High-linear-power MESFET devices using source-degeneration inductance and input-impedance mismatch

Abstract

Linearity can be improved drastically by sacrificing power gain with the same output power. GaAs MESFET devices with via-hole ground and with bond-wire ground are used to investigate the effect of source-inductive feedback and input-impedance mismatch on the effect of linearm. At 2.4 GHz the device without bond-wire ground and mismatched input impedance has the highest linearity OIP3 = 50 dBm, gain = 13.5 dB gain, and P-tdB = 29 dBm, while the device with via-hole ground and inatched input impedance has the lowest linearity OIP3 = 40 dBm, 18.3 dB gain, and P-tdB = 29 dBm. (c) 2006 Wiley Periodicals, Inc.