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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Cheng, Chun-HuHas files: Yes

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Now showing 1 - 10 of 22
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    Nanotribological properties of ALD-processed bilayer TiO2/ZnO films
    (2014-12-01)
    Wang, Wun-Kai
    ;
    Wen, Hua-Chiang
    ;
    Cheng, Chun-Hu
    ;
    Hung, Ching-Hua
    ;
    Chou, Wu-Ching
    TiO2/ZnO films grown by atomic layer deposition (ALD) demonstrated nanotribological behaviors using scratch testing. TEM profiles obtained an amorphous structure TiO2 and nanocrystalline structure ZnO, whereas the sample has significant interface between the TiO2/ZnO films. The experimental results show the relative XRD peak intensities are mainly contributed by a wurtzite oxide ZnO structure and no signal from the amorphous TiO2. With respect to tribology, increased friction causes plastic deformation between the TiO2 and ZnO films, in addition to delamination and particle loosening. The plastic deformation caused by adhesion and/or cohesion failure is reflected in the nanoscratch traces. The pile-up events at a loading penetration of 30 nm were measured at 21.8 mu N for RT, 22.4 mu N for 300 degrees C, and 36 mu N for 400 degrees C. In comparison to the other conditions, the TiO2/ZnO films annealed at 400 degrees C exhibited higher scratch resistance and friction with large debris, indicating the wear volume is reduced with increased annealing temperature and loading. (C) 2014 Elsevier Ltd. All rights reserved.
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    An Oxygen Gettering Scheme for Improving Device Mobility and Subthreshold Swing of InGaZnO-Based Thin-Film Transistor
    (2014-09-01)
    Hsu, Hsiao-Hsuan
    ;
    Chang, Chun-Yen
    ;
    Cheng, Chun-Hu
    ;
    Chiou, Shan-Haw
    ;
    Huang, Chiung-Hui
    This study involved developing a low-power and high-mobility metal-oxide thin-film transistor that incorporated a bilayer IGZO/IGZO:Ti semiconductor material. Compared with control metal-oxide TFTs, the bilayer IGZO TFT through thickness modulation of IGZO: Ti can reach the smallest subthreshold swing (85 mV/decade) and the highest field effect mobility (49 cm(2)/Vs) at a drive voltage of <3 V. This performance level improvement can be attributed to the gettering effect caused by the IGZO: Ti capping layer and its dual advantages, which enhance device mobility and improve gate swing.
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    Amorphous bilayer TiO2-InGaZnO thin film transistors with low drive voltage
    (2014-09-01)
    Hsu, Hsiao-Hsuan
    ;
    Cheng, Chun-Hu
    ;
    Chiou, Ping
    ;
    Chiu, Yu-Chien
    ;
    Chang, Chun-Yen
    This paper describes a high-performance thin-film transistor (TFT) fabricated using TiO2 and InGaZnO semiconducting layers. Favorable transistor characteristics, including a low threshold voltage of 0.45 V, a small subthreshold swing of 174 mV/decade, and a high field effect mobility of 19 cm(2)/V s at a low drive voltage of <2 V, were achieved. This favorable performance mainly resulted from the combined effect of the high-dielectric-constant gate dielectric and the TiO2-InGaZnO active semiconductor bilayer, which reduced the operating voltage, enhanced the device mobility, and improved the transistor gate swing. This TiO2-InGaZnO TFT exhibits great potential for future high-speed and high-resolution display applications. (C) 2014 Elsevier Ltd. All rights reserved.
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    Performance comparison of titanium-oxide resistive switching memories using GeOx and AlOx capping layers for flexible application
    (2014-06-01)
    Chou, Kun-I
    ;
    Cheng, Chun-Hu
    ;
    Chin, Albert
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    To meet the requirements of flexible memory applications, we have compared two capping layers of GeOx and AlOx on a TiOy resistive random access memory (RRAM) at room temperature. A Ni/GeOx/TiOy/TaN RRAM shows a large resistance window of >10(2), 85 degrees C retention, a high-resistance-state (HRS) activation energy (E-a) of 0.52 eV, and a good DC cycling of 10(3) cycles, which are significantly better than those of a Ni/AlOx/TiOy/TaN RRAM, which has a high-defect-density dielectric of AlOx. (C) 2014 The Japan Society of Applied Physics
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    Improved high-temperature switching characteristics of Y2O3/TiOx resistive memory through carrier depletion effect
    (2014-05-01)
    Zheng, Zhi-Wei
    ;
    Hsu, Hsiao-Hsuan
    ;
    Cheng, Chun-Hu
    ;
    Chen, Po-Chun
    ;
    電子工程學系及電子研究所
    We report a stacked Y2O3/TiOx resistive random access memory (RRAM) device, showing good high-temperature switching characteristics of extremely low reset current of 1 A at 150 degrees C, large off/on resistance window (>200) at 150 degrees C, large rectification ratio of approximate to 300 at 150 degrees C and good current distribution at 85 degrees C. The good rectifying property, lower high-temperature sneak current and tighter high-temperature current distribution can be attributed to the combined results of the oxygen vacancies in TiOx and the related carrier depletion effect. ((c) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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    Structural stability of diffusion barriers in thermoelectric SbTe: From first-principles calculations to experimental results
    (2014-03-05)
    Hsu, Hsiao-Hsuan
    ;
    Cheng, Chun-Hu
    ;
    Chiou, Shan-Haw
    ;
    Huang, Chiung-Hui
    ;
    Liu, Chia-Mei
    This study involved developing robust diffusion barrier for n-type antimony telluride (SbTe) thermoelectric devices. Compared to conventional Ni barrier, the mid-band metals of Ta and TaN with favored ohmic-like contact exhibited smaller diffusion tail because of structurally stable interface on SbTe, which have been supported by first-principles calculations and demonstrated by experimental results. Furthermore, the TaN barrier has strong ionic Ta-N bonding and a high total energy of -4.7 eV/atom that could effectively suppress the formation of SbTe-compounds interfacial layer. (C) 2013 Elsevier B. V. All rights reserved.
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    Nanotribological behavior of ZnO films prepared by atomic layer deposition
    (2014-03-01)
    Wang, Wun-Kai
    ;
    Wen, Hua-Chiang
    ;
    Cheng, Chun-Hu
    ;
    Chou, Wu-Ching
    ;
    Yau, Wei-Hung
    We used atomic layer deposition to form ZnO thin-film coatings on Si substrates and then evaluate the effect of pile-up using the nanoscratch technique under a ramped mode. The wear volume decreased with increasing annealing temperature from room temperature to 400 degrees C for a given load. Elastic-to-plastic deformation occurred during sliding scratch processing between the groove and film for loading penetration of 30 nm. The onset of non-elastic behavior and greater contact pressure were evident for loading penetration of 150 nm; thus, full plastic deformation occurred as a result of a substrate effect. We suspect that elastic-plastic failure events were related to edge bulging between the groove and film, with elastic-plastic deformation attributable to adhesion discontinuities and/or cohesion failure of the ZnO films. (C) 2013 Elsevier Ltd. All rights reserved.
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    Low power resistive random access memory using interface-engineered dielectric stack of SiOx/a-Si/TiOy with 1D1R-like structure
    (2014-01-01)
    Cheng, Chun-Hu
    ;
    Chou, K. I.
    ;
    Zheng, Zhi-Wei
    ;
    Hsu, Hsiao-Hsuan
    ;
    電子工程學系及電子研究所
    In this study, we report a resistive random access memory (RRAM) using trilayer SiOx/a-Si/TiOy film structure. The low switching energy of <10 pJ, highly uniform current distribution (<13% variation), fast 50-ns speed and stable cycling endurance for 10(6) cycles are simultaneously achieved in this RRAM device. Such good performance can be ascribed to the use of interface-engineered dielectric stack with 1D1R-like structure. The SiOx tunnel barrier in contact with top Ni electrode to form diode-like rectifying element not only lowers self-compliance switching currents, but also improves cycling endurance, which is favorable for the application of high-density 3D memory. (C) 2013 Elsevier B. V. All rights reserved.
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    High Mobility Bilayer Metal-Oxide Thin Film Transistors Using Titanium-Doped InGaZnO
    (2014-01-01)
    Hsu, Hsiao-Hsuan
    ;
    Chang, Chun-Yen
    ;
    Cheng, Chun-Hu
    ;
    Chiou, Shan-Haw
    ;
    Huang, Chiung-Hui
    We report a high performance indium-gallium-zinc oxide (IGZO)/IGZO:Ti bilayer metal-oxide thin-film transistor (TFT) with a low drive voltage of <2 V. Compared with conventional IGZO TFTs, the novel bilayer metal-oxide TFTs through IGZO thickness modulation can reach the lowest off current of 1.6 x 10(-11) A, smallest sub-threshold swing of 73 mV/decade, and highest mobility of 63 cm(2)/Vs, which may create the potential application for high resolution display.
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    Low-Leakage-Current DRAM-Like Memory Using a One-Transistor Ferroelectric MOSFET With a Hf-Based Gate Dielectric
    (2014-01-01)
    Cheng, Chun-Hu
    ;
    Chin, Albert
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    The power consumption of capacitor leakage current, increase of the capacitor aspect ratio, and lack of higher dielectric constant (kappa) material are the difficult challenges to downscaling dynamic random access memory (DRAM). This letter reports a new one-transistor ferroelectric-MOSFET (1T FeMOS) device that displays DRAM functions of a 5 ns switching time, 10(12) on/off endurance cycles, and 30 times on/off retention windows at 5 s and 85 degrees C. A simple 1T process and a considerably low OFF-state leakage of 3 x 10(-12) A/mu m were achieved. This novel device was achieved by applying ferroelectric ZrHfO gate dielectric to a p-MOSFET, which is fully compatible with existing high-kappa CMOS processing.