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Now showing 1 - 9 of 9

Exploiting analogue OxRAM conductance modulation for contrast enhancement application
(2020-06-11)
Kumar, A.
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Bezugam, S. S.
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Hudec, B.
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Hou, T. -H.
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Suri, M.
The authors present a unique application of analogue oxide-based resistive memory (OxRAM) device for sensor-level information storage and computation. They show that quality of low-contrast images in low-light can be improved by carefully exploiting OxRAM conductance modulation from specific bi-layer OxRAM material stacks. The proposed methodology involves conversion of light intensity to pulse frequency followed by resistance encoding as different non-volatile OxRAM resistance states.
Scaling down of cobalt quantum-dots by colloidal route for non-volatile memory device application
(2019-10-23)
Yadav, Manoj
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Velampati, Ravi Shankar R.
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Mandal, Debaprasad
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電子工程學系及電子研究所
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Department of Electronics Engineering and Institute of Electronics
The present work details the synthesis of cobalt quantum-dots (Co QDs) with size downscaling to 1-2 nm and their applications in non-volatile memory (NVM) devices. The process of colloidal synthesis is simple and provides the control over a wide range of QDs size. The scaled-down colloidal Co QDs are applied for the NVM device fabrication. Colloidal synthesised Co QDs are spin-coated over silicon dioxide wafer for the fabrication of floating-gate NVM devices. Capacitance-voltage (C-V) and capacitance-time (C-t) measurements of the fabricated NVM device indicate a low voltage operation of device. A sweep voltages as small as 1.2-4 V lead to a flat band voltage shift of 0.35-1.5 V, evidencing the low operating voltage and low power NVM applications. Further, retention characteristics show a robust retention by fabricated NVM device. In addition, C-V measurements are done for the several samples in order to study the process repeatability. The work also is compared with the other processes for the floating gate memory device.
Impedance Spectroscopy of CaCu3Ti4O12 Films Showing Resistive Switching
(2009-01-01)
Shen, Yu-Shu
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Ho, Chia-Cheng
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Chiou, Bi-Shiou
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電子工程學系及電子研究所
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Innovative Packaging Research Center
CaCu3Ti4O12 (CCTO), for resistance random access memory (RRAM) application, was prepared by the sol-gel method. Our preliminary study indicates that CCTO possesses the resistive switching behaviors of RRAM. In this work, the resistance switching characteristics of CCTO films were investigated. The impedance spectroscopy was applied to CCTO films during the switching cycle. Based on the results observed by impedance spectroscopy, the conduction mechanisms of the CCTO RRAMs at the original, ON, and OFF states were explored.
Nitric Acid Oxidation of Si for the Tunneling Oxide Application on CoSi2 Nanocrystals Nonvolatile Memory
(2010-01-01)
Hu, Chih-Wei
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Chang, Ting-Chang
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Tu, Chun-Hao
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Chen, Yang-Dong
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Lin, Chao-Cheng
In this work, nitric acid oxidation was studied to fabricate the tunneling oxide of nanocrystal memory devices. SiO2 about 4 nm thick was formed through oxidizing the sputtered Si film by immersing in nitric acid solution (HNO3:H2O=1:10) for 60 s. After oxide formation, a rapid thermal annealing process set at 700 degrees C for 30 s was used to improve oxide quality. In addition, the formed SiO2 film was analyzed by X-ray photoelectron, capacitance-voltage, and current density-voltage measurements to study the process of the nitric acid oxidation. After the investigation of the nitric acid oxidized SiO2, a 6 nm thick cobalt silicide thin film was deposited and aggregated on the formed SiO2 layer as the charge-trapping layer. The cobalt silicide nanocrystal memory device showed an obvious memory effect and good reliability, which confirms that the nitric acid oxidation method has potential for memory application.
A study of resistive switching effects on a thin FeOx transition layer produced at the oxide/iron interface of TiN/SiO2/Fe-contented electrode structures
(2010-02-01)
Feng, Li-Wei
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Chang, Chun-Yen
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Chang, Yao-Feng
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Chen, Wei-Ren
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Wang, Shin-Yuan
Large (>10(2)) and stable resistance switching characteristics were demonstrated in TiN/SiO2/Fe structure due to the presence of a thin FeOx transition layer at the SiO2/Fe interface, produced spontaneously during the plasma-enhanced tetraethyl orthosilicate oxide deposition process. Addition of Pt into Fe electrode, i.e., a TiN/SiO2/Fe0.73Pt0.27 structure, was observed to improve the data dispersion of switching parameters, associating with the decrease in Fe content inside the FeOx layer. Additionally, current-voltage fitting data shows that current transport mechanism is governed by Ohm's law in low voltage region and Pool-Frenkel behavior in high voltage region, consisting with FeOx phase transition characteristics.
High Density Ni Nanocrystals Formed by Coevaporating Ni and SiO2 Pellets for the Nonvolatile Memory Device Application
(2010-01-01)
Hu, Chih-Wei
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Chang, Ting-Chang
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Tu, Chun-Hao
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Huang, Yu-Hao
;
Lin, Chao-Cheng
We propose a method to fabricate a Ni nanocrystal structure by simultaneously coevaporating Ni and SiO2 pellets. An 800 degrees C rapid thermal annealing was used to enhance the Ni nanocrystals to aggregate. Transmission electron microscopy indicates that the formed Ni nanocrystals show a high density distribution of about 4.5x10(12) cm(-2). Then, the memory device using the Ni nanocrystals as charge-trapping centers was fabricated. The Ni nanocrystal memory device has an obvious memory window under capacitance-voltage measurement. X-ray photoelectron spectroscopy confirms the memory effect results from the Ni nanocrystals embedded in the SiO2 dielectric layer. Moreover, related reliability characteristics have been extracted.
Ti-Induced Recovery Phenomenon of Resistive Switching in ZrO2 Thin Films
(2010-01-01)
Lee, Dai-Ying
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Wang, Sheng-Yu
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Tseng, Tseung-Yuen
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電子工程學系及電子研究所
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Department of Electronics Engineering and Institute of Electronics
In this study, we used W-probe directly contacted with the as-deposited ZrO2 films to perform the resistive switching (RS) phenomenon, and the ZrO2-based device finally came to break down (defined as BD-ZrO2/Pt device). A remarkable phenomenon called "recovery" was observed, where the RS phenomenon appeared again in a broken ZrO2-based device after Ti top electrode deposition. On the contrary, there was no such phenomenon while the Pt and Al top electrodes were deposited on the BD-ZrO2/Pt devices. The Ti-induced recovery phenomenon of RS could be explained by the effects of the interface layer formation. The interface layers, TiOz and ZrOy, served as the oxygen reservoir and the series resistance, respectively, to provide sufficient oxygen ions for inducing the redox reaction of the conducting filament near the ZrOy layer. Moreover, it also interpreted the high yield of the Ti/ZrO2/Pt device. Therefore, the interface engineering of the resistive random access memory device is found very crucial to improve its performance for future commercial applications. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3428462] All rights reserved.
Improvement of resistance switching characteristics in a thin FeOx transition layer of TiN/SiO2/FeOx/FePt structure by rapid annealing
(2010-05-31)
Feng, Li-Wei
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Chang, Chun-Yen
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Chang, Yao-Feng
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Chang, Ting-Chang
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Wang, Shin-Yuan
In this paper, the influence of a 600 degrees C rapid thermal annealing for 60 s on the improvements of resistance switching behaviors in a TiN/SiO2/FeOx/FePt structure is reported. It is found that besides the distinct reduction in memory switching parameters in forming voltage, set/reset voltages, and their dispersions, the resistance ratio of high-resistance state to low-resistance state is also enlarged after annealing. The effects of annealing on improving the resistance switching properties are discussed by x-ray diffraction and x-ray photon-emission spectra depth profile results. Additionally, good retention characteristics are exhibited in the annealed TiN/SiO2/FeOx/FePt resistance switching memory. (C) 2010 American Institute of Physics. [doi:10.1063/1.3428777]
Reducing operation current of Ni-doped silicon oxide resistance random access memory by supercritical CO2 fluid treatment
(2011-12-26)
Chang, Kuan-Chang
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Tsai, Tsung-Ming
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Chang, Ting-Chang
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Syu, Yong-En
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Wang, Chia-C.
In the study, we reduced the operation current of resistance random access memory (RRAM) by supercritical CO2 (SCCO2) fluids treatment. The power consumption and joule heating degradation of RRAM device can be improved greatly by SCCO2 treatment. The defect of nickel-doped silicon oxide (Ni:SiOx) was passivated effectively by the supercritical fluid technology. The current conduction of high resistant state in post-treated Ni:SiOx film was transferred to Schottky emission from Frenkel-Pool due to the passivation effect. Additionally, we can demonstrate the passivation mechanism of SCCO2 for Ni:SiOx by material analyses of x-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3671991]

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