<link rel="stylesheet" href="styles.cf390c6bfbe7555f.css">

學術出版;;Publications

Permanent URI for this communityhdl:11536/1

收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

Browse

🏛️國立陽明交通大學機構典藏

Access type: Metadata onlySubject: search.filters.subject.optical properties

Search Results

Now showing 1 - 6 of 6
  • Thumbnail Image
    Item type:Item,
    Morphological, Material, and Optical Properties of ZnO/ZnS/CNTs Nanocomposites on SiO(2)Substrate
    (2020-08-01)
    Tsai, Yu Sheng
    ;
    Lin, Xin Dai
    ;
    Chan, Wei Lun
    ;
    Tsai, Shang Che
    ;
    Liao, Wei Jen
    Ultraviolet A light (UV-A, 320-400 nm), which is unblockable by sunscreen, requires careful detection for disease avoidance. In this study, we propose a novel photosensing device capable of detecting UV-A. Cancer-causing UV light can be simultaneously monitored with tiny rapid response sensors for a high carrier transition speed. In our research, a multifunctional ZnO/ZnS nanomaterial hybrid-sprinkled carbon nanotube (CNT) was created for the purpose of fabricating a multipurpose, semiconductorbased application. For our research, ZnO nanorods (NRs) were grown by using a facile hydrothermal method on SiO(2)substrate, then vulcanized to form ZnO/ZnS coreshell nanorods, which were sprinkled with carbon nanotubes (CNTs). Results indicate that SiO2/ZnO/ZnS/CNT structures exhibited a stronger conducting current with and without light than those samples without CNTs. Multiple material characterizations of the nanostructures, including of atomic force microscopy (AFM) surface morphology evaluation, scanning electron microscopy (SEM), and transmission electron microscopy (TEM) indicate that CNTs could be successfully spread on top of the ZnO/ZnS coreshell structures. Furthermore, chemical binding properties, material crystallinity, and optical properties were examined by X-ray diffraction (XRD), energy dispersive spectroscopy (EDS), and photoluminescence (PL). Owing to their compact size, simple fabrication, and low cost, ZnO/ZnS coreshell NRs/CNT/SiO2-based nanocomposites are promising for future industrial optoelectronic applications.
  • Thumbnail Image
    Item type:Item,
    The influence of Rh doping on the light-induced properties of Bi4Ge3O12 single crystals
    (2009-01-01)
    Marinova, V.
    ;
    Petrova, D.
    ;
    Lin, S. H.
    ;
    Hsieh, M. L.
    ;
    Hsu, K. Y.
    The influence of different doping concentrations of rhodium on the light-induced and holographic properties of BGO crystal is investigated. It is found that Rh addition generates sufficient density of traps for photoinduced charge carriers such that holographic gratings are successfully recorded in the blue-green spectral range. The measured steady state diffraction efficiency at 514 nm is 0.14%, which corresponds to a refractive index modulation of Delta n similar to 1.5 x 10(-6) for higher Rh concentration. A photochromic effect and nonlinear dependence of photoconductivity on light intensity are observed indicating deep level and shallow level contributions to the charge transport mechanism of Rh-doped BGO.
  • Thumbnail Image
    Item type:Item,
    Deposition of indium tin oxide films on polycarbonate substrates by radio-frequency magnetron sputtering
    (1997-04-20)
    Wu, WF
    ;
    Chiou, BS
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    Indium tin oxide (ITO) films have been deposited onto polycarbonate (PC) substrates by radio frequency (rf) magnetron sputtering. The influence of the oxygen content during sputtering on the film morphology, and the electrical and optical properties of the films have been investigated. Both the refractive index and the extinction coefficient decrease with increasing oxygen content. In this study, the figures of merit T-10/R-sh of the films are higher than those for low-temperature sputtered films reported in the literature. (C) 1997 Elsevier Science S.A.
  • Thumbnail Image
    Item type:Item,
    Light-induced and holographic properties of ruthenium and manganese co-doped Bi4Ge3O12 crystals
    (2010-07-01)
    Lin, S. H.
    ;
    Marinova, V.
    ;
    Lin, Y. C.
    ;
    Petrova, D.
    ;
    Chou, W. C.
    The effect of Ru + Mn co-doping on the light-induced properties of Bi4Ge3O12 (BGO) crystals is studied and compared with single Ru- and Mn-doped crystals. Optical absorption spectra of Ru + Mn co-doped crystal demonstrates a photosensitivity shift to the visible spectral range. In addition, a strong photochromic effect, being fully reversible by thermal annealing is observed. It is verified by photoluminescence emission that charge traps could be manipulated under ultraviolet (UV) excitation, as the photoluminescence intensity decreases revealing the existence of the state filling effect. Ru + Mn doping leads to a faster response time during holographic recording at 633 nm and a prolonged read-out process, especially after a preliminary exposure to UV light. The ability to modify the defect structure and corresponding absorption bands suggests the future potential for optical fixing using a two-step sensitization method.
  • Thumbnail Image
    Item type:Item,
    GaSe1-xSx Crystals for Teraherz Frequency Range
    (2009)
    Atuchin, Victor V.
    ;
    Andreev, Yury M.
    ;
    Sarkisov, Sergei Yu.
    ;
    Morozov, A. N.
    ;
    Luo, C. -W.
    GaSe1-xSx single crystals has been grown by Bridgman-Stockbarger technique. Structural quality has been evaluated with TEM observation. Terahertz time-domain spectroscopy has been applied for measurements of the frequency-dependent optical constant of doped GaSe crystals as a function of s-content.
  • Thumbnail Image
    Item type:Item,
    The correlation between the chemical compositions and optical properties of TiSixNy as an embedded layer for AttPSM in 193 nm
    (2001-09-01)
    Loong, WA
    ;
    Lin, CM
    ;
    Tseng, SP
    ;
    Yeh, WL
    ;
    應用化學系
    We reported that the optical and physical properties of TiSixNy thin films formed by sputtering are suitable to be used as an embedded layer in 193 nm. The TiSixNy films were deposited under DC power of Ti target 170-220 W, RF power of Si target 50-110 W, Ar 50 sccm and N-2 3-7 sccm. The increasing of the atomic percentage of nitrogen in TiSixNy has a good agreement with its n and k. With the formation of Si3N4 and TiN structures, the TiSixNy thin film's n started to increase, k to decrease. After the saturation of formations of Si3N4 and TiN structures, the Si and Ti states started to show up, resulted this thin film's n to decrease, and k to increase. The n and k values were calculated by our modified R-T (reflectance-transmittance) method. Controlling a thin film's compositions during sputtering could allow the manipulation of its n and k. (C) 2001 Elsevier Science B.V. All rights reserved.