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A broadband and scalable model for on-chip inductors incorporating substrate and conductor loss effects
(2006-03-01)
Guo, JC
;
Tan, TY
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
A new T-model has been developed to accurately simulate the broadband characteristics of on-Si-chip spiral inductors, up to 20 GHz. The spiral coil and substrate RLC networks built in the model play a key role responsible for conductor loss and substrate loss in the wideband regime, which cannot be accurately described by the conventional pi-model. Good match with the measured S-parameters, L (omega), Re (Z(in), (omega)), and Q (omega) proves the proposed T-model. Besides the broadband feature, scalability has been justified by good match with a linear function of coil numbers for all model parameters employed in the RLC networks. The satisfactory scalability manifest themselves physical parameters rather than curve fitting. A parameter extraction flow is established through equivalent circuit analysis to enable automatic parameter extraction and optimization. This scalable inductor model will facilitate optimization design of on-chip inductor and the accuracy proven up to 20 GHz can improve RF circuit simulation accuracy demanded by broadband design.
Low-K/Cu CMOS-based SoC technology with 115-GHz f(T), 100-GHz f(max), noise 80-nm RF CMOS, high-Q MiM capacitor, and spiral Cu inductor
(2006-08-01)
Guo, Jyh-Chyurn
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Logic CMOS-based RF technology is introduced for a 10-Gb transceiver in which active and passive RF devices have been realized in a single chip. RF nMOS of 115-GHz f(T), 100-GHz f(max), and sub-1.0-dB NFmin at 10 GHz have been fabricated by aggressive device scaling and layout optimization. High-Q MiM capacitor and spiral Cu inductors have been successfully implemented in the same chip by 0.13-mu m low-K/Cu back end of integration line technology. Core 1.0 V MOS and/or junction varactors for VCO at 10 GHz are offerings free of extra cost and realized by the elaborated layout.
A broadband and scalable lumped element model for fully symmetric inductors under single-ended and differentially driven operations
(2007-08-01)
Guo, Jyh-Chyurn
;
Tan, Teng-Yang
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
A broadband and scalable 2-T model is developed to accurately simulate fully symmetric inductors with various dimensions. The 2-T model is defined to reflect the structure of an equivalent circuit with two identical T-model circuits. Two-step de-embedding is assisted by open and through pads for extraction of intrinsic characteristics. The accuracy is validated by 3-D fullwave electromagnetic simulation. A novel parameter extraction flow is established, and a single set of model parameters is derived to be valid for both single-ended and differentially driven topologies. The broadband accuracy is proven by a good match with S-parameters, L(omega), Re(Z(in)(omega)),and Q(omega) over frequencies up to 20 GHz. The scalability is justified by good fitting with either a linear or a parabolic function of spiral coil radii. Furthermore, all model parameters are frequency independent so as to ensure computation efficiency. This 2-T model consistently predicts the enhancement of Q(max) by 20%-30% for the symmetric inductors under a differential excitation. The Q improvement is even better than 100% over broader frequencies beyond f(m)(Q(max)).
Characterization of inductor with Ni-Zn-Cu ferrite embedded in B2O3-SiO2 glass
(2007-09-01)
Jao, Jui-Chu
;
Li, Pang
;
Wang, Sea-Fue
;
材料科學與工程學系
;
Department of Materials Science and Engineering
In this study, inductors using a new low-temperature cofirable ceramic (LTCC) design, in which Ni-Zn-Cu ferrite was buried in B2O3-SiO2 glass within the core of the spiral silver coil, were fabricated. The inductance and quality factor of the inductor with embedded ferrite are larger than those of pure B2O3-SiO2 glass. Ni-Zn-Cu ferrite was incompatible with the B2O3-SiO2 glass during the cofiring process due to sintering shrinkage mismatch. The incompatibility was resolved when 35 wt % Al2O3 was doped into the B2O3-SiO2 glass, which produces a glass-ceramic, and 2 wt % of Bi2O3 was fluxed into the Ni-Zn-Cu ferrite as a sintering aid. The addition of 2 wt % of Bi2O3 not only enhances densification, but also increases the permeability of Ni-Zn-Cu ferrite.
A broadband and scalable on-chip inductor model appropriate for operation modes of varying substrate resistivities
(2007-11-01)
Guo, Jyh-Chyurn
;
Tan, Teng-Yang
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
A broadband and scalable model is developed to accurately simulate on-chip inductors with various dimensions and substrate resistivities. The broadband accuracy is proven over frequencies of up to 20 GHz, even beyond resonance. A new scheme of resistance-inductance-capacitance networks is deployed for the spiral coils and substrate to account for 3-D eddy current, substrate return path, and spiral coil to substrate coupling effects. The 3-D eddy current is identified as the key element essential to accurately simulate the broadband characteristics. Electromagnetic simulation using the Advanced Design System momentum is conducted to predict the on-chip inductor performance corresponding to a wide range of substrate resistivities (rho(Si) = 0.05 - 1 k ohm center dot cm). Three operation modes such as transverse electromagnetic mode, slow-wave mode, and eddy current mode are reproduced. The model parameters manifest themselves as physics-based through relevant correlation with psi over three operation modes. The onset of slow-wave mode can be consistently explained by a key element R-p introduced in our model, which accounts for the conductor loss due to an eddy current arising from magnetic field coupling through a substrate return path. This broadband and scalable model is useful for radio frequency circuit simulation. In addition, it can facilitate an optimum design of on-chip inductors through the physics-based model parameters relevant to varying substrate resistivities.
A novel electrically tunable RF inductor with ultra-low power consumption
(2008-04-01)
Cho, Ming-Hsiang
;
Wu, Lin-Kun
;
電信工程研究所
;
Institute of Communications Engineering
In this study, we propose for the first time an electrically and continuously tunable RF inductor using grounded metal oxide semiconductor (MOS) transistor as a control device. By adjusting the output resistance of the grounded MOSFET, the ground-return current can lead to a significant variation in series inductance. This proposed inductor structure was implemented in a standard CMOS process and characterized up to 30 GHz, which demonstrates maximum inductance variations of 32% and 58% at 5.8 and 18 GHz, respectively. The dc power consumption of the proposed design is kept within 50 mu W over the entire tuning range.
A simple analytical model to accurately predict self-resonance frequencies of on-silicon-chip inductors in TEM mode and eddy current mode
(2008-08-01)
Guo, Jyh-Chyurn
;
Tan, Teng-Yang
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
For the first time, a simple analytical model in the form of explicit formulas was derived for on-silicon-chip inductors. This analytical model can accurately calculate self-resonance frequencies (f(SR)) in TEM mode and eddy current mode corresponding to very high and very low substrate resistivities (rho(Si)). Furthermore, this derived model can predict and explain the interesting result that f(SR) keeps nearly a constant independent of rho(Si) in TEM and eddy current modes but is critically determined by the inductance and parasitic capacitances. The simple model is useful in on-silicon-chip inductor design for increasing f(SR) under specified inductance target for broadband RF circuit design and applications. (C) 2008 Elsevier Ltd. All rights reserved.
High-performance radio frequency passive devices on plastic substrates for radio frequency integrated circuit application
(2007-04-01)
Hung, Bing-Fang
;
Chen, Chia-Chung
;
Kao, Hsuan-Ling
;
Chin, Albert
;
電子工程學系及電子研究所
High-performance passive RF devices were fabricated on insulating plastic substrates. These passive devices included inductors, low-loss coplanar waveguide (CPW) and microstrip transmission lines, 30 GHz narrow-band filters, and 25 GHz CPW ring resonators. The characteristics of these devices agreed well with those of ideal devices, as predicted by electromagnetic simulations.

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