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Thermal stability of W-contacted junction diodes
(1996-06-01)
Yeh, WK
;
Chan, KY
;
Chang, TC
;
Chen, MC
;
Lin, MS
This work investigates the thermal stability of W-contacted p(+)n junction diodes, in which the tungsten contact was formed by selective chemical vapor deposition (CVD) or sputtering process. Reaction of Al and CVD-W at elevated temperature leads to the formation of WAl12, and the barrier capability of CVD-W film was dependent on the consumption of W. The sputter-W film has a columnar structure and contains a higher content of oxygen. The presence of oxygen retarded the formation of WAl12 and thus enhanced the thermal stability of the Al/W/Si structure. However, degradation of the Al/sputter-W (100 nm)/p(+)n diodes occurred after 30 min annealing at 550 degrees C, presumably due to Al diffusion along the grain boundary of sputter-W film. For the CVD-W contacted junction diodes, insertion of a thin TiN barrier layer between the Al and W film was effective in suppressing the formation of WAl12 and thus improved the device's thermal stability.
Chemical mechanical polishing for selective CVD-W
(1997-10-30)
Wang, MT
;
Yeh, WK
;
Tsai, MS
;
Tseng, WT
;
Chang, TC
This work investigates chemical mechanical polishing (CMP) for W-filled contact holes, vias, and trenches by selective chemical vapor deposition. A novel process that combines the CMP technique with selective chemical vapor deposition of tungsten (CVD-W) was employed to remove nail heads due to overgrowth and W-particles on the surface of dielectric due to selectivity loss. The overfilled nail heads and the selectivity loss can be completely removed with very low down-pressure (3 psi) in a very short polishing time (30 s). This indicates that the novel process is very promising for ULSI multilevel interconnection application. The removal rate selectivities of W to thermal oxide, PECVD-TEOS, and BPSG were found to be 47:1, 30:1 and 15:1, respectively, while the selectivities of W to the barrier metals of TiW, Ti and Ta were determined to be 0.6:1, 6:1 and 28:1, respectively. (C) 1997 Elsevier Science S.A.
Interfacial abruptness in Si/SiGe heteroepitaxy grown by ultrahigh vacuum chemical vapor deposition
(1997-09-01)
Tsai, WC
;
Chang, CY
;
Jung, TG
;
Chang, TC
;
Lin, HC
High-quality Si/Si1-xGex strained-layer superlattices have been grown in the temperature range 525 degrees C-550 degrees C by ultrahigh vacuum chemical vapor deposition. We employed X-ray reflection and high-resolution double-crystal X-ray diffraction measurements to study the dimensional and compositional variations in a Si/Si1-xGex superlattice. From the X-ray reflection results, the interfacial roughness of Si layers on SiGe, and SiGe layers on Si, is 0.1nm for growth at 525 degrees C and 0.2nm for growth at 550 degrees C. A simple model for estimating the interfacial abruptness of Si/Si1-xGex heterojunctions is proposed. In this model, a transition region with a linearly graded Ge composition is assumed to exist at both Si/Si1-xGex interfaces. The Ge composition x of a Si/Si1-xGex superlattice is found to increase with the growth time at a constant gas phase composition. This phenomenon can be explained by this model, and the thickness of the transition region and the transition time can be extracted from these fitting results. The transition thicknesses are found to be about 0.3-0.7nm for growth at 525 degrees C and 1-1.5nm for growth at 550 degrees C.
Photoluminescence from ordered and disordered Si-SiGe superlattices
(1996-10-01)
Chang, TC
;
Yeh, WK
;
Mei, YJ
;
Tsai, WC
;
Chen, YF
Ordered (Ord-SL) and disordered (Dis-SL) Si-SiGe superlattices are grown using ultrahigh vacuum chemical vapour deposition (UHVCVD). The results of cross-sectional transmission electron microscopy (XTEM) and high-resolution double crystal x-ray diffraction (HRXRD) indicate that high quality Si-SiGe superlattices can be achieved. Well-defined band-edge excitonic luminescence is observed for the Si0.86Ge0.14-Si superlattice. Stronger phosoluminescence (PL) is observed for the Si-SiGe disordered superlattice compared with the corresponding Si-SiGe ordered superlattice. Furthermore, PL peak energy of the Dis-SL shifts to lower value with respect to the peak position of the corresponding Ord-SL. The stronger intensity of the no-phonon (NP) peak and the red shift of the PL peak are possibly a result of two probable mechanisms: (i) the tunnelling effect and (ii) the formation of localized states.
Chemical mechanical polishing for selective CVD-W
Wang, MT
;
Yeh, WK
;
Tsai, MS
;
Tseng, WT
;
Chang, TC
This work investigates chemical mechanical polishing (CMP) for W-filled contact holes, vias, and trenches by selective chemical vapor deposition. A novel process that combines the CMP technique with selective chemical vapor deposition of tungsten (CVD-W) was employed to remove nail heads due to overgrowth and W-particles on the surface of dielectric due to selectivity loss. The overfilled nail heads and the selectivity loss can be completely removed with very low down-pressure (3 psi) in a very short polishing time (30 s). This indicates that the novel process is very promising for ULSI multilevel interconnection application. The removal rate selectivities of W to thermal oxide, PECVD-TEOS, and BPSG were found to be 47:1, 30:1 and 15:1, respectively, while the selectivities of W to the barrier metals of TiW, Ti and Ta were determined to be 0.6:1, 6:1 and 28:1, respectively. (C) 1997 Elsevier Science S.A.
Chemical mechanical polishing for selective CVD-W
Wang, MT
;
Yeh, WK
;
Tsai, MS
;
Tseng, WT
;
Chang, TC
This work investigates chemical mechanical polishing (CMP) for W-filled contact holes, vias, and trenches by selective chemical vapor deposition. A novel process that combines the CMP technique with selective chemical vapor deposition of tungsten (CVD-W) was employed to remove nail heads due to overgrowth and W-particles on the surface of dielectric due to selectivity loss. The overfilled nail heads and the selectivity loss can be completely removed with very low down-pressure (3 psi) in a very short polishing time (30 s). This indicates that the novel process is very promising for ULSI multilevel interconnection application. The removal rate selectivities of W to thermal oxide, PECVD-TEOS, and BPSG were found to be 47:1, 30:1 and 15:1, respectively, while the selectivities of W to the barrier metals of TiW, Ti and Ta were determined to be 0.6:1, 6:1 and 28:1, respectively. (C) 1997 Elsevier Science S.A.
Comparison of N-2 and NH3 plasma passivation effects on polycrystalline silicon thin-film transistors
(1998-07-01)
Lee, YS
;
Lin, HY
;
Lei, TF
;
Huang, TY
;
Chang, TC
The passivation effects of pure N-2 plasma on polycrystalline silicon (poly-Si) thin-film transistors (TFTs) have been studied and compared with those of NH3 plasma. We found that, similar to the recently-proposed NH3 plasma passivation, N-2 plasma passivation can also effectively improve device parameters such as field effect mobility, threshold voltage subthreshold swing, off current, and on/off current ratio. While the improvement of NH3-passivated devices can be attributed to both hydrogen and nitrogen passivation effects, nitrogen passivation alone is mainly responsible for the improvement of N-2-passivated devices. Zn addition, we round that N-2-passivated devices exhibit much better hot-carrier reliability than NH3-passivated devices. The better hot-carrier reliability of N-2-passivated devices can be explained by the formation of strong Si-N bonds which are difficult to break, while effectively eliminating the weaker N-H bonds, which are inevitable in NH3-passivated devices. The results of a Fourier. transform infrared (FTIR) spectrum analysis performed in this study are consistent with this proposition.
Characterization of multilayered Ti/TiN films grown by chemical vapor deposition
(1998-11-02)
Hu, JC
;
Chang, TC
;
Chen, LJ
;
Yang, YL
;
Chang, CY
The resistivity of multilayered Ti/TiN films grown by chemical vapor deposition can be reduced from 240 mu Omega cm (standard sample) to 120 mu Omega cm with NH3 plasma post-treatment for 300 s. Increasing the number of multilayered Ti/TiN mu ms of reduced thickness and a plasma post-treatment technique contributed to reducing the resistivity of TiN films effectively. Smooth multilayered Ti/TiN films were observed by XTEM image. The content of chlorine in the multilayered Ti/TiN film was 1.6 at.%. Therefore, corrosion in the subsequent Al film should be minimized. SIMS depth profiles of the multilayered Ti/TiN sample showed that Ti atom distribution is fairly uniform. The result is in agreement with the observation of XTEM and the measurement of AES depth profiles. The resistivity of multlayered Ti/TiN films can be further reduced to 75 mu Omega cm with an in situ NH3 plasma post-treatment (500 W) for 300 s followed by RTA at 900 degrees C for 60 s. Therefore, low resistivity (<100 mu Omega cm) and low Cl concentration (<2 at.%) CVD TiN films can be achieved by a combination of forming a multilayered Ti/TiN structure, and using NH3 plasma post-treatment and RTA. (C) 1998 Elsevier Science S.A. All rights reserved.
Enhancing the oxygen plasma resistance of low-k methylsilsesquioxane by H-2 plasma treatment
(1999-06-01)
Liu, PT
;
Chang, TC
;
Mor, YS
;
Sze, SM
;
電子工程學系及電子研究所
The organic silsesquioxane, methylsilsesquioxane (MSQ), has a low dielectric constant because of its low film density compared to thermal oxide. However, the quality of the MSQ film is degraded by the damage caused by oxygen plasma and hygroscopic behavior during photoresist stripping. In this work, we have studied the ability of H-2 plasma treatment to improve the quality of MSQ. The leakage current of MSQ decreases as the H-2 plasma treatment time is increased. The dielectric constant of treated samples remains constant (similar to 2.7). In addition, the thermal stability of MSQ film is significantly promoted. The H-2 plasma treatment can provide additional hydrogen to passivate the inner structure of porous MSQ film, and reduce the probability of moisture uptake. Therefore, H-2 plasma treatment can improve the quality of low-k MSQ film and reduce the issue of photoresist stripping in the integrated process.
Highly (111) textured titanium nitride layers for sub- quarter-micrometer Al metallization
(1999-07-01)
Wu, WF
;
Lin, CC
;
Huang, CC
;
Lin, HC
;
Chang, TC
Texture improved TiN films were prepared by a two-step deposition process. A thin uncollimated TiN layer is deposited first at low substrate temperature and sputtering power. This layer has poor step coverage and high resistivity, but acts as a crystallographic seed layer for the subsequent collimated TiN layer deposited at high substrate temperature and sputtering power. The TiN layer stack is deposited sequentially without vacuum break. The resulting TiN layer has a low resistivity of 72.25 mu Omega cm, high <111> preferred orientation, and improved bottom coverage in sub-quarter-micrometer contact holes and trenches. (C) 1999 The Electrochemical Society. S1099-0062(99)01-023-8. All rights reserved.

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