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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.CHAN, SHHas files: No

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Now showing 1 - 9 of 9
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    SILICON DELTA-DOPING OF GAINP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
    (1995-09-01)
    WANG, CJ
    ;
    WU, JW
    ;
    CHAN, SH
    ;
    CHANG, CY
    ;
    SZE, SM
    Silicon delta doping in GaInP material has been demonstrated by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) and characterized by Hall-effect and capacitance-voltage (C-V) measurements. The mobility enhancement of delta-doped samples over their corresponding uniformly doped samples was observed. High sheet carrier density of N-S=1.21 x 10(13) cm(-2) could be obtained. A sharp carrier distribution profile with the full width at half maximum of 25 Angstrom has been achieved.
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    THE SELECTIVITY OF REACTIVE ION ETCH OF GA0.51IN0.49P/GAAS
    (1994)
    WU, JW
    ;
    CHAN, SH
    ;
    LIN, KC
    ;
    CHANG, CY
    ;
    CHANG, EY
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    SEMIINSULATING IRON-DOPED INDIUM-PHOSPHIDE GROWN BY LOW-PRESSURE METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION
    (1993-03-01)
    WU, CC
    ;
    FENG, MS
    ;
    LIN, KC
    ;
    CHAN, SH
    ;
    CHANG, CY
    (C5H5)2Fe and Fe(CO)5 were used as the 3d transition-metal dopant sources in the growth of semi-insulating InP epitaxial layers by low-pressure metal-organic chemical vapour deposition (MOCVD). From the bright- and dark-field images of transmission electron microscopy (TEM) analysis, many precipitates were observed. Three extra peaks in the X-ray diffraction pattern were found. The peaks of band-band recombination, donor-acceptor pair recombination transitions and the recombination of donor-acceptor pair with one-phonon emission were observed in the short-wavelength range of low-temperature photoluminescence measurement. Three Fe-related peaks were observed at 0.7079, 0.6897 and 0.6683 eV. For a wide range (10-600) of In/Fe molar fraction, the resistivity remained at high values (about 10(8) OMEGA cm) and the highest resistivity appeared at 5 x 10(8) OMEGA cm for a 1 mum layer with a breakdown voltage of 9 V.
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    CARBON INCORPORATION DURING GROWTH OF GAAS BY TEGA-ASH3 BASE LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
    (1993-06-01)
    CHEN, HD
    ;
    CHANG, CY
    ;
    LIN, KC
    ;
    CHAN, SH
    ;
    FENG, MS
    Heavily carbon-doped GaAs (1 X 10(18) approximately 1 X 10(20) cm-3) grown by low-pressure metalorganic chemical vapor deposition using triethylgallium and arsine as sources and liquid carbon-tetrachloride (CCl4) as dopant has been investigated. The carrier concentration was verified at various growth temperatures, V/III ratios, and CC]4 flow rates. Dopant concentration first increased from 550-degrees-C and reached a maximum at 570-degrees-C growth temperature (T(g)) and then decreased monotonously. Carbon incorporation was strongly enhanced when the V/III ratio was less than 30 at T(g) = 590-degrees-C or less than 40 at T(g) = 630-degrees-C. Hole concentration increased and then decreased as CCl4 flow rate increased. Growth rate of layers decreased as growth temperature and flow rate Of CCl4 increased. The doping efficiency of epitaxial layers grown on the (100) substrate was higher than that on the 2-degrees off toward [110] misoriented substrate. Carbon-doped GaAs films had higher Hall mobility than zinc-doped GaAs films at high doping levels due to less self-compensation. The highest dopant concentration in this system was 2.3 X 10(20) cm-3 at T(g) = 580-degrees-C and V/III = 10.
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    DOPING OF INGAP EPITAXIAL LAYERS GROWN BY LOW-PRESSURE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION
    (1993-06-20)
    WU, CC
    ;
    LIN, KC
    ;
    CHAN, SH
    ;
    FENG, MS
    ;
    CHANG, CY
    DEZn and H2Se were utilized as p- and n-type dopant sources for the growth in InGaP layers by low pressure metal-organic chemical vapor deposition (LP-MOCVD). The decrease in intensity of the extra spots of electron diffraction indicates that disordering is induced by the zinc doping. Streaky and wavy diffraction patterns demonstrate the formation of anti-phase domains caused by the Se dopant incorporation. The growth rate of the grown layer is reduced by more than 10% owing to the dopant incorporation. A photoluminescence emission energy difference of 141 meV between undoped and Zn-doped (5.8 x 10(18) cm-3) InGaP was obtained. The effects of doping on disordering, degeneracy of quasi-Fermi level and lattice constant reduction of grown layers were included in this study.
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    MAGNESIUM DOPING OF INGAALP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
    (1994-09-05)
    WU, CC
    ;
    CHANG, CY
    ;
    CHEN, PA
    ;
    CHEN, HD
    ;
    LIN, KC
    Bis(cyclopentadienyl) magnesium, CP2Mg, was used as a magnesium dopant in the InGaAlP layers by low-pressure metalorganic chemical vapor deposition. The hazy surface morphology of heavily doped InGaAlP layers is significantly improved by using magnesium dopant instead of the conventional zinc dopant. We demonstrate that the effective doping efficiency of magnesium is two orders of magnitude higher than that of zinc dopant in the heavily doped InGaAlP layer grown at 720-degrees-C.
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    INVESTIGATIONS ON THE COMPOSITIONAL NONUNIFORMITY OF SELECTIVELY GROWN GAXIN1-XP BY LP-MOCVD USING EDMI, TMI, TEG, AND TMG AS GROUP-III SOURCES
    (1994-12-01)
    CHAN, SH
    ;
    CHANG, CY
    ;
    SZE, SM
    ;
    交大名義發表
    ;
    電子工程學系及電子研究所
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    Item type:Item,
    SELECTIVE EPITAXIAL-GROWTH OF GAINP BY LP-MOCVD USING ETHYLDIMETHYLINDIUM, TRIMETHYLINDIUM, TRIMETHYLGALLIUM AND TRIETHYLGALLIUM AS GROUP-III SOURCES
    (1994-12-01)
    CHAN, SH
    ;
    SZE, SM
    ;
    CHANG, CY
    ;
    LEE, WI
    ;
    電子物理學系
    The present experiments demonstrate the epitaxial growth (EG) and selective epitaxial growth (SEG) of GaInP by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) using ethyldimethylindium (EDMI), trimethylindium (TMI), trimethylgallium (TMG) and triethylgallium (TEG) as group III sources. In epitaxial growth of GaInP, the Ga incorporation efficiency using TEG+EDMI is found to be lower than those using other combinations. Completely selective epitaxy using TEGa + EDMIn can be achieved at a growth temperature of 675-degrees-C and at a growth pressure of 40 Torr, while other combinations (TEG + TMI, TMG + TMI, and TMG + EDMI) can achieve SEG of GaInP at 650-degrees-C. High resolution double-crystal X-ray measurements are used to investigate the compositional variation in the selectively epitaxial-grown area.
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    SILICON DELTA-DOPING OF GAINP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
    (1995-09-01)
    WANG, CJ
    ;
    WU, JW
    ;
    CHAN, SH
    ;
    CHANG, CY
    ;
    SZE, SM
    Silicon delta doping in GaInP material has been demonstrated by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) and characterized by Hall-effect and capacitance-voltage (C-V) measurements. The mobility enhancement of delta-doped samples over their corresponding uniformly doped samples was observed. High sheet carrier density of N-S=1.21 x 10(13) cm(-2) could be obtained. A sharp carrier distribution profile with the full width at half maximum of 25 Angstrom has been achieved.