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Author: search.filters.author.Chen, Teng-MingSubject: search.filters.subject.Quantum dots

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Now showing 1 - 4 of 4
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    The Luminescent Down Shifting Effect of Single-Junction GaAs Solar Cell with Perovskite Quantum Dots
    (2019-01-01)
    Cho, Yu-Yun
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    Huang, Yu -Ming
    ;
    Hsu, Shun-Chieh
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    Kao, Sheng-Feng
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    Shih, Hsiang-Yun
    In this work, we demonstrate the Luminescent Down Shifting (LDS) effect of the single-junction GaAs solar cell with 514 nm Perovskite quantum dots with and without bake treatment. One of results shows that Jsc from 22.22 mA/cm(2) to 23.38 mA/cm(2) and the efficiency from 17.70% to 18.96% as high as 5.22% and 7.12% enhancement. The enhancement includes antireflection and LDS effect, via our calculated the increase J. from LDS effect was 31.65% Further storage lifetime test shows great reliability from these devices can be expected.
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    Evaluation of Luminescent Downshifting Effect of Perovskite Quantum Dots on Semiconductor Solar Cells
    (2018-01-01)
    Chen, Chun-Hong
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    Yu, Chung-Ping
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    Huang, Yu-Ming
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    Chan, Yueh-Lin
    ;
    Huang, Chung-Ping
    The luminescent down-shifting effect of the perovskite quantum dots on single junction GaAs solar cells are examined and discussed. The perovskite quantum dots can provide an effective way to convert ultra-violet photons in solar spectrum to visible ones which can be transformed into electron-hole pairs more efficiently. Three different designs are tried: direct-dispense, ITO nano-whisker up and ITO nano-whisker down. In this experiment, we use perovskite quantum dots(QDs) with the concentration of 1mg/ml and emit photons of the wavelength 530nm (CsPbBr3), and the various volume of perovskite QDs were deposited on the solar cell to observe the possible luminescent down-shifting phenomenon.
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    Liquid Type Nontoxic Photoluminescent Nanomaterials for High Color Quality White-Light-Emitting Diode
    (2018-12-22)
    Lin, Chih-Hao
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    Pai, Yung-Min
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    Lee, Chun-Fu
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    Verma, Akta
    ;
    Lin, Huang-Yu
    High-brightness white-light-emitting diodes (w-LEDs) with excellent color quality is demonstrated by using nontoxic nanomaterials. Previously, we have reported the high color quality w-LEDs with heavy-metal phosphor and quantum dots (QDs), which may cause environmental hazards. In the present work, liquid-type white LEDs composed of nontoxic materials, named as graphene and porous silicon quantum dots are fabricated with a high color rendering index (CRI) value gain up to 95. The liquid-typed device structure possesses minimized surface temperature and 25% higher value of luminous efficiency as compare to dispensing-typed structure. Further, the as-prepared device is environment friendly and attributed to low toxicity. The low toxicity and high R9 (87) component values were conjectured to produce new or improve current methods toward bioimaging application.
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    Infrared proximity sensor using organic light-emitting diode with quantum dots converter
    (2012-11-01)
    Chen, En-Chen
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    Yeh, Han-Cheng
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    Chao, Yu-Chiang
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    Meng, Hsin-Fei
    ;
    Zan, Hsiao-Wen
    An efficient visible-to-infrared conversion film is made by blending CdTe quantum dots (CdTe QDs) of 12 nm diameter in a polyvinylpyrrolidone 360 (PVP 360) polymer matrix cast by water solution. The solid-state photoluminescence quantum efficiency exceeds 10% with emission peak at 810 nm. Strong 810 emission is obtained by combining the quantum dot film and a green polyfluorene light-emitting diode. Color filter is used to remove residual light below 780 nm to make it entirely invisible. Infrared photo-detector is made by blending poly[5-(5-(2,5-bis(decyloxy)-4-methylphenyl)thiophen-2-yl)-2,3-bis(4-(2-ethylhexyloxy)phenyl)-7-(5-methylthiophen-2-yl)thieno[3,4-b]pyrazine] (PBDOTTP) with band-gap 1.2 eV and (6,6)-phenyl-C61-butyric acid methyl ester (PCBM). The pixel contains one PD surrounded by four PLED on its four sides. The active areas of the five devices are all I cm by 1 cm and they are on the same plane. Infrared proximity sensor with photo-current over 300 nA at 10 cm object distance is achieved by detecting the reflected infrared signal. (C) 2012 Elsevier B.V. All rights reserved.