Effect of Top Electrode Material on Resistive Switching Characteristics in MnO2 Nonvolatile Memory Devices

Abstract

The influence of top electrode material on the resistive switching properties of MnO2-based memory film using Pt as a bottom electrode was investigated in this study. In comparison with Pt/MnO2/Pt and Al/ MnO2/Pt devices, the Ti/ MnO2/Pt device exhibits resistive switching current-voltage (I-V) curve, which can be traced and reproduced more than 10(5) times only showing a little decrease of resistance ratio between high and low resistance states. Furthermore, transmission electron microscopy analyses are used to confirm the crystalline structure of MnO2 on Pt bottom electrode. Secondary ion mass spectrometry reveals a change of oxygen distribution in MnO2 thin film due to material characteristic of variant top electrodes. We suggest that the interface between MnO2 and electrodes play an important role on the resistive switching behaviors.