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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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Access type: Metadata onlySubject: search.filters.subject.radio-frequency (RF)

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Now showing 1 - 6 of 6
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    On-Chip ESD Protection Designs in RF Integrated Circuits for Radio and Wireless Applications
    (2013)
    Ker, Ming-Dou
    ;
    Lin, Chun-Yu
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    CMOS technology has been used to implement the radio and wireless integrated circuits. However, the thinner gate oxide in nanoscale CMOS technology seriously degrades the electrostatic discharge (ESD) robustness. Therefore, on-chip ESD protection designs must be added at all input/output pads in CMOS chip. To minimize the impacts from ESD protection design on circuit performances, ESD protection at input/output pads must be carefully designed. A review on ESD protection designs with low parasitic capacitance for radio and wireless applications is presented in this paper. The comparisons among these ESD protection designs are also discussed.
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    SCR Device for On-Chip ESD Protection in RF Power Amplifier
    (2013)
    Lin, Chun-Yu
    ;
    Ker, Ming-Dou
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    To protect a radio-frequency (RF) power amplifier from electrostatic discharge (ESD) damages, a lowcapacitance, high-robust, and good-latch up-immune ESD protection device was proposed in this work. T he proposed design has been realized in a compact structure in a 65-nm CMOS process. Experimental results of the test devices have been successfully verified, including RF performances, I-V characteristics, and ESD robustness.
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    ESD Protection Design for Wideband RF Applications in 65-nm CMOS Process
    (2014)
    Chu, Li-Wei
    ;
    Lin, Chun-Yu
    ;
    Ker, Ming-Dou
    ;
    Song, Ming-Hsiang
    ;
    Tseng, Jen-Chou
    All wireless communication products must meet the reliability specifications during mass production. To prevent from electrostatic discharge (ESD) damages, the ESD protection designs must be added at all input/output pads in chip. Some ESD protection designs with low parasitic capacitance for radio-frequency (RF) applications are reviewed in this paper. Besides, a novel ESD protection design is proposed and realized in a 65nm CMOS process to protect the wideband RF circuits. In this work, diodes are used for ESD protection and inductors are used for high-frequency performance fine tuning. Experimental results of the test circuits have been successfully verified.
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    Improving ESD Robustness of Stacked Diodes with Embedded SCR for RF Applications in 65-nm CMOS
    (2014)
    Lin, Chun-Yu
    ;
    Fan, Mei-Lian
    ;
    Ker, Ming-Dou
    ;
    Chu, Li-Wei
    ;
    Tseng, Jen-Chou
    To protect the radio-frequency (RF) integrated circuits from the electrostatic discharge (ESD) damage in nanoscale CMOS process, the ESD protection circuit must be carefully designed. In this work, stacked diodes with embedded silicon-controlled rectifier (SCR) to improve ESD robustness was proposed for RF applications. Experimental results in 65-nm CMOS process show that the proposed design can achieve low parasitic capacitance, low turn-on resistance, and high ESD robustness.
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    ESD Self-Protection Design on 2.4-GHz T/R Switch for RF Application in CMOS Process
    (2016)
    Lin, Chun-Yu
    ;
    Liu, Rui-Hong
    ;
    Ker, Ming-Dou
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    An RF transceiver front-end for 2.4GHz applications realized by a fully integrated T/R switch with ESD self-protection capability is presented in this work. Experimental results show that the proposed design without using any additional ESD protection device can provide enough ESD self-protection capability with good RF performances.
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    ESD Protection Structure with Inductor-Triggered SCR for RF Applications in 65-nm CMOS Process
    (2012)
    Lin, Chun-Yu
    ;
    Chu, Li-Wei
    ;
    Ker, Ming-Dou
    ;
    Song, Ming-Hsiang
    ;
    Jou, Chewn-Pu
    To protect radio-frequency (RF) integrated circuits from electrostatic discharge (ESD) damages, silicon-controlled rectifier (SCR) devices have been used as main on-chip ESD protection devices due to their high ESD robustness and low parasitic capacitance in nanoscale CMOS technologies. In this work, the SCR device assisted with an inductor to resonate at the selected frequency band for RF performance fine tune was proposed. Besides, the inductor can be also designed to improve the turn-on efficiency of the SCR device for ESD protection. Verified in a 65-nm CMOS process, the ESD protection design with the inductor-triggered SCR for 60-GHz RF applications can achieve good RF performances and high ESD robustness.