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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作,涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.
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Item type:Item, High Performance Metal-Gate/High-kappa GaN MOSFET With Good Reliability for Both Logic and Power Applications(2016-09-01) ;Yi, Shih-Han ;Ruan, Dun-Bao ;Di, Shaoyan ;Liu, XiaoyanWu, Yung HsienThe gate-recessed GaN MOSFET on a Si substrate is demonstrated to achieve a record highest normalized transistor current (mu C-ox) of 335 mu A/V-2 (410 mA/mm at L-G = 5 mu m and only V-G = 4 V), I-ON/I-OFF of 9 orders of magnitude, small 79 mV/dec sub-threshold slope, a low oxide/GaN interface trap density of 1.2 x 10(10) eV(-1)/cm(2), a low on-resistance of 17.0 Omega-mm, a high breakdown voltage of 720-970 V, and excellent reliability of only 40 mV Delta V-T after 175 degrees C 1000 s stress at maximum drive current. Such excellent device integrities are due to the high-kappa gate dielectric and the high conduction band offset (Delta E-C) of SiO2/GaN. From the calculation results of self-consistent Schrodinger and Poisson equations, the good reliability of GaN MOSFET is related to the confined carrier density within the GaN channel, which is in sharp contrast to the strong wave-function penetration into the high-trap density AlGaN barrier in the AlGaN/GaN HEMT.Item type:Item, 金屬閘極/高介電係數材料互補式金氧半場效電晶體在45到22奈米世代之應用(III)(2010) ;荊鳳德 ;CHIN ALBERT國立交通大學電子工程學系及電子研究所Item type:Item, 蕭特基能障金氧半電晶體元件研製與理論分析---子計畫II:蕭特基能障SOI金氧半電晶體元件研製與分析(2001) ;黃調元 ;TIAO-YUANHUANG國立交通大學電子工程學系Item type:Item, 高介電閘氧化層深次微米MOS元件電漿製程傷害可靠性之研究(2001) ;莊紹勳 ;Chung Steve S國立交通大學電子工程學系Item type:Item, 肖基障金氧半場效体之數值模擬(2001) ;郭雙發國立交通大學電子工程學系Item type:Item, 矽鍺源/汲極金氧半電晶體及電感在射頻應用之研究(III)(2001) ;張俊彥 ;CHANG CHUN-YEN國立交通大學電子工程研究所Item type:Item, BESOI的新製程(1999) ;荊鳳德 ;CHIN ALBERT交通大學電子工程系Item type:Item, 極大型積體電路之深次微米元件及多層連線分析及模擬的研究(II)(1999) ;吳慶源交通大學電子工程系Item type:Item, 薄閘氧化層深次微米n-MOS元件的熱載子可靠性分析(1999) ;莊紹勳 ;Chung Steve S交通大學電子工程系Item type:Item, 深次微米元件內熱載子效應所造成汲極漏電流特性退化之研究(1999) ;汪大暉 ;WANG TAHUI交通大學電子工程系