<link rel="stylesheet" href="styles.cf390c6bfbe7555f.css">

學術出版;;Publications

Permanent URI for this communityhdl:11536/1

收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

Browse

Filters

2004 - 200972010 - 20141

Settings

🏛️國立陽明交通大學機構典藏

Access type: Open accessSubject: search.filters.subject.linearity

Search Results

Now showing 1 - 8 of 8
  • Thumbnail Image
    Item type:Item,
    Hot-carrier effects on power characteristics of SiGeHBTs
    (2004-06-01)
    Huang, SY
    ;
    Chen, KM
    ;
    Huang, GW
    ;
    Tseng, HC
    ;
    Hsu, TL
    This letter investigates hot-carrier (HQ effects on the power characteristics of Si-SiGe HBTs using load-pull measurements. We found that the output power, power gain, and linearity of Si-SiGe HBTs are degraded after HC stress. Under constant base-current measurement, the HC-induced power performance degradation is found to be much worse than that under constant collector-current measurement. The HC effects on the cutoff frequency, nonlinearity terms of base-current and collector-current, and third-order intermodulation (IM3) cancellation effect have been analyzed to explain the experimental observations.
  • Thumbnail Image
    Item type:Item,
    Comparative DC Characteristic Analysis of AlGaN/GaN HEMTs Grown on Si(111) and Sapphire Substrates by MBE
    (2014-04-01)
    Mukhopadhyay, Partha
    ;
    Bag, Ankush
    ;
    Gomes, Umesh
    ;
    Banerjee, Utsav
    ;
    Ghosh, Saptarsi
    A comparative assessment of AlGaN/GaN high-electron-mobility transistors (HEMTs) grown by molecular beam epitaxy on silicon and sapphire substrates has been carried out. Large-area power GaN HEMTs with identical device dimensions were fabricated on both substrates. A thicker AlN buffer layer was used for the GaN HEMT on silicon to achieve similar quality and uniformity of GaN epitaxy for rational comparison with that grown on sapphire. Direct-current analysis and physical characterization were carried out to understand the performance of the devices. Mathematical measurement of the instability of the current-voltage (I-V) characteristic at high applied drain bias was carried out to evaluate the performance of both devices. An improved two-dimensional (2D) analysis of the I-V characteristic was performed from a thermal perspective including appropriate scattering effects on the 2D electron gas mobility. The experimental and analytical studies were correlated to reveal the effects of temperature-sensitive scattering phenomena on the mobility as well as on the I-V characteristic at high drain bias in terms of lattice thermal heating. It is observed that the HEMT on Si has improved stability compared with sapphire due to its weaker scattering phenomena at high drain bias, associated with its thermal conductivity. Simulation of 2D thermal mapping was also carried out to distinguish the hot-spot regions of the devices. The comparable electrical performance of these devices illustrates the viability of AlGaN/GaN HEMTs on Si(111) to achieve low-cost stable devices with better thermal power handling for high-voltage applications.
  • Thumbnail Image
    Item type:Item,
    Linearity improvement for power MESFET devices using source inductive feedback and input impedance mismatch
    (2005)
    Meng, CC
    ;
    Wang, W
    ;
    電信工程研究所
    ;
    Institute of Communications Engineering
    Linearity can be improved drastically by sacrificing power gain with the same output power. GaAs MESFET devices with source-via-hole ground and with source-bond-wire ground are used to investigate the effect of source inductive feedback and input impedance mismatch on the effect of linearity. The output matching for all the devices are tuned for the maximum power condition. At 2.4 GHz, the device without source-bond-wire ground and input impedance mismatched has the highest linearity, OIP3=50 dBm, gain=13.5 dB gain and P-1dB=29 dBm while the device with source-via-hole ground and input impedance matched has the lowest linearity OIP3=40 dBm, 18.3 dB gain and P-IdB=29 dBm.
  • Thumbnail Image
    Item type:Item,
    Hot-carrier induced degradations on RF power characteristics of SiGe heterojunction bipolar transistors
    (2005-06-01)
    Huang, SY
    ;
    Chen, KM
    ;
    Huang, GW
    ;
    Liang, V
    ;
    Tseng, HC
    Hot-carrier (HC) effects on high-frequency and RF power characteristics of Si/SiGe HBTs are investigated in this paper. By using the two-tone load-pull measurement, we find that not only the cutoff frequency, but also the output power performances of Si/SiGe HBTs are suffered by the HC stress. In this work, S-parameters and intrinsic elements of an equivalent hybrid-pi model were used to validate the HC effects on high-frequency characteristics. With different bias conditions, the degradations of cutoff frequency, power gain, and linearity are found to be worse under constant base-current measurement than that under constant collector-current measurement. The HC-induced degradations on the current gain, transconductance, and ideality-factor of base and collector currents are analyzed to explain the experimental observations.
  • Thumbnail Image
    Item type:Item,
    Linearity and power characteristics of SiGeHBTs at high temperatures for RF applications
    (2005-07-01)
    Chen, KM
    ;
    Peng, AS
    ;
    Huang, GW
    ;
    Chen, HY
    ;
    Huang, SY
    In this paper, the power gain, power-added efficiency (PAE) and linearity of power SiGe heterojunction-bipolar transistors at various temperatures have been presented. The power characteristics were measured using a two-tone load-pull system. For transistors biased with fixed base voltage, the small-signal power gain and PAE of the devices increase with increasing temperature at low base voltages, while they decrease at high base voltages. Besides, the linearity is improved at high temperature for all voltage biases. However, for devices with fixed collector current, the small-signal power gain, PAE, and linearity are nearly unchanged with temperature. The temperature dependence of power and linearity characteristics can be understood by analyzing the cutoff frequency, the collector current, Kirk effect and nonlinearities of transconductance at different temperatures.
  • Thumbnail Image
    Item type:Item,
    High-linear-power MESFET devices using source-degeneration inductance and input-impedance mismatch
    (2006-05-01)
    Meng, CC
    ;
    Wang, W
    ;
    電信工程研究所
    ;
    Institute of Communications Engineering
    Linearity can be improved drastically by sacrificing power gain with the same output power. GaAs MESFET devices with via-hole ground and with bond-wire ground are used to investigate the effect of source-inductive feedback and input-impedance mismatch on the effect of linearm. At 2.4 GHz the device without bond-wire ground and mismatched input impedance has the highest linearity OIP3 = 50 dBm, gain = 13.5 dB gain, and P-tdB = 29 dBm, while the device with via-hole ground and inatched input impedance has the lowest linearity OIP3 = 40 dBm, 18.3 dB gain, and P-tdB = 29 dBm. (c) 2006 Wiley Periodicals, Inc.
  • Thumbnail Image
    Item type:Item,
    Device linearity comparison of uniformly doped and delta-doped In0.52Al0.48As/In0.6Ga0.4As metamorphic HEMTs
    (2006-07-01)
    Lin, YC
    ;
    Chang, EY
    ;
    Yamaguchi, H
    ;
    Hirayama, Y
    ;
    Chang, XY
    The uniformly doped and the delta-doped In0.52Al0.48As/In0.6Ga0.4As metamorphic high-electron mobility transistors (MHEMTs) were fabricated, and the dc characteristics and the third-order intercept point (IP3) of these devices were measured and compared. Due to more uniform electron distribution in the quantum-well region, the uniformly doped MHEMT exhibits a flatter transconductance (G(m)) versus drain-to-source current (I-DS) curve and much better linearity with higher IP3 and higher IP3-to-P-dc. ratio as compared to the delta-doped MHEMT, even though the delta-doped device exhibits higher peak transconductance. As a result, the uniformly doped MHEMT is more suitable for communication systems that require high linearity operation.
  • Thumbnail Image
    Item type:Item,
    A Comprehensive Investigation of Analog Performance for Uniaxial Strained PMOSFETs
    (2009-02-01)
    Kuo, Jack Jyun-Yan
    ;
    Chen, William Po-Nien
    ;
    Su, Pin
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    This paper presents a comprehensive investigation of the analog performance for uniaxial strained PMOSFETs with sub-100 nm gate length. Through a comparison between co-processed strained and unstrained devices regarding important analog metrics such as transconductance to drain current ratio (g(m)/I(d)), dc gain, linearity, low-frequency noise, and device mismatch, the impact of process-induced uniaxial strain on the analog performance of MOS devices has been assessed and analyzed. Our results indicate that, although the drain current noise spectral density and drain current mismatch of the strained device under low gate voltage overdrive are increased because of the larger gate-bias sensitivity of carrier mobility, the strained device has almost the same low frequency and mismatch performance as the unstrained one at a given g(m)/I(d). This paper may provide insights for analog design using advanced strained devices.