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Effect of Hydrogen Dilution on the Intrinsic a-Si:H Film of the Heterojunction Silicon-Based Solar Cell
(2011)
Hsiao, Jui-Chung
;
Chen, Chien-Hsun
;
Lin, Chao-Cheng
;
Wu, Der-Ching
;
Yu, Peichen
In this work, effects of a hydrogen dilution ratio on the intrinsic amorphous hydrogenated silicon (i-a-Si:H) film of heterojunction silicon-based (HJS) solar cells were systematically studied. Long lifetime samples were obtained for R <= 5, indicating a good a-Si:H/c-Si interface. The dark conductivity was drastically decreased for R >= 2, indicating a good film quality. Consequently, an optimized power conversion efficiency of the HJS solar cells was obtained at a moderate R between 2 and 5. In contrast to the previous emphasis on long lifetime, the results indicate that both the interface and film qualities are correlated to the hydrogen dilution, which are important to achieve high-efficiency HJS solar cells. We show that the most optimized HJS solar cell exhibits a marked efficiency of 17.27%. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3607981] All rights reserved.
Highly textured ZnO:B films grown by low pressure chemical vapor deposition for efficiency enhancement of heterojunction silicon-based solar cells
(2013-09-01)
Hsiao, Jui-Chung
;
Chen, Chien-Hsun
;
Yang, Hung-Jen
;
Wu, Chien-Liang
;
Fan, Chia-Ming
This paper demonstrates the growth of highly-textured boron-doped ZnO (ZnO:B) film by using low-pressure chemical-vapor-deposition (LPCVD) for efficient light harvesting and carrier collection in heterojunction silicon-based (HJS) solar cells. The optical and electrical characteristics have been optimized versus the substrate temperature and B2H6 flow rate for tradeoffs among the sheet resistance, free-carrier absorption, and optical transmission of blue/green wavelengths. A HJS solar cell with a 1.6-mu m-thick ZnO:B film achieves a high power conversion efficiency of 16.30% and fill factor of 78.05%, compared to 15.64% and 72.17%, respectively, from a counterpart with a conventional 80-nm-thick indium tin oxide layer. (C) 2013 Taiwan Institute of Chemical Engineers. Published by Elsevier B.V. All rights reserved.
Effect of Top Electrode Material on Resistive Switching Characteristics in MnO2 Nonvolatile Memory Devices
(2011)
Tsai, Yu-Ting
;
Chang, Ting-Chang
;
Lin, Chao-Cheng
;
Chiang, Lan-Shin
;
Chen, Shih-Cheng
The influence of top electrode material on the resistive switching properties of MnO2-based memory film using Pt as a bottom electrode was investigated in this study. In comparison with Pt/MnO2/Pt and Al/ MnO2/Pt devices, the Ti/ MnO2/Pt device exhibits resistive switching current-voltage (I-V) curve, which can be traced and reproduced more than 10(5) times only showing a little decrease of resistance ratio between high and low resistance states. Furthermore, transmission electron microscopy analyses are used to confirm the crystalline structure of MnO2 on Pt bottom electrode. Secondary ion mass spectrometry reveals a change of oxygen distribution in MnO2 thin film due to material characteristic of variant top electrodes. We suggest that the interface between MnO2 and electrodes play an important role on the resistive switching behaviors.
Low temperature synthesis and electrical characterization of germanium doped Ti-based nanocrystals for nonvolatile memory
(2011-11-30)
Feng, Li-Wei
;
Chang, Chun-Yen
;
Chang, Ting-Chang
;
Tu, Chun-Hao
;
Wang, Pai-Syuan
Chemical and electrical characteristics of Ti-based nanocrystals containing germanium, fabricated by annealing the co-sputtered thin film with titanium silicide and germanium targets, were demonstrated for low temperature applications of nonvolatile memory. Formation and composition characteristics of nanocrystals (NCs) at various annealing temperatures were examined by transmission electron microscopy and X-ray photon-emission spectroscopy, respectively. It was observed that the addition of germanium (Ge) significantly reduces the proposed thermal budget necessary for Ti-based NC formation due to the rise of morphological instability and agglomeration properties during annealing. NC structures formed after annealing at 500 degrees C, and separated well at 600 degrees C annealing. However, it was also observed that significant thermal desorption of Ge atoms occurs at 600 degrees C due to the sublimation of formatted GeO phase and results in a serious decrease of memory window. Therefore, an approach to effectively restrain Ge thermal desorption is proposed by encapsulating the Ti-based trapping layer with a thick silicon oxide layer before 600 degrees C annealing. The electrical characteristics of data retention in the sample with the 600 degrees C annealing exhibited better performance than the 500 C-annealed sample, a result associated with the better separation and better crystallization of the NC structures. (C) 2011 Elsevier B.V. All rights reserved.
Formation and composition of titanium oxinitride nanocrystals synthesized via nitridizing titanium oxide for nonvolatile memory applications
(2011-09-01)
Feng, Li-Wei
;
Chang, Chun-Yen
;
Chang, Ting-Chang
;
Tu, Chun-Hao
;
Wang, Pai-Syuan
Formation and composition analyses of titanium oxinitride nanocrystals (NCs) fabricated via treating a magnetron co-sputtered thin film of titanium and silicon dioxide with a rapid thermal annealing in nitrogen ambient were demonstrated for nonvolatile memory applications. Phase separation characteristics with different annealing conditions were examined by transmission electron microscopy and chemical bonding characteristics were confirmed by X-ray photon emission spectra. It was observed that a blanket layer composed mainly of titanium oxide was still present as annealing temperature was increased to 700 degrees C, associated with the thermodynamically stable phase of titanium oxide. Furthermore, a higher thermal treatment of 900 degrees C induced formation of a well-separated NC structure and caused simultaneously partial nitridation of the titanium oxide, thereby forming titanium oxinitride NCs. A significant capacitance-voltage hysteresis in threshold voltage shift at 1 V was easily achieved under a small sweeping voltage range of + 2 V/-2 V, and a memory window retention of 2.2 V was obtained after 10(7) s by extrapolation under a 1 s initial-program/erase condition of +5 V/-5 V, respectively. (C) 2011 Elsevier B.V. All rights reserved.
Resistive switching mechanisms of V-doped SrZrO3 memory films
(2006-09-01)
Lin, Chun-Chieh
;
Tu, Bing-Chung
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Lin, Chao-Cheng
;
Lin, Chen-Hsi
;
Tseng, Tseung-Yuen
The resistive switching behaviors of sputtered V-doped SrZrO3 (V:SZO) memory films were investigated in this letter. The current states of the memory films were switched between high current state (H-state) and low current state (L-state). The resistance ratio of the two current states was over 1000 at a read voltage. The switching mechanism from L- to H-state corresponds to the formation of current paths. However, this mechanism from H- to L-state is thought to be due to the fact that the defects present in the V:SZO film randomly trap electrons, and hence, the current paths are ruptured. The conduction mechanism of the H-state is dominated by ohmic conduction, whereas the L-state conduction is dominated by Frenkel-Poole emission. The polarity direction of the resistive switching is an intrinsic property of the SrZrO3 oxides. The V:SZO films with high uniformity and good stability are expected to be used in nonvolatile memory.
Charge storage characteristics of Mo nanocrystal dependence on Mo oxide reduction
(2008-12-01)
Lin, Chao-Cheng
;
Chang, Ting-
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Tu, Chun-Hao
;
Chen, Wei-Ren
;
Hu, Chih-Wei
An oxygen incorporated Mo silicide was explored to form the Mo nanocrystals after rapid thermal annealing. Transmission electron microscopy showed the nanocrystals embedded in SiO(x). Charge storage characteristics of Mo nanocrystals influenced by the Mo oxide and the surrounding oxide were investigated through x-ray photoelectron spectroscopy and the electrical measurement. X-ray photoelectron spectra analyses revealed the redox reaction in the oxygen incorporated Mo silicide layer after rapid thermal annealing. The memory window and retention were improved due to reduction in Mo oxide.
Improvement of Charge-Storage Characteristics of Mo Nanocrystal Memory by Double-Layer Structure
(2009)
Lin, Chao-Cheng
;
Chang, Ting-Chang
;
Tu, Chun-Hao
;
Chen, Wei-Ren
;
Feng, Li-Wen
An oxygen-incorporated Mo silicide layer was explored to form the Mo nanocrystals after rapid thermal annealing. Transmission electron microscopy showed the nanocrystals embedded in SiO(x). Charge-storage characteristics of Mo nanocrystals influenced by Mo oxide and its surrounding oxide were investigated through X-ray photoelectron spectroscopy and electrical measurement. X-ray photoelectron spectral analyses revealed a redox reaction in the oxygen-incorporated Mo silicide layer after rapid thermal annealing at a critical temperature. The memory window and retention were improved because of the reduction of Mo oxide. Furthermore, the double-layer nanocrystal structure was fabricated through the annealed stacked oxygen incorporated Mo silicide layer. A larger memory window and long retention were found for the double-layer nanocrystal structure. We used an energy band diagram to explain the difference in retention characteristics between single- and double-layer structures.
Enhancement of NiSi-Based Nanocrystal Formation by Incorporating Ge Elements for Nonvolatile Memory Devices
(2009)
Hu, Chih-Wei
;
Chang, Ting-Chang
;
Tu, Chun-Hao
;
Chiang, Cheng-Neng
;
Lin, Chao-Cheng
In this work, a NiSiGe mixed film was deposited by the cosputtering approach. The rapidly thermal treatment condition was executed at 600 degrees C for 30 s in nitrogen ambient to form the nanocrystal structure. From the results of the transmission electron microscopy, the annealed NiSiGe film reveals a larger nanocrystal size and density distribution than pure NiSi. X-ray photoelectron spectroscopy analyses were used to confirm that the Ge elements provide the additional nucleation centers and enhance the nanocrystal formation during the thermal process. Raman spectroscopy and an energy-dispersive spectrometer also exhibit the compositions of nanocrystals including Ni, Si, and Ge elements. With the better formation process, a remarkable improvement of memory effect is observed by comparing with the NiSi and NiSiGe nanocrystal memory devices. Also, the NiSiGe nanocrystal device shows a better retention characteristic due to the lower quantum confinement effect.
Charge Storage Characteristics of Mo Nanocrystal Memory Influenced by Ammonia Plasma Treatment
(2009)
Lin, Chao-Cheng
;
Chang, Ting-Chang
;
Tu, Chun-Hao
;
Chen, Wei-Ren
;
Hu, Chih-Wei
Mo nanocrystal memory was fabricated through annealing the oxygen-incorporated Mo and Si layers. We then investigated the influence an of ammonia plasma treatment on the nonvolatile memory characteristics of a charge storage layer composed of Mo nanocrystal memory embedded in SiO(x). Transmission electron microscopy revealed the nanostructure of the charge storage layer, and X-ray photoelectron spectra analyses revealed that nitrogen was incorporated into the charge storage layer. Electric analyses indicated that the memory window reduced, and both retention and endurance improved after the treatment. The reduction in the memory window was attributed to the decrease in charge trapping centers in the surrounding oxide after the treatment. The improvement of retention was interpreted in terms of the nitrogen passivation of traps in the oxide around the Mo nanocrystals. The robust endurance characteristic was attributed to the improvement of the quality of the surrounding oxide by nitrogen passivation.

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