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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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1994 - 19954

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🏛️國立陽明交通大學機構典藏

Access type: Open accessAuthor: search.filters.author.CHAN, SH

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Now showing 1 - 4 of 4
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    CATION SOURCE DEPENDENCE OF GA0.5IN0.5P GROWTH-RATE BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
    (1994-06-15)
    WU, JW
    ;
    CHANG, CY
    ;
    LIN, KC
    ;
    CHAN, SH
    ;
    CHEN, HD
    The Ga0.5In0.5P epilayer was grown by low-pressure metalorganic chemical vapor deposition. Trimethylgallium and triethylgallium were used as the gallium source's, while trimethylindium and ethyldimethylindium were used as the indium sources. The use of triethylgallium incorporated with trimethylindium enhanced the growth rate of Ga0.5In0.5P as compared to incorporation with ethyldimethylindium. While the use of trimethylgallium incorporated with ethyldimethylindium enhanced the growth rate of Ga0.5In0.5P significantly, as compared to incorporation with trimethylindium.
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    INFLUENCE OF METALORGANIC SOURCES ON THE COMPOSITION UNIFORMITY OF SELECTIVELY GROWN GAXIN1-XP
    (1994-09-01)
    CHAN, SH
    ;
    CHANG, CY
    ;
    SZE, SM
    ;
    交大名義發表
    ;
    電子工程學系及電子研究所
    In this work, selective epitaxial growth (SEG) of GaInP on a GaAs substrate patterned with silicon nitride is performed by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The group III sources employed are the combinations of triethylgallium and ethyldimethylindium (TEG+EDMI), triethylgallium and trimethylindium (TEG+TMI), and trimethylgallium and trimethylindium (TMG+TMI). Completely selective epitaxy can be achieved at a growth temperature of 675 degrees C and a growth pressure of 40 Torr when TEG+EDMI is used; while completely selective epitaxy can be achieved under the conditions of 650 degrees C and 40 Torr when the other two sources are used. For the three sources, GaP and InP incorporation increase near the edges of the patterns due to the extra flux of Ga-containing and In-containing species from the region of masking film. Different combinations of group III sources lead to different extents of these incorporations due to the decomposition and diffusion characteristics of the precursors.
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    SELECTIVE EPITAXIAL-GROWTH OF GAINP BY LOW-PRESSURE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION USING ETHYLDIMETHYLINDIUM AS IN-SOURCE
    (1994-10-24)
    CHAN, SH
    ;
    SZE, SM
    ;
    CHANG, CY
    ;
    LEE, WI
    ;
    電子物理學系
    We have demonstrated the feasibility of selective epitaxial growth (SEG) of GaInP using low-pressure metal-organic chemical-vapor deposition (LPMOCVD) with the combination of ethyldimethylindium (EDMIn) and triethylgallium (TEGa) as the group-III sources. Complete selective epitaxy can be achieved at a growth temperature of 675 degrees C and a growth pressure of 40 Torr. The deposition of Ga-rich polycrystalline GaInP on Si3N4 film occurs at lower temperatures. Although the incorporation efficiency of TEGa into GaInP is much lower than that of trimethylgallium, the combination of EDMIn and TEGa has been found to be a good candidate for SEG of GaInP. Low-temperature photoluminescence shows that the selectively grown epitaxial layer has good optical quality and is useful for light emitting device applications. (C) 1994 American Institute of Physics.
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    BACK-GATING EFFECTS ON THE GA0.1IN0.8P/INP/INGAAS HIGH-ELECTRON-MOBILITY TRANSISTOR
    (1995-07-01)
    LIN, KC
    ;
    CHANG, CY
    ;
    WU, CC
    ;
    CHEN, HD
    ;
    CHEN, PA
    Pseudomorphic GaInP/InP/InGaAs high electron mobility transistors (HEMT) with improved Schottky contacts and excellent electrical characteristics are grown by low-pressure metal-organic chemical vapor deposition (LP-MOCVD) on the InP substrate. These HEMTs with 1.71 mu m gate length have an average extrinsic transconductance of 225 mS/mm. The back-gating effects of this device structure are investigated for the first time in this structure. Both positive and negative bias are applied to the ohmic and Schottky back-gate contacts of these devices. The positive back-gate bias has no effect on the drain current or the output transconductances of these devices. The effect of the negative back-gate bias is very similar to that when negative bias is applied on the gate of these HEMTs.