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Now showing 1 - 10 of 10
  • Item type:Item,
    A GaInP/GaAs HBT micromixer for 2.4/5.2/5.7-Ghz multiband WLAN applications
    (2004-10-05)
    Wang, CY
    ;
    Lu, SS
    ;
    Meng, CC
    ;
    Lin, YS
    ;
    電信工程研究所
    A GaInP/GaAs HBT micromixer for 2.4/5.2/5.7-GHz multiband WLAN applications is demonstrated. Our experimental results show that the input return loss |S-11| is below -25 dB from DC to 10 GHz with power-conversion gains of 11.7, 11.9, and 11.5 dB at frequencies of 2.4, 5.2, and 5.7 GHz, respectively. The wideband matching characteristic makes the micromixer very suitable for multiband applications. Input P-IdB is -4 dBm and IIP3 is 2.36 dBm. Port-to-port isolation is also quite satisfactory. In addition, the single-to-differential input stage in the Gilbert micromixer eliminates the need for common-mode rejection. (C) 2004 Wiley Periodicals, Inc.
  • Item type:Item,
    Broadband Gilbert micromixer with an LO Marchand balun and a TIA output buffer
    (2006)
    Tseng, Sheng-Che
    ;
    Meng, Chinchun
    ;
    Chang, Chia-Hung
    ;
    Wu, Chih-Kai
    ;
    Hung, Guo-Wei
    A single-ended wideband downeonversion Gilbert micromixer is demonstrated in this paper using 0.35-um SiGe BiCMOS technology. Because of the wideband matching property of the micromixer, it can perform broad frequency translation. The TIA is utilized in the IF stage while a broadband Marchand balun is employed not only to generate differential LO signals but also to reserve the wideband operation of the mixer. This singleended wideband mixer has the conversion gain of 15 dB, IP(1dB) of 17 dBm, and IIP(3) of -6.5 dBm and works from 3.5 to 14.5 GHz. The input return loss is below -14 dB and the chip size is 1x1 mm(2).
  • Item type:Item,
    A 2.4, 5.2, and 5.7 GHz CMFB gilbert downconverter with low-voltage cascode current mirror input stage
    (2006-11-01)
    Tseng, Sheng-Che
    ;
    Meng, Chinchun
    ;
    Huang, Guo-Wei
    ;
    電信工程研究所
    ;
    Institute of Communications Engineering
    A triple-band (2.4, 5.2, and 5.7 GHz) CMFB downconversion micromixer with a low-voltage cascode current mirror RF input stage has been demonstrated by the 0.18-mu m CMOS technology in this letter. Micromixer has a single-ended RF input stage, the CMFB topology is adopted to improve the conversion gain, and a differential-to-single output buffer is used to convert the differential output of the mixer into a single-ended output. The fully integrated downconversion micromixer has the conversion gain of 12 dB, LO-to-IF isolation of 43 dB, LO-to-RF isolation of 48 dB, and RF-to-IF isolation of 18 dB at 2.4 GHz. The mixer has the conversion gain of 7.5 dB, LO-to-IF isolation of 54 dB, LO-to-RF isolation of 49.5 dB, and RF-to-IF isolation of 25 dB at 5.7 GHz. The total quiescent current consumption of the circuit is 7.6 mA. (c) 2006 Wiley Periodicals, Inc.
  • Item type:Item,
    Monolithic broadband Gilbert micromixer with an integrated Marchand balun using standard silicon IC process
    (2006-12-01)
    Tseng, Sheng-Che
    ;
    Meng, Chinchun
    ;
    Chang, Chia-Hung
    ;
    Wu, Chih-Kai
    ;
    Huang, Guo-Wei
    A single-ended wideband downconversion Gilbert micromixer is demonstrated in this paper using 0.35-mu m SiGe BiCMOS technology. A transimpedance amplifier with resistive feedback is utilized in the IF stage while a broadband Marchand balun is employed to generate wideband differential local oscillator signals. The planar Marchand balun topology employed in this paper can generate truly balanced signals even in the presence of the lossy low-resistivity (similar to 10 Omega (.) cm) silicon substrate. A systematic approach to measure the frequency response of each individual stage in a Gilbert mixer is developed in this paper. This single-ended wideband mixer has the conversion gain of 15 dB, IP1dB of -19 dBm, IIP3 of -7 dBm, and the noise figure of 13 dB. The mixer works from 3.5 to 14.5 GHz.
  • Item type:Item,
    10-GHz highly symmetrical sub-harmonic Gilbert mixer using GaInP/GaAs HBT technology
    (2007-05-01)
    Wu, Tzung-Han
    ;
    Meng, Chinchun
    ;
    電信工程研究所
    ;
    Institute of Communications Engineering
    A 10-GHz sub-harmonic Gilbert mixer is demonstrated using GaInP/GaAs hetero-junction bipolar transistor technology. The local oscillator (LO) signal time-delay path in the sub-harmonic LO stage is compensated using the fully symmetrical stacked-LO doubler; therefore, the balance of the sub-harmonic LO stage, the radio frequency to intermediate frequency isolation, and IIP2 are improved. The demonstrated 10-GHz sub-harmonic mixer achieves 10 dB conversion gain, IP1dB of -12 dBm, IIP3 of 2 dBm and IIP2 of 33 dBm.
  • Item type:Item,
    GaInP/GaAs HB broadband inductorless receiver
    (2008-01-01)
    Wu, Tzung-Han
    ;
    Meng, Chinchun
    ;
    Huang, Guo-Wei
    ;
    電信工程研究所
    ;
    Institute of Communications Engineering
    A GaInP/GaAs HBT broadband RF front-end consisting of a low-noise wideband amplifier and a micromixer is demonstrated in this article. The major advantage of this work is the elimination of inductors and thus the chip area can be greatly saved. The bandwidth of the RF front-end is up to 7 GHz. The measured conversion gain is higher than 25 dB from 1 to 7 GHz and the noise figure of the RF front-end is less than 8 dB within the bandwidth. (c) 2007 Wiley Periodicals, Inc.
  • Item type:Item,
    Seven GHz high gain 0.18 mu m CMOS gilbert downconverter with wide-swing cascode current mirrors
    (2008-02-01)
    Tseng, Sheng-Che
    ;
    Meng, Chinchun
    ;
    Huang, Guo-Wei
    ;
    電信工程研究所
    ;
    Institute of Communications Engineering
    A downconversion micromixer with low-voltage cascode current mirrors at both transconductor and load stages has been implemented using the 0.18-mu m CMOS technology in this article. This micromixer has a single-to-differential RF input transconductor formed by the NMOS wide-swing cascade current mirror, while the PMOS wide-swing cascode current mirror is also employed to improve conversion gain. A super source follower is used at the output to reduce the output impedance and to transfer more power to the load. This fully integrated downconverter has the high conversion gain of 16 dB and high LO-to-IF isolation of 50 dB at 7 GHz. The current consumption of the mixer core is 1 mA at 1.8 V supply voltage. Thanks to the low-voltage operation property of the wide-swing cascode current mirror, six transistors can be stacked within 1.8 V supply voltage. (c) 2007 Wiley Periodicals, Inc.
  • Item type:Item,
    A fully single-ended GaInP/GaAs HBT micromixer using an integrated active LO balun
    (2008-07-01)
    Wu, Tzung-Han
    ;
    Lin, Yi-Chen
    ;
    Meng, Chinchun
    ;
    Wu, Tse-Hung
    ;
    Wei, Hung-Ju
    A Gilbert micromixer is demonstrated in this paper using GaInP/GaAS HBT technology. By using an on-chip active LO balun, the micromixer with the single-ended RF, LO, and IF ports is suitable for hybrid RF system applications. The port-to-port isolation has its best performance when the LO signal is balanced. The fully matched high-linearity micromixer has the conversion gain of 12dB, IP1dB of -9 dBm, IIP3 of 1 dBm when f(IF(input)) = 300 MHz, f(LO) = 3.5 GHz, and f(RF(output)) = 3.8 GHz. (C) 2008 Wiley Periodicals, Inc.
  • Item type:Item,
    A silicon monolithic phase-inverter rat-race coupler using spiral coplanar striplines and its application in a broadband Gilbert mixer
    (2008-08-01)
    Tseng, Sheng-Che
    ;
    Meng, Chinchun
    ;
    Chang, Chia-Hung
    ;
    Chang, Shih-Hsien
    ;
    Huang, Guo-Wei
    This paper realized a broadband uniplanar phase-inverter rat-race coupler using a standard silicon process, and then analyzed this coupler under a lossy condition. A phase inverter is employed in this coupler, not only to extend the operation bandwidth, but also to generate balanced outputs by providing equal lossy paths, while symmetrical spiral-shaped coplanar striplines (CPSs) are also utilized to shrink the coupler size, as well as to construct a phase inverter in the middle of one of spiral CPSs. The lossy CPS, when designed as a distortionless line, has a real characteristic impedance, and thus, perfect port matching of the coupler can be achieved at the center frequency. The operation frequency of this silicon monolithic rat-race coupler with the size of 0.5 mm(2) is extremely wide and ranges from 5 to 23 GHz. The dissipated loss, transmission coefficient, and isolation of the rat-race coupler are approximately 5.5, -8, and below -25 dB, respectively. In addition, a wideband Gilbert micromixer with an integrated uniplanar phase-inverter rat-race coupler at the local oscillator port is demonstrated using 0.35-mu m SiGe BiCMOS technology. This mixer works from 2.5 to 13 GHz with 12-dB conversion gain, -16-dBm IP(1) (dB), -4-dBm IIP(3), and 14-dB noise figure. The chip size of the mixer with an integrated coupler is approximately 1.4 mm x 1.4 mm.
  • Item type:Item,
    Comparison of wideband Gilbert micromixers using SiGe HBT and GaInP/GaAs HBT technologies
    (2008-09-01)
    Syu, Jin-Siang
    ;
    Meng, Chinchun
    ;
    Wu, Chih-Kai
    ;
    Huang, Guo-Wei
    ;
    電信工程研究所
    Wideband downconversion mixers are demonstrated by using both 0.35-mu m SiGe heterojunction bipolar transistor (HBT) and 2-mu m GaInP/GaAs HBT technologies. A micromixer topology is implemented in the RF port while a differential type shunt-shunt feedback amplifier and a differential-to-single CE-CC output buffer are used in the IF stage. The frequency response analysis and systematic measurement approach for a wideband Gilbert mixer are proposed in this article for each individual stage of local frequency (LO), radio frequency (RF), and intermediate frequency (IF). The differential LO signals are generated by several off-chip 180 degrees hybrids to cover more than 8:1 bandwidth. The SiGe HBT Micromixer achieves the conversion gain of 6 dB, IP(IdB) of -17.5 dBm, and IIP(3) of - 7 dBm with the 3.3-V supply voltage and the power consumption of 37.5 mW. On the other hand, the GaInP/GaAs HBT Micromixer achieves the conversion gain of 25 dB, IP(IdB) of -25 dBm, and IIP(3) of - 15 dBm with the 5-V supply voltage and the power consumption of 50 mW. (c) 2008 Wiley Periodicals, Inc.