標題: | A novel thin-film transistor with vertical offset structure |
作者: | Lin, CW Chang, CY 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | amorphous silicon;microcrystalline silicon;vertical offset;transfer characteristics;thin film transistor |
公開日期: | 1-四月-1997 |
摘要: | A novel device structure consisting of conventional hydrogenated amorphous silicon (a-Si:H) for the source and drain and of hydrogenated microcrystalline soilicon (mu c-Si:H) for the channel region which can improve the performance of thin-film transistors (TFTs) has been proposed and fabricated. Undoped a-Si:H serves as a blocking layer to suppress the OFF-state current in the drain region which is comparable to that of conventional a-Si:H TFT with a much higher drivability. The fabrication process is simple and inexpensive e with the possibility of high reliability. |
URI: | http://dx.doi.org/10.1143/JJAP.36.2032 http://hdl.handle.net/11536/626 |
ISSN: | 0021-4922 |
DOI: | 10.1143/JJAP.36.2032 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS |
Volume: | 36 |
Issue: | 4A |
起始頁: | 2032 |
結束頁: | 2043 |
顯示於類別: | 期刊論文 |