only show the deterioration of crystalline quality with increasing Mn composition fraction but also indicate the Mn clustering caused by Mn atom segregation.
  • Item type:Item,
    Broadband and omnidirectional antireflection from conductive indium-tin-oxide nanocolumns prepared by glancing-angle deposition with nitrogen (Retracted article. See vol. 104, 269901, 2014)
    (2009-02-02)
    Chang, C. H.
    ;
    Yu, Peichen
    ;
    Yang, C. S.
    ;
    光電工程學系
    ;
    Department of Photonics
    Characteristic formation of highly oriented indium-tin-oxide (ITO) nanocolumns is demonstrated using electron-beam evaporation with an obliquely incident nitrogen flux. The nanocolumn material exhibits broadband and omnidirectional antireflective characteristics up to an incidence angle of 70 degrees for the 350-900 nm wavelength range for both s- and p-polarizations. Calculations based on a rigorous coupled-wave analysis indicate that the superior antireflection arises from the tapered column profiles which collectively function as a gradient-index layer. Since the nanocolumns have a preferential growth direction which follows the incident vapor flux, the azimuthal and polarization dependence of reflectivities are also investigated. The single ITO nanocolumn layer can function as antireflection contacts for light emitting diodes and solar cells.
  • Item type:Item,
    Chirped-pulse control of carrier dynamics in low-temperature grown GaAs
    (2011)
    Lee, Chao-Kuei
    ;
    Lin, Sung-Hui
    ;
    Yang, C. S.
    ;
    Pan, Ci-Ling
    ;
    物理研究所
    In this work, using chirped pulse excitation pump-probe technique, we present the results of a study of carrier dynamics modulation in low-temperature-grown GaAs. Increasing carrier relaxation times as varying the excitation chirped conditions from negative to positive is demonstrated and explained by spectral dependence of carrier dynamics in Shockley-Read Hall model. We also indicate that chirped pulse has the feasibility of controlling carrier dynamics in ultrafast optical devices.
  • Item type:Item,
    Growth and optical properties of ZnTe quantum dots on ZnMgSe by molecular beam epitaxy
    (2015-09-01)
    Fan, W. C.
    ;
    Huang, S. H.
    ;
    Chou, W. C.
    ;
    Tsou, M. H.
    ;
    Yang, C. S.
    Self-assembled type-II ZnTe quantum dots (QDs) were grown on GaAs (0 0 1) substrates with Zn1-xMgxSe (x=0.24 and 0.52) buffer layers by molecular beam epitaxy. The optical properties of ZnTe QDs were investigated by low-temperature photoluminescence (PL) and time-resolved PL. An abrupt variation of the PL peak energy with coverage implies the existence of wetting layer of 3.2 MLs and 40 MLs for the Mg concentration x=0.24 and 0.52, respectively. The thickness of wetting layer is larger than that of Zaire QDs grown on ZnSe buffer layers because the strain between ZaTe and Zn1-xMgxSe is smaller. The non-mono-exponential decay profiles reflect the processes of carrier transfer and recapture. The Kohlrausch\'s stretching exponential well fits the decay profiles of ZaTe/Zn1-xMgxSe QDs. (C) 2015 Elsevier B.V. All rights reserved.
  • Item type:Item,
    Gold nanoparticles: BSA (Bovine Serum Albumin) coating and X-ray irradiation produce variable-spectrum photoluminescence
    (2015-01-15)
    Lee, Kuo-Hao
    ;
    Lai, Sheng-Feng
    ;
    Lin, Yan-Cheng
    ;
    Chou, Wu-Ching
    ;
    Ong, Edwin B. L.
    We show that by using different x-ray irradiation times of BSA-coated Au nanoparticles (NPs) we can change their ultraviolet-stimulated photoluminescence and shift the spectral weight over the visible spectral range. This is due to the interplay of two emission bands, one due to BSA and the other related to gold. The emission properties did not change with time over a period of several months. (C) 2014 Published by Elsevier B.V.
  • Item type:Item,
    Optical characterization of ZnMnO thin films on c-Al2O3
    (2008-07-01)
    Lin, H. J.
    ;
    Lin, D. Y.
    ;
    Wu, J. S.
    ;
    Chou, W. C.
    ;
    Yang, C. S.
    Various optical measurement technologies have been used to characterize ZnMnO thin films with different Mn compositions grown by molecular beam epitaxy (MBE) on c-Al2O3 substrates. The lattice constant and the crystalization quality have been evaluated by using X-ray diffraction (XRD). Photoluminescence (PL) has been used to reveal the neutral-donor-bound exciton ((DX)-X-0) and to check the film's quality. Defect-related absorption signatures, in addition to near-band-edge absorption, due to the zinc vacancy and the donor-acceptor pair (DAP) have been found in the surface photovoltage spectra (SPS). Free excitonic transitions and their phonon-assisted replicas have been observed in the reflectance spectra. Our experimental results not only unveil specific optical transition energies but also indicate a rapid material deterioration when Mn incorporation goes beyond a certain amount to cause manganese segregation.
  • Item type:Item,
    Carrier Dynamics in Self-Assembled CdTe Stranski-Krastanow Quantum Dots Grown on ZnSe by Molecular Beam Epitaxy
    (2008-11-01)
    Yang, C. S.
    ;
    Chin, K. F.
    ;
    Lai, J. Y.
    ;
    Luo, C. W.
    ;
    Chou, W. C.
    Self-assembled CdTe/ZnSe Stranski-Krastanow quantum-dot (QD) structures, which have a CdSe-like precursor-layer (PCL) between CdTe quantum dots and ZnSe matrix, were grown by molecular beam epitaxy. The carrier dynamics of the structures was studied by photoluminescence (PL) and time-resolved photoluminescence (TRPL) measurements. The temperature-dependent PL spectra revealed that there is a carrier transformation from small dots to larger dots via the precursor layer. Temperature-dependent PL measurements verify the existence of the QD excited excitonic state in 5.0 mono-layer (ML) coverage. In 0.6 ML coverage, the TRPL spectra exhibited a double-exponential decay process, as the detection energy at PCL emission energy. The faster decay time is corresponded to the carrier lifetime in PCL, the slower decay time exhibits the carrier in small QD. However, in 5.0 ML coverage, a faster and slower decay time represents the carrier lifetime in QD excited state for larger QD and the carrier lifetime in QD ground state for smaller QD.
  • Item type:Item,
    Efficiency Enhancement of GaN/InGaN Vertical-Injection Light Emitting Diodes Using Distinctive Indium-Tin-Oxide Nanorods
    (2009)
    Yang, C. S.
    ;
    Yu, Peichen
    ;
    Chiu, C. H.
    ;
    Chang, C. H.
    ;
    Kuo, H. C.
    Distinctive indium-tin-oxide nanorods are demonstrated using glancing-angle deposition. The nanostructured material exhibit enhanced transmission and is employed to enhance the light-output-power of GaN/InGaN vertical-injection light emitting diodes by 20% at an injection current of 350mA. (C) 2008 Optical Society of America
  • Item type:Item,
    Broadband and omnidirectional antireflection from conductive indium-tin-oxide nanocolumns prepared by glancing-angle deposition with nitrogen
    (2009-02-02)
    Chang, C. H.
    ;
    Yu, Peichen
    ;
    Yang, C. S.
    ;
    光電工程學系
    ;
    Department of Photonics
    Characteristic formation of highly oriented indium-tin-oxide (ITO) nanocolumns is demonstrated using electron-beam evaporation with an obliquely incident nitrogen flux. The nanocolumn material exhibits broadband and omnidirectional antireflective characteristics up to an incidence angle of 70 degrees for the 350-900 nm wavelength range for both s- and p-polarizations. Calculations based on a rigorous coupled-wave analysis indicate that the superior antireflection arises from the tapered column profiles which collectively function as a gradient-index layer. Since the nanocolumns have a preferential growth direction which follows the incident vapor flux, the azimuthal and polarization dependence of reflectivities are also investigated. The single ITO nanocolumn layer can function as antireflection contacts for light emitting diodes and solar cells.
  • Item type:Item,
    A comprehensive study of temperature-dependent reflectance and photoluminescence of Zn(1-x)Mn(x)O thin films grown on c-Al(2)O(3)
    (2009-03-01)
    Lin, D. Y.
    ;
    Lin, H. J.
    ;
    Wu, J. S.
    ;
    Chou, W. C.
    ;
    Yang, C. S.
    We present a systematic study of temperature-dependent reflectance (R) and photoluminescence (PL) measurements on ZnMnO films grown by plasma-assisted molecular beam epitaxy. For the first time, the three free-exciton transitions FX(A) (Gamma(7c)-Gamma(u)(7v)), FX(B) (Gamma(7c)-Gamma(9v)), and FX(C) (Gamma(7c)-Gamma(l)(7v)) and the longitudinal-optical phonon replicas of FX(B) and FX(C) of ZnMnO films have been clearly observed in the R spectra. The parameters describing the activation energy and the temperature dependence of the transition energy and broadening have been extracted by fitting the experimental R and PL spectra. The spectral data of ZnMnO films not only show the deterioration of crystalline quality with increasing Mn composition fraction but also indicate the Mn clustering caused by Mn atom segregation.