A novel thin-film transistor with vertical offset structure

Abstract

A novel device structure consisting of conventional hydrogenated amorphous silicon (a-Si:H) for the source and drain and of hydrogenated microcrystalline soilicon (mu c-Si:H) for the channel region which can improve the performance of thin-film transistors (TFTs) has been proposed and fabricated. Undoped a-Si:H serves as a blocking layer to suppress the OFF-state current in the drain region which is comparable to that of conventional a-Si:H TFT with a much higher drivability. The fabrication process is simple and inexpensive e with the possibility of high reliability.