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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF SILICON-CARBIDE THIN-FILMS FROM ORGANOPOLYSILANES
(1991-06-01)
CHIU, HT
;
WU, PF
;
交大名義發表
;
應用化學系
;
National Chiao Tung University
(Me3Si)2SiMe2, (Me3Si)3SiMe and (Me3Si)4Si were used as precursors for the deposition of polycrystalline beta-SiC thin films on silicon substrates at 1000-1200-degrees-C in a low-pressure hot-wall chemical vapor deposition reactor. The thin films were analyzed by X-ray diffraction, scanning electron microscopy and X-ray photoelectron spectroscopy.
DEPOSITION OF SILICON-CARBIDE THIN-FILMS FROM 1,1-DIMETHYL-1-SILACYCLOBUTANE
(1992-08-01)
CHIU, HT
;
LEE, SF
;
交大名義發表
;
應用化學系
;
National Chiao Tung University
1,1-Dimethyl-1-silacyclobutane was used as a single-source precursor to deposit SiC thin films on Si(100) and Si(111) by low-pressure chemical vapor deposition (LPCVD). Polycrystalline beta-SiC thin films were grown at temperatures 1100 and 1200-degrees-C. At temperatures between 950 and 1100-degrees-C, amorphous thin films of silicon carbide were obtained. The films were studied by X-ray diffraction (XRD), infrared spectroscopy (IR), scanning electron microscopy (SEM), scanning transmission electron microscopy (STEM), and electron diffraction (ED).