High-linear-power MESFET devices using source-degeneration inductance and input-impedance mismatch
| dc.citation.epage | 954 | en_US |
| dc.citation.issue | 5 | en_US |
| dc.citation.spage | 953 | en_US |
| dc.citation.volume | 48 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | Meng, CC | en_US |
| dc.contributor.author | Wang, W | en_US |
| dc.contributor.department | 電信工程研究所 | zh_TW |
| dc.contributor.department | Institute of Communications Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:16:39Z | |
| dc.date.available | 2014-12-08T15:16:39Z | |
| dc.date.issued | 2006-05-01 | en_US |
| dc.description.abstract | Linearity can be improved drastically by sacrificing power gain with the same output power. GaAs MESFET devices with via-hole ground and with bond-wire ground are used to investigate the effect of source-inductive feedback and input-impedance mismatch on the effect of linearm. At 2.4 GHz the device without bond-wire ground and mismatched input impedance has the highest linearity OIP3 = 50 dBm, gain = 13.5 dB gain, and P-tdB = 29 dBm, while the device with via-hole ground and inatched input impedance has the lowest linearity OIP3 = 40 dBm, 18.3 dB gain, and P-tdB = 29 dBm. (c) 2006 Wiley Periodicals, Inc. | en_US |
| dc.identifier.doi | 10.1002/mop.21530 | en_US |
| dc.identifier.issn | 0895-2477 | en_US |
| dc.identifier.journal | MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1002/mop.21530 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/12284 | |
| dc.identifier.wosnumber | WOS:000236809800042 | |
| dc.language.iso | en_US | en_US |
| dc.subject | power amplifier | en_US |
| dc.subject | MESFET | en_US |
| dc.subject | linearity | en_US |
| dc.subject | GaAs | en_US |
| dc.subject | intermodulation | en_US |
| dc.title | High-linear-power MESFET devices using source-degeneration inductance and input-impedance mismatch | en_US |
| dc.type | Article | en_US |