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Current status of resistive nonvolatile memories
(2008-12-01)
Lin, Chih-Yang
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Liu, Chih-Yi
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Lin, Chun-Chieh
;
Tseng, T. Y.
;
電子工程學系及電子研究所
Several emerging nonvolatile memories (NVMs) such as ferroelectric memory, magnetoresistive rams and ovonic universal memory are being developed for possible applications. Resistive random access memory (RRAM) is another interesting competitor in the class of NVMs. The RRAM is based on a large change in electrical resistance when the memory film is exposed to voltage or current pulses, and can keep high or low resistance states without any power. The ideal RRAM Should have the superior properties of reversible switching, long retention tune, multilevel switching, simple structure, small size, and low operating voltage. Perovskite oxides, transition metal oxides, and molecular materials were found to have resistive memory properties. This presentation reviews the ongoing research and development activities on future resistance NVMs technologies incorporating these new memory materials. The possible basic mechanisms for their bistable resistance switching are described. The effect of processing, composition, and structure on the properties of resistive memory materials and consequently the devices are discussed.
Three-Dimensional Reconstruction of Brain-wide Wiring Networks in Drosophila at Single-Cell Resolution
(2011-01-11)
Chiang, Ann-Shyn
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Lin, Chih-Yung
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Chuang, Chao-Chun
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Chang, Hsiu-Ming
;
Hsieh, Chang-Huain
Background: Animal behavior is governed by the activity of interconnected brain circuits. Comprehensive brain wiring maps are thus needed in order to formulate hypotheses about information flow and also to guide genetic manipulations aimed at understanding how genes and circuits orchestrate complex behaviors. Results: To assemble this map, we deconstructed the adult Drosophila brain into approximately 16,000. single neurons and reconstructed them into a common standardized framework to produce a virtual fly brain. We have constructed a mesoscopic map and found that it consists of 41 local processing units (LPUs), six hubs, and 58 tracts covering the whole Drosophila brain. Despite individual local variation, the architecture of the Drosophila brain shows invariance for both the aggregation of local neurons (LNs) within specific LPUs and for the connectivity of projection neurons (PNs) between the same set of LPUs. An open-access image database, named FlyCircuit, has been constructed for online data archiving, mining, analysis, and three-dimensional visualization of all single neurons, brain-wide LPUs, their wiring diagrams, and neural tracts. Conclusion: We found that the Drosophila brain is assembled from families of multiple LPUs and their interconnections. This provides an essential first step in the analysis of information processing within and between neurons in a complete brain.
Computer Aided Alignment and Quantitative 4D Structural Plasticity Analysis of Neurons
(2013-04-01)
Lee, Ping-Chang
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He, Hai-yan
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Lin, Chih-Yang
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Ching, Yu-Tai
;
Cline, Hollis T.
The rapid development of microscopic imaging techniques has greatly facilitated time-lapse imaging of neuronal morphology. However, analysis of structural dynamics in the vast amount of 4-Dimensional data generated by in vivo or ex vivo time-lapse imaging still relies heavily on manual comparison, which is not only laborious, but also introduces errors and discrepancies between individual researchers and greatly limits the research pace. Here we present a supervised 4D Structural Plasticity Analysis (4D SPA) computer method to align and match 3-Dimensional neuronal structures across different time points on a semi-automated basis. We demonstrate 2 applications of the method to analyze time-lapse data showing gross morphological changes in dendritic arbor morphology and to identify the distribution and types of branch dynamics seen in a series of time-lapse images. Analysis of the dynamic changes of neuronal structure can be done much faster and with greatly improved consistency and reliability with the 4D SPA supervised computer program. Users can format the neuronal reconstruction data to be used for this analysis. We provide file converters for Neurolucida and Imaris users. The program and user manual are publically accessible and operate through a graphical user interface on Windows and Mac OSX.
A study of grid artifacts formation and elimination in computed radiographic images
(2006-12-01)
Lin, Chih-Yang
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Lee, Wen-Jeng
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Chen, Shyh-Jye
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Tsai, Ching-Hwa
;
Lee, Jei-Han
Computed radiography (CR) has many advantages such as filmless operations, efficiency, and convenience. Furthermore, it is easier to integrate with the picture archiving and communication systems. Another important advantage is that CR images generally have a wider dynamic range than conventional screen film. Unfortunately, grid artifacts and moire pattern artifacts may be present in CR images. These artifacts become a more serious problem when viewing CR images on a computer monitor when a clinic grade monitor is not available. Images produced using a grid with higher frequency or a Potter-Bucky grid (i.e., a moving grid, Bucky for short) can reduce occurrence but cannot guarantee elimination of these artifacts [CR & PACS (2000); Detrick F (2001), pp 7-8]. In this paper, the formation of the artifacts is studied. We show that the grid artifacts occur in a narrow band of frequency in the frequency domain. The frequency can be determined, accurately located, and thus removed from the frequency domain. When comparing the results obtained from the proposed method against the results obtained using previous computer methods, we show that our method can achieve better image quality.
Bistable resistive switching in Al2O3 memory thin films
(2007)
Lin, Chih-Yang
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Wu, Chen-Yu
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Wu, Chung-Yi
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Hu, Chenming
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Tsenga, Tseung-Yuen
In this study, we investigate the resistive switching behavior of radio frequency (rf)-sputtered Al2O3 thin films. It is observed that both high-conducting state (ON state) and low-conducting state (OFF state) are stable and reproducible during successive resistive switchings by dc voltage sweeping. The ratio of resistance of the ON and OFF state is over 10(3). Such a reproducible resistive switching can be performed at 150 degrees C, and the resistance of the ON state can be altered by various current compliances. The conduction mechanisms of the ON and OFF states are demonstrated as ohmic conduction and Frenkel-Poole emission, respectively. Both states, performed by dc voltage sweeping and applying short pulse, are stable over 10(4) s at a read voltage of 0.3 V and the electrical-pulse-induced resistance change (EPIR) phenomenon is demonstrated, which are all important properties for further resistive random access memory application. (c) 2007 The Electrochemical Society.
Automatic method to compare the lanes in gel electrophoresis images
(2007-03-01)
Lin, Chih-Yang
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Ching, Yu-Tai
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Yang, Yun-Liang
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生物科技學系
;
資訊工程學系
Gel electrophoresis (GE) is an important tool in genomic analysis. GE results are presented using images. Each image contains several vertical lanes. Each lane consists of several horizontal bands. Two lanes are identical if the relative positions of the bands are the same. We present a computer method designed to compare the lanes and identify identical lanes. This method, developed using many image-processing techniques, is applied to segment the lanes and bands in GE images. The lanes are then converted into "position vectors" that describe the positions of the bands. Comparing lanes becomes equivalent to comparing the position vectors. This method can accurately identify identical lanes, helping biologists to identify the identical lanes from many lanes with much less effort.
Effect of top electrode material on resistive switching properties of ZrO2 film memory devices
(2007-05-01)
Lin, Chih-Yang
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Wu, Chen-Yu
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Wu, Chung-Yi
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Lee, Tzyh-Cheang
;
Yang, Fu-Liang
The influence of top electrode material on the resistive switching properties of ZrO2 -based memory film using Pt as a bottom electrode was investigated in this letter. In comparison with Pt/ZrO2/Pt and Al/ZrO2/Pt devices, the Ti/ZrO2/Pt device exhibits different resistive switching current-voltage (I-V) curve, which can be traced and reproduced by a dc voltage more than 1000 times only showing a little decrease of resistance ratio between high and low resistance states. Furthermore, the broad dispersions of resistive switching characteristics in the Pt/ZrO2/Pt and Al/ZrO2/Pt devices are generally observed during successive resistive switching, but those dispersions are suppressed by the device using Ti as a top electrode. The reliability results, such as cycling endurance and continuous readout test, are also presented. The write-read-erase-read operations can be over 104 cycles without degradation. No data loss is found upon successive readout after performing various endurance cycles.
SrTiO3-SiO2 oxide films for possible high-k gate dielectric applications
(2007-07-31)
Lin, Chun-Chieh
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Lai, Li-Wen
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Lin, Chih-Yang
;
Tseng, Tseung-Yuen
;
電子工程學系及電子研究所
Amorphous thin films of SrTiO3-SiO2 high-k dielectric oxides were deposited on p-Si substrate by sputtering from the targets made by SrTiO3 and SiO2 powder mixtures. The surface morphology, crystal structure, chemical bonding configuration, and depth profile of the composition were investigated by using scanning electron microscopy, glancing incident angle X-ray diffraction, X-ray photoelectron spectroscopy, and Auger electron spectroscopy, respectively. The capacitance-voltage (CV) and current-voltage characteristics were used for demonstrating their electrical properties. The SrTiO3-SiO2 thin films remained as amorphous structures when annealed up to 900 degrees C. The Pt/SrTiO3-SiO2/Si MOS structure 2 had a low leakage current density of similar to 2 x 10(-8) A/cm(2) measured at 100 kV/cm and dielectric constant of 24 for 700 degrees C-annealed film. The films annealed at 600 degrees C showed typical CV characteristics. However, the deformed CV curves were found for films annealed at 700 degrees C due to the diffusion of Ti species in the SrTiO3-SiO2 film into the Si substrate. (C) 2006 Elsevier B.V. All rights reserved.
Modified resistive switching behavior of ZrO2 memory films based on the interface layer formed by using Ti top electrode
(2007-11-01)
Lin, Chih-Yang
;
Wu, Chung-Yi
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Wu, Chen-Yu
;
Tseng, Tseung-Yuen
;
Hu, Chenming
The influence of Ti top electrode material on the resistive switching properties of ZrO2-based memory film using Pt as bottom electrode was investigated in the present study. When Ti is used as top electrode, the resistive switching behavior becomes dependent on bias polarity and no current compliance is needed during switching into high conducting state. This phenomenon is attributed to the fact that a series resistance between Ti and ZrO2 film, composed of a TiOx layer, a ZrOy layer, and even the contact resistance, imposed a current compliance on the memory device. Besides, our experimental results imply that switching the device into high conducting state is a field driven process while switching back into low conducting state is a current driven process. (c) 2007 American Institute of Physics.
Voltage-polarity-independent and high-speed resistive switching properties of v-doped SrZrO3 thin films
(2007-12-01)
Lin, Chun-Chieh
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Lin, Chih-Yang
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Lin, Meng-Han
;
Lin, Chen-Hsi
;
Tseng, Tseung-Yuen
In this paper, nonpolar resistive switching behavior is reported for the first time in a SZO-based memory device. The electrode materials used which have different conductivities affect the resistive switching properties of the device. The A1/V:SZO-LNO/Pt device shows nonpolar switching behavior, whereas the A1/V:SZO/LNO device has bipolar switching property. The resistance ratios of these two devices are quite distinct owing to the difference between the resistance of low resistance states. The A1/V:SZO-LNO/Pt device with lower resistive switching voltages (+/- 7 V turn on and 2 V turn off) and higher resistance ratio (10(7)) is more suitable for practical applications compared to the A1/V:SZO/LNO device. The switching speed of the A1/V:SZO-LNO/Pt device is 10 ns, which is the fastest speed that has ever been reported. The conduction mechanisms, nondestructive readout property, retention time, and endurance of this device are also reported in this paper.

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