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學術出版;;Publications

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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作,涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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  • Item type:Item,
    A novel thin-film transistor with vertical offset structure
    (1997-04-01)
    Lin, CW
    ;
    Chang, CY
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    A novel device structure consisting of conventional hydrogenated amorphous silicon (a-Si:H) for the source and drain and of hydrogenated microcrystalline soilicon (mu c-Si:H) for the channel region which can improve the performance of thin-film transistors (TFTs) has been proposed and fabricated. Undoped a-Si:H serves as a blocking layer to suppress the OFF-state current in the drain region which is comparable to that of conventional a-Si:H TFT with a much higher drivability. The fabrication process is simple and inexpensive e with the possibility of high reliability.
  • Item type:Item,
    A novel thin-film transistor with vertical offset structure
    (1997-04-01)
    Lin, CW
    ;
    Chang, CY
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    A novel device structure consisting of conventional hydrogenated amorphous silicon (a-Si:H) for the source and drain and of hydrogenated microcrystalline soilicon (mu c-Si:H) for the channel region which can improve the performance of thin-film transistors (TFTs) has been proposed and fabricated. Undoped a-Si:H serves as a blocking layer to suppress the OFF-state current in the drain region which is comparable to that of conventional a-Si:H TFT with a much higher drivability. The fabrication process is simple and inexpensive e with the possibility of high reliability.