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Low threshold current, low resistance 1.3 mu m InAs-InGaAs quantum-dot VCSELs with fully doped DBRs grown by MBE
(2007-01-01)
Yu, Hsin-Chieh
;
Wang, Jyh-Shyang
;
Su, Yan-Kuin
;
Chang, Shoou-Jinn
;
Kuo, Hao-Chung
The processing technology of 1.3 mu m InAs-InGaAs quantum-dot VCSELs with fully doped DBRs grown by MBE will be demonstrated. The threshold currents of the fabricated devices with 10 mu m oxide-confined aperture are 0.7mA, which correspond to 890A/cm(2) threshold current density. And the threshold voltage of the device is 1.03V and maximum output power is 33 M. The series resistance is 85 Omega which is 10 times lower then our preliminary work and 3 times lower then intracavity contacted InAs-InGaAs quantum-dot VCSEL. This relatively lower resistance can even comparable with the best result reported in InGaAs oxide-confined VCSELs with intracavity contact.
質子佈植應用於長波長1.3.mu.mVCSEL之研製
(2003)
王興宗
;
S.C.Wang
;
國立交通大學光電工程研究所
近年來，氮摻雜之砷化鎵銦(N-InGaAs)已經成為一個熱門的研究材料，尤其是應用在長波長面射型雷射(VCSEL)元件上。因為N-InGaAs材料與砷化鎵(GaAs)半導體材料的晶格常數匹配，故可以在砷化鎵基板上配合AlGaAs/GaAs 之高反射鏡面直接磊晶出光電特性佳、製程簡單及低成本的長波長面射型雷射。由於長波長面射型雷射的發散角小、波長可調、低臨界電流、操作頻率快、整合性高及製作成本低，將成為下一代光電通訊系統主要的訊號源。本計畫，擬開發出質子佈植型長波長面射型雷射。
A simple model for cavity enhanced slow lights in vertical cavity surface emission lasers
(2008-04-01)
Chou, Chia-Sheng
;
Lee, Ray-Kuang
;
Peng, Peng-Chun
;
Kuo, Hao-Chung
;
Lin, Gray
We develop a simple model for the slow lights in vertical cavity surface emission lasers (VCSELs), with the combination of cavity and population pulsation effects. The dependences of probe signal power, injection bias current and wavelength detuning for the group delays are demonstrated numerically and experimentally. Up to 65 ps group delays and up to 10 GHz modulation frequency can be achieved at room temperature at a wavelength of 1.3 mu m. The most significant feature of our VCSEL device is that the thickness of the active region is only several micrometers long. Based on the experimental parameters of quantum dot VCSEL structures, we show that the resonance effect of the laser cavity plays a significant role in enhancing the group delays.
Mode control of vertical-cavity surface-emitting lasers by germanium coating
(2001-02-01)
Chiou, SW
;
Lin, G
;
Lee, CP
;
Yang, HP
;
Sung, CP
We have successfully developed a selective surface coating technique to control the modal behavior of the ion-implanted vertical-cavity surface-emitting laser (VCSEL). With selective deposition of a germanium coating by the lift-off process, we could spatially control the threshold gain condition of the VCSEL to support the single transverse mode. The threshold current is 7 mA and single transverse mode operation is maintained up to I mW. The method is simple and nondestructive compared with other techniques.
Performance of 850 nm AlGaAs/GaAs implanted VCSELs utilizing silicon implantation induced disordering
(2003-10-01)
Lai, FI
;
Hsueh, TH
;
Chang, YH
;
Shu, WC
;
Lai, LH
In this paper, we report a novel implanted vertical surface emitting lasers (VCSELs) utilizing silicon implantation induced disordering. The VCSELs exhibit kink-free current-light Output performance with threshold currents similar to2.4 mA, and the slope efficiencies similar to0.45 W/A. The threshold current change with temperature is minimal and the slope efficiency drops less than similar to30% when the substrate temperature is raised to 90 degreesC. The eye diagram of VCSEL operating at 2.125 Gb/s with 7 mA bias and 10 dB extinction ratio shows very clean eye with jitter less than 30 ps. We have accumulated life test data up to 5000 It at 100 degreesC/20 mA with exceptional reliability and the WHTOL (high temperature and high humidity 85 degreesC/85 operating lifetime) biased at 8 mA has passed over 2000 h. (C) 2003 Elsevier Ltd. All rights reserved.
High reflectivity distributed Bragg reflectors for 1.55 mu m VCSELs using InP/airgap
(2003-10-01)
Tsai, JY
;
Lu, TC
;
Wang, SC
;
光電工程學系
;
Department of Photonics
A high reflecting InP/airgap distributed Bragg reflector (DBR) using InGaAs as sacrificial layers is demonstrated. The 3-pair InP/airgap DBR is formed by etching the InGaAs layers of the MOCVD grown InP/InGaAs structure using H2SO4 solution. A rigid and stable InP/airgap DBR with a peak reflectivity of 99.9% at 1.54 mum and a stopband width of about 200 nm is achieved. (C) 2003 Elsevier Ltd. All rights reserved.
High speed performance of 850 nm silicon-implanted AlGaAs/GaAs vertical cavity emitting lasers
(2004-03-01)
Kuo, HC
;
Chang, YS
;
Lai, FY
;
Hseuh, TH
;
Chu, LT
In this paper, we report a high speed performance of silicon-implanted vertical surface emitting lasers (VCSELs) with the aperture size 6x6 mum(2). These VCSELs exhibit kink-free current-light output with threshold currents similar to1.14 mA, and the slope efficiencies similar to0.5 W/A. The eye diagram of VCSEL operating at 10 Gb/s with 6 mA bias and 6 dB extinction ratio shows very clean eye. The rise time is 29 ps and fall time is 41 ps with jitter (p-p) = 21 ps. We have accumulated life test data up to 1000 h at 70 degreesC/10 mA. (C) 2003 Elsevier Ltd. All rights reserved.
Improvement of high-speed oxide-confined vertical-cavity surface-emitting lasers
(2004-04-01)
Yu, HC
;
Chang, SJ
;
Su, YK
;
Sung, CP
;
Yang, HP
High-speed vertical-cavity surface-emitting lasers that could be modulated up to 10 Giga-bit-per-second (Gbps) were accomplished by using additional proton implantation to reduce the parasitic capacitance. The eye diagram of the implanted device shows a noticeable improvement when compared with those devices without implantation. In contrast to previous reports, moreover, the output power-current-voltage (L-I-V) characteristics of the fabricated devices ill this study show excellent consistency between before and after implantation. The high-temperature lifetime of devices fabricated with a similar process has already exceeded 8100 h up to the present day.
Improvement of kink characteristics performance of GaAsVCSEL with a indium-tin-oxide top transparent overcoating
(2004-11-15)
Lai, F
;
Chang, YH
;
Hsueh, TH
;
Huang, HW
;
Laih, LH
We demonstrated the enhancement in the performance of proton-implanted GaAs VCSEL by incorporation of a new p-contact scheme using a Ti and ITO transparent overcoating on the regular p-contact. The kink characteristics in light output power versus current (L-I) curve of the VCSEL with the Ti/ITO overcoating were improved with a reduction in the derivative kink factor of as large as 70%. The high-speed response of the overcoated device also shows a more open clear eye and lower jitter of 35 ps operating at 2.125 Gb/s under 10 mA bias and 9 dB extinction ratio compared to the no overcoated device. Better current spreading and uniformity induced by the overcoating could be responsible for these performance improvements. (C) 2004 Elsevier B.V. All rights reserved.
Design and fabrication of a InGaN vertical-cavity surface-emitting laser with a composition-graded electron-blocking layer
(2014-08-01)
Lin, B. C.
;
Chang, Y. A.
;
Chen, K. J.
;
Chiu, C. H.
;
Li, Z. Y.
In this study, the design and fabrication of a InGaN vertical-cavity surface-emitting laser (VCSEL) with a composition-graded electron blocking layer (GEBL) are revealed experimentally and theoretically. It has been demonstrated that laser output performance is improved by using a GEBL when compared to the typical VCSEL structure of a rectangular EBL. The output power obtained at 20 kA cm(-2) is enhanced by a factor of 3.8 by the successful reduction of threshold current density from 12.6 to 9.2 kA cm(-2) and the enlarged slope efficiency. Numerical simulation results also suggest that the improved laser output performances are due mainly to the reduction of electron leakage current and the enhanced hole injection efficiency in the multiple-quantum-well (MQW) active region.

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