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Access type: Open accessSubject: search.filters.subject.Gilbert mixer

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Now showing 1 - 10 of 14
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    Broadband CMOS Gilbert Down-Converter Utilizing a Low-Loss Step-Impedance Rat-Race Coupler
    (2009)
    Wei, Hung-Ju
    ;
    Meng, Chinchun
    ;
    Yu, Sheng-Wen
    ;
    電信工程研究所
    ;
    Institute of Communications Engineering
    A Broadband Gilbert Down-Converter with step-impedance rat-race coupler is demonstrated using 0.13 mu m standard CMOS technology. The proposed method utilizes higher effective dielectric-constant, phase-inverter and step-impedance techniques simultaneously to make the rat-race coupler more compact (similar to 64% reduction) and phase-balanced over a wide operating bandwidth. The down-converter has NF of 16 dB and LO-to-RF isolation of better than 35 dB. The mixer core consumes 2.9 mA at V(dd)=1.8 V.
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    A high 2LO-to-RF isolation GaInP/GaAs HBT sub-harmonic Gilbert mixer using three-level topology
    (2006)
    Wu, Tzung-Han
    ;
    Meng, Chinchun
    ;
    Huang, Guo-Wei
    ;
    電信工程研究所
    ;
    Institute of Communications Engineering
    A 5.2 GHz three-level sub-harmonic downconversion Gilbert mixer using GaInP/GaAs HBT (Heterojunction Bipolar Transistor) technology is demonstrated in this paper. The LO frequency is half of the RF frequency for the three-level sub-harmonic mixer architecture; therefore, the RF frequency is 5.2004 GHz and LO frequency is 2.6 GHz. The conversion gain is 14.5 dB, IP(1dB') is -18 dBm, IIP(2) is 13 dBm and the IIP(3) is -5 dBm when the LO power equals to -8 dBm. The 2LO-to-RF leakage is about -83 dBm. The RF input return loss is better than -18 dB from DC to 6GHz.
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    Compact 5.2-GHz GaInP/GaAs HBT gilbert upconverter using lumped rat-race hybrid and current combiner
    (2005-10-01)
    Meng, CC
    ;
    Wu, TH
    ;
    Lin, MC
    ;
    電信工程研究所
    ;
    Institute of Communications Engineering
    A compact 5.2-GHz Gibert upconversion mixer is demonstrated using the 2-mu m GaInP/GaAs heterojunction bipolar transistor (HBT) technology. A miniature lumped-element rat-race hybrid and an LC current combiner are used in the LO port and the RF port of the upconversion Gilbert mixer, respectively. The effect of the LC current combiner with inductor loss is established in this letter. An active IF balun is incorporated in. the Gilbert upconverter with no extra power consumption. The fully integrated Gilbert upconverter has conversion gain of 1 dB, OP (1 dB) of -10 dBm, and OIP3 of 2 dBm when input IF = 300 MHz, LO = 4.9 GHz, and output RF = 5.2 GHz.
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    A 2.4, 5.2, and 5.7 GHz CMFB gilbert downconverter with low-voltage cascode current mirror input stage
    (2006-11-01)
    Tseng, Sheng-Che
    ;
    Meng, Chinchun
    ;
    Huang, Guo-Wei
    ;
    電信工程研究所
    ;
    Institute of Communications Engineering
    A triple-band (2.4, 5.2, and 5.7 GHz) CMFB downconversion micromixer with a low-voltage cascode current mirror RF input stage has been demonstrated by the 0.18-mu m CMOS technology in this letter. Micromixer has a single-ended RF input stage, the CMFB topology is adopted to improve the conversion gain, and a differential-to-single output buffer is used to convert the differential output of the mixer into a single-ended output. The fully integrated downconversion micromixer has the conversion gain of 12 dB, LO-to-IF isolation of 43 dB, LO-to-RF isolation of 48 dB, and RF-to-IF isolation of 18 dB at 2.4 GHz. The mixer has the conversion gain of 7.5 dB, LO-to-IF isolation of 54 dB, LO-to-RF isolation of 49.5 dB, and RF-to-IF isolation of 25 dB at 5.7 GHz. The total quiescent current consumption of the circuit is 7.6 mA. (c) 2006 Wiley Periodicals, Inc.
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    5.2/5.7-GHz 48-dB image rejection GaInP/GaAs HBT weaver down-converter using LO frequency quadrupler
    (2006-11-01)
    Wu, Tzung-Han
    ;
    Meng, Chinchun
    ;
    電信工程研究所
    ;
    Institute of Communications Engineering
    A GaInP/GaAs heterojunction bipolar transistor (HBT) down-converter using the Weaver architecture is demonstrated in this paper. The Weaver system is a double-conversion image rejection heterodyne, system which requires no bandpass filters in the signal path and no quadrature networks. The Weaver down-converter has the image rejection ratios of 48 dB and 44 dB when the RF frequency is 5.2 GHz and 5.7 GHz, respectively. A new frequency quadrupler is employed in the down-converter to generate the local oscillator (LO) signals. The frequency quadrupler is designed to minimize the phase error when generating LO signals and thus the image rejection performance is improved. A diagrammatic explanation using the complex mixing technique to analyze the image rejection mechanism of the Weaver architecture is developed in this paper. From our analysis, the image rejection can be further improved by making the LO1 and LO2 signals coherent.
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    5.2 Ghz high isolation sige BICMOS CMFB Gilbert mixer
    (2007-02-01)
    Meng, Chinchun
    ;
    Wu, Tzung-Han
    ;
    Wu, Tse-Hung
    ;
    Huang, Guo-Wei
    ;
    電信工程研究所
    Active PMOS loads with common mode feedback to stabilize the bias points are employed in the Gilbert mixer loads to increase the mixer gain. Good device matching and the deep trench isolation technique in the SiGe HBT technology can improve the port-to-port isolations. A 16 dB conversion gain, Ip(ldB) = -21 dBm and IIP3 = - 11 dBm using 0.35 mu m SiGe BiCMOS Gilbert downconversion micromixer is demonstrated when RF = 5.2 GHz and LO = 5.17 GHz with -66 dB LO-IF, -52 dB LO-RF, and -24 dB RF-IF isolations. (c) 2006 Wiley Periodicals, Inc.
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    GaInP/GaAs HBT sub-harmonic Gilbert mixers using stacked-LO and leveled-LO topologies
    (2007-05-01)
    Wu, Tzung-Han
    ;
    Tseng, Sheng-Che
    ;
    Meng, Chin-Chun
    ;
    Huang, Guo-Wei
    ;
    電信工程研究所
    This paper discusses and demonstrates the most popular sub-harmonic Gilbert mixers in 2-mu m GaInP/GaAs HBT technology. High two local oscillators (2LO)-to-RF isolation is important to alleviate the self-mixing problem of the sub-harmonic mixer. The demonstrated GaInP/GaAs HBT stacked-local oscillator (LO) mixer topology has achieved the best 2LO-to-RF isolation when compared with the previous literature. On the other hand, the leveled-LO sub-harmonic mixers have advantages in terms of the high speed and low dc supply voltage at the cost of much larger LO pumping power. Among all the structures, the bottom-LO sub-harmonic mixer has the lowest current consumption and the simplest circuit structure at the expense of the 2LO-to-RF isolation.
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    High-gain high-isolation CMFB stacked-LO subharmonic Gilbert mixer using SiGe BiCMOS technology
    (2007-05-01)
    Wu, T. H.
    ;
    Meng, C. C.
    ;
    Huang, G. W.
    ;
    電信工程研究所
    ;
    Institute of Communications Engineering
    A 5.2-GHz SiGe BiCMOS stacked-LO-stage CMFB (common made feedback) subharmonic mixer is demonstrated in this article. The stacked-LO-stage and the active loads are used to improve the 2LO-RF isolation and the conversion gain, respectively. The SiGe mixer includes five levels of transistors stacked together at the supply voltage of 3.3 V because of the low knee-voltage characteristic of the SiGe HBTs (heterojunction bipolar transistors). The mixer demonstrated achieves 23 dB conversion gain and -78 dB 2LO-RF isolation. (c) 2007 Wiley Periodicals, Inc.
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    2.4/5.7 GHz dual-band high linearity gilbert upconverter utilizing bias-offset TCA and LC current combiner
    (2007-12-01)
    Syu, Jin-Siang
    ;
    Meng, Chinchun
    ;
    電信工程研究所
    ;
    Institute of Communications Engineering
    A 2.4/5.7 GHz dual-band Gilbert upconversion mixer is demonstrated using 0.35 mu m SiGe BiCMOS technology. A bias-offset cross-coupled transconductance amplifier (TCA) is employed in the intermediate frequency port for the linearity improvement. The dual-band LC current combiner and the output shunt-shunt feedback buffer amplifier are in the radio frequency (RF) port. The mechanisms of the high linearity upconverter and, the design flow of the dual-band LC current combiner are established in this letter. The dual-band upconverter has conversion gain of 1.5/-0.2 dB, OP1dB of -10.5/-9 dBm, and OIP3 of 12/13 dBm for IF=100 MHz, RF= 2.4/5.7 GHz, respectively.
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    GaInP/GaAs HB broadband inductorless receiver
    (2008-01-01)
    Wu, Tzung-Han
    ;
    Meng, Chinchun
    ;
    Huang, Guo-Wei
    ;
    電信工程研究所
    ;
    Institute of Communications Engineering
    A GaInP/GaAs HBT broadband RF front-end consisting of a low-noise wideband amplifier and a micromixer is demonstrated in this article. The major advantage of this work is the elimination of inductors and thus the chip area can be greatly saved. The bandwidth of the RF front-end is up to 7 GHz. The measured conversion gain is higher than 25 dB from 1 to 7 GHz and the noise figure of the RF front-end is less than 8 dB within the bandwidth. (c) 2007 Wiley Periodicals, Inc.