標題: | The effects of microcrystalline silicon film structure on low-high-low band-gap thin film transistor |
作者: | Chang, CY Lee, YS Huang, TY Shih, PS Lin, CW 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | thin-film transistor (TFT);microcrystalline;amorphous;crystalline factor |
公開日期: | 29-一月-2000 |
摘要: | The effects of hydrogenated microcrystalline silicon (mu c-Si:H) film with various crystalline factors on thin-film transistors (TFTs) with low-high-low band gap structure are studied. Compared to hydrogenated amorphous silicon (a-Si:H) TFT with conventional inverted-stagger structure, the device with mu c-Si:H film of high crystalline factor in the active channel depicts improved interfacial active layer near the gate insulator interface as well as the later-grown bulk active layer, resulting in improved device parameters including field effect mobility, threshold voltage, subthreshold swing and ON-current. While a-Si:H film of low crystalline factor and high-band-gap is proposed for the source and drain offset regions in the new device to prevent the band-to-band tunneling, thus alleviates the high OFF-current inherent in conventional mu c-Si:H thin-film transistors, resulting in an improved ON/OFF current ratio. (C) 2000 Elsevier Science S.A. All rights reserved. |
URI: | http://dx.doi.org/10.1016/S0254-0584(99)00174-1 http://hdl.handle.net/11536/30797 |
ISSN: | 0254-0584 |
DOI: | 10.1016/S0254-0584(99)00174-1 |
期刊: | MATERIALS CHEMISTRY AND PHYSICS |
Volume: | 62 |
Issue: | 2 |
起始頁: | 153 |
結束頁: | 157 |
顯示於類別: | 期刊論文 |