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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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🏛️國立陽明交通大學機構典藏

Access type: Open accessAuthor: search.filters.author.SZE, SM

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Now showing 1 - 5 of 5
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    EFFECT OF GE CONCENTRATION ON STATIC AND MICROWAVE PERFORMANCES IN GEXSI1-X HETEROJUNCTION BIPOLAR-TRANSISTORS UNDER HIGH-LEVEL INJECTION
    (1994-04-01)
    CHYAN, YF
    ;
    SZE, SM
    ;
    CHANG, CY
    ;
    REIF, R
    ;
    電控工程研究所
    We report the theoretical investigation of the effect of Ge concentration on both static and high-frequency performances in polycrystalline silicon emitter GexSi1-x heterojunction bipolar transistors (HBTs). The calculation is carried out up to 0.95 V, before the onset of the Kirk effect [C. T. Kirk: IEEE Trans. Electron Devices ED-9 (1962) 164]. From this model, we find that the current gain, transconductance, cutoff frequency, and maximum oscillation frequency increase with increasing Ge concentration. In addition, the base transit time and the switching delay time in the emitter-coupled logic circuit slightly decrease as Ge content increases. Furthermore, it shows that the high-level injection eff ect becomes more pronounced in the GexSi1-x HBT as Ge concentration increases. Compared with the conventional low-level injection model, the improved model provides much more accurate expressions for electrical characteristics of GexSi1-x HBTs operating under high-level injection.
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    EFFECT OF INTERFACIAL OXIDE ON STATIC AND HIGH-FREQUENCY PERFORMANCE IN POLYEMITTER BIPOLAR-TRANSISTORS UNDER HIGH-LEVEL INJECTION
    (1994-05-01)
    CHYAN, YF
    ;
    SZE, SM
    ;
    CHANG, CY
    ;
    REIF, R
    ;
    電控工程研究所
    We report on a theoretical investigation of the eff ect of interfacial oxide on both static and dynamic performance in polycrystalline silicon emitter bipolar transistors. The calculation is carried out up to 0.9 V, before the onset of the Kirk eff ect. From the model, it is found that the current gain increases and the forward transit time decreases as interfacial oxide thickness increases. Furthermore, both the current gain and the forward transit time decrease as recombination velocity increases. In addition, the intrinsic base resistance remains almost constant as interfacial oxide thickness increases, and increases as recombination velocity increases. Compared with the conventional low-level injection model, the improved model provides much more accurate expressions for electrical characteristics of bipolar transistors operating under high-level injection.
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    TEMPERATURE INFLUENCE ON THE GENERALIZED EINSTEIN RELATION FOR DEGENERATE SEMICONDUCTORS WITH ARBITRARY BAND STRUCTURES
    (1994-05-01)
    CHYAN, YF
    ;
    SZE, SM
    ;
    CHANG, CY
    ;
    LIAO, K
    ;
    REIF, R
    We present a systematic study of the temperature influence on the generalized Einstein relation for degenerate semiconductors with different band structures. The conventional Einstein relation is still a good approximation at very high temperatures for most carrier concentrations but becomes invalid at low temperatures for highly degenerate semiconductors. As the temperature rises, higher energy bands with small minimum energy separations (e.g., from GAMMA band to L band) and large density-of-state effective masses will have a larger fraction of carriers, because the minimum energy separations become comparable to the thermal energy. Thus, from 500 K to 1200 K, in n-type GaAs and n-type Ge, we observe kinks in the D/mu versus carrier concentration curves. However, no such kinks are observed in n-type Si due to its large minimum energy separations. Similarly, p-type Ge and p-type GaAs show no kinks, because the energy of the spin-orbit splitting in these semiconductors is large compared to the thermal energy.
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    INFLUENCE OF METALORGANIC SOURCES ON THE COMPOSITION UNIFORMITY OF SELECTIVELY GROWN GAXIN1-XP
    (1994-09-01)
    CHAN, SH
    ;
    CHANG, CY
    ;
    SZE, SM
    ;
    交大名義發表
    ;
    電子工程學系及電子研究所
    In this work, selective epitaxial growth (SEG) of GaInP on a GaAs substrate patterned with silicon nitride is performed by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The group III sources employed are the combinations of triethylgallium and ethyldimethylindium (TEG+EDMI), triethylgallium and trimethylindium (TEG+TMI), and trimethylgallium and trimethylindium (TMG+TMI). Completely selective epitaxy can be achieved at a growth temperature of 675 degrees C and a growth pressure of 40 Torr when TEG+EDMI is used; while completely selective epitaxy can be achieved under the conditions of 650 degrees C and 40 Torr when the other two sources are used. For the three sources, GaP and InP incorporation increase near the edges of the patterns due to the extra flux of Ga-containing and In-containing species from the region of masking film. Different combinations of group III sources lead to different extents of these incorporations due to the decomposition and diffusion characteristics of the precursors.
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    SELECTIVE EPITAXIAL-GROWTH OF GAINP BY LOW-PRESSURE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION USING ETHYLDIMETHYLINDIUM AS IN-SOURCE
    (1994-10-24)
    CHAN, SH
    ;
    SZE, SM
    ;
    CHANG, CY
    ;
    LEE, WI
    ;
    電子物理學系
    We have demonstrated the feasibility of selective epitaxial growth (SEG) of GaInP using low-pressure metal-organic chemical-vapor deposition (LPMOCVD) with the combination of ethyldimethylindium (EDMIn) and triethylgallium (TEGa) as the group-III sources. Complete selective epitaxy can be achieved at a growth temperature of 675 degrees C and a growth pressure of 40 Torr. The deposition of Ga-rich polycrystalline GaInP on Si3N4 film occurs at lower temperatures. Although the incorporation efficiency of TEGa into GaInP is much lower than that of trimethylgallium, the combination of EDMIn and TEGa has been found to be a good candidate for SEG of GaInP. Low-temperature photoluminescence shows that the selectively grown epitaxial layer has good optical quality and is useful for light emitting device applications. (C) 1994 American Institute of Physics.