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Author: search.filters.author.Chen, JFSubject: search.filters.subject.deep levels

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Now showing 1 - 6 of 6
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    Deep levels, electrical and optical characteristics in SnTe-doped GaSb Schottky diodes
    (1996-11-01)
    Chen, JF
    ;
    Chen, NC
    ;
    Liu, HS
    ;
    電子物理學系
    ;
    Department of Electrophysics
    The GaSb layers investigated were grown directly on GaAs substrates by molecular beam epitaxy (MBE) using SnTe source as the n-type dopant. By using admittance spectroscopy, a dominant deep level with the activation energy of 0.23-0.26 eV was observed and its concentration was affected by the Sb-4/Ga flux ratio in the MBE growth. A lowest deep-level concentration together with a highest mobility was obtained for GaSb grown at 550 degrees C under a Sb-4/Ga beam equivalent pressure (BEP) ratio around 7, which should correspond to the lowest ratio to maintain a Sb-stabilized surface reconstruction. In the Hall measurement, an analysis of the temperature-dependent mobility shows that the ionized impurity concentration increases proportionally with the sample's donor concentration, suggesting that the ionized impurity was introduced by an SnTe source. In addition, optical properties of an undoped p-, a lightly and heavily SnTe-doped GaSb layers were studied by comparing their photoluminesence spectra at 4.5K.
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    Effects of high-resistivity, low-temperature layer in transient capacitance measurements of GaAs n-i-p structures
    (1998-10-15)
    Chen, JF
    ;
    Wang, PY
    ;
    Chen, NC
    ;
    電子物理學系
    ;
    Department of Electrophysics
    Deep-level transient spectroscopy and transient capacitance measurements are performed on a molecular-beam-epitaxially grown GaAs n-i-p diode with a 2000-Angstrom-thick low-temperature OLT)-grown layer immersed in its intrinsic region. The transient capacitance measurements reveal that the time constant and activation energy are the same for both the emission and capture processes. An equivalent circuit based on capacitance-frequency spectra is derived and used to obtain the resistivity values of the LT layer that are in agreement with experimental results. It is concluded that the transient capacitance observed corresponds to the resistance-capacitance time constant due to the LT-layer. In addition, the value of the activation energy is explained based on the equivalent circuit.
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    Observation of a dominant EL2-like mid-gap trap in In0.12Ga0.88As/GaAs superlattice grown at low temperature by molecular beam epitaxy
    (1999-11-01)
    Chen, JF
    ;
    Wang, PY
    ;
    Wang, JS
    ;
    Wong, HZ
    ;
    電子物理學系
    Admittance spectroscopy is used to study a low-temperature (LT)-grown relaxed In0.12Ga0.88As/GaAs p-i-n superlattice. The capacitance-frequency spectra show two step-like trapping effects which are explained by the existence of two traps (E-a = 0.73 eV, sigma = 4.6 x 10(-11) cm(2) and E-a = 0.75 eV, sigma = 3.7 x 10(-15) cm(2)) in the LT-grown superlattice region. These two traps are the dominating defects observed in deep-level transient spectroscopy with one being a majority trap and the other being a minority trap. The emission parameters and photo-capacitance quenching effect for the 0.75 eV trap agree with those known for EL2 defects, suggesting that the EL2 defect is strongly enhanced in InGaAs/GaAs by LT growth.
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    Capacitance dispersion in n-LT-i-p GaAs structures with the low-temperature layers grown at different temperatures
    (1999-12-01)
    Chen, JF
    ;
    Chen, NC
    ;
    Wang, PY
    ;
    Wang, JS
    ;
    Weng, CM
    The electrical properties of annealed low-temperature GaAs are studied by investigating the frequency-dependent capacitance of n-LT-i-p structures with the low-temperature (LT) layers grown at different temperatures. Relative to the sample grown at 610 degrees C, the samples grown at 200, 300 and 400 degrees C show significant capacitance dispersions over frequency which is explained by the emission of carriers from traps. Based on a proposed band diagram where a dominating trap at 0.66-0.74 eV exists in the LT layers, the high-frequency dispersion is shown to be affected by resistance-capacitance (RC) time constant effects. From the mid-frequency capacitance versus voltage characteristics, the concentrations of the occupied traps are estimated to be approximate to 10(17) cm(-3) for samples grown at 200, 300 and 400 degrees C, which are found to be consistent with those obtained from analyzing the current-voltage characteristics of n(+)-LT-n(+) structures.
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    Item type:Item,
    Deep levels in SnTe-doped GaSb grown on GaAs by molecular beam epitaxy
    (1996-07-01)
    Chen, JF
    ;
    Chen, NC
    ;
    Liu, HS
    ;
    交大名義發表
    ;
    電子物理學系
    A dominant deep level with an activation energy of 0.23-0.26 eV was observed by admittance spectroscopy in SnTe-doped GaSb layers grown directly on GaAs substrates by molecular beam epitaxy (MBE). The Sb-4/Ga Bur ratio was found to affect the Hall mobility and the concentration of the deep level in a similar way, with an optimal beam equivalent pressure ratio of around 7 obtained for GaSb grown at 550 degrees C, which should correspond to the lowest ratio at which a Sb-stabilized surface reconstruction can be maintained. This electron level is commonly detected in n-type (SnTe-, S- and Te-doped) GaSb, but not in undoped p-type GaSb, suggesting that the level is not a simple native defect, but may be connected with the impurity used for n-type doping of GaSb.
  • Thumbnail Image
    Item type:Item,
    Deep levels, electrical and optical characteristics in SnTe-doped GaSb Schottky diodes
    (1996-11-01)
    Chen, JF
    ;
    Chen, NC
    ;
    Liu, HS
    ;
    交大名義發表
    ;
    電子物理學系
    The GaSb layers investigated were grown directly on GaAs substrates by molecular beam epitaxy (MBE) using SnTe source as the n-type dopant. By using admittance spectroscopy, a dominant deep level with the activation energy of 0.23-0.26 eV was observed and its concentration was affected by the Sb-4/Ga flux ratio in the MBE growth. A lowest deep-level concentration together with a highest mobility was obtained for GaSb grown at 550 degrees C under a Sb-4/Ga beam equivalent pressure (BEP) ratio around 7, which should correspond to the lowest ratio to maintain a Sb-stabilized surface reconstruction. In the Hall measurement, an analysis of the temperature-dependent mobility shows that the ionized impurity concentration increases proportionally with the sample's donor concentration, suggesting that the ionized impurity was introduced by an SnTe source. In addition, optical properties of an undoped p-, a lightly and heavily SnTe-doped GaSb layers were studied by comparing their photoluminesence spectra at 4.5K.