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Author: search.filters.author.Chin, AHas files: Yes

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    The effect of native oxide on thin gate oxide integrity
    (1998-11-01)
    Chin, A
    ;
    Lin, BC
    ;
    Chen, WJ
    ;
    Lin, YB
    ;
    Thai, C
    We have studied the effect of native oxide on thin gate oxide integrity. Much improved leakage current of gate oxide can be obtained by in situ desorbing the native oxide using a HF-vapor treated and H-2 backed process. Furthermore, extremely sharp interface between oxide and Si is obtained, and good oxide reliability is achieved even under a high current density stress of 11 A/cm(2) and a large charge injection of 7.0 x 10(4) C/cm(2). The presence of native oxide will increase the interface roughness, gate oxide leakage current and stress-induced hole trap.
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    The effect of native oxide on epitaxial SiGe from deposited amorphous Ge on Si
    (1999-01-25)
    Wu, YH
    ;
    Chen, WJ
    ;
    Chin, A
    ;
    Tsai, C
    ;
    電子工程學系及電子研究所
    We have investigated the effect of native oxide on the epitaxial SiGe from deposited amorphous Ge on Si. Instead of epitaxial growth by molecular beam epitaxy or ultrahigh-vacuum chemical vapor deposition, the SiGe layer is formed by this simple process followed by an annealing step. As observed by transmission electron microscopy, the suppression of native oxide plays an important role to achieve epitaxial SiGe. The SiGe quality degrades with increasing native oxide thickness and becomes polycrystalline with a similar to 20 Angstrom interfacial native oxide. On the other hand, single crystalline SiGe can be routinely formed from a HF-vapor treated Si surface. (C) 1999 American Institute of Physics. [S0003-6951(99)04504-0].
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    Deuterium effect on stress-induced leakage current
    (1999-04-01)
    Lin, BC
    ;
    Cheng, YC
    ;
    Chin, A
    ;
    Wang, T
    ;
    Tsai, C
    We have studied and compared stress-induced leakage current in oxides subjected to H-2 and D-2 annealing. There is not much difference in stress-induced leakage current between thick 70-Angstrom-oxides annealed by these two isotopes. In sharp contrast, an improvement of several-fold in stress-induced leakage current is observed in 27-Angstrom-thick oxides annealed in D-2 ambient compared to that annealed in H-2. The significant improvement in this direct-tunneling oxide may be due to the passivation of intrinsic defects and dangling bonds in a transition SiOx layer.
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    Electrical characterization of Al2O3 on Si from thermally oxidized AlAs and Al
    (1999-05-01)
    Liao, CC
    ;
    Chin, A
    ;
    Tsai, C
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    The scaling limit for VLSI gate oxide (SiO2) is 15-20 Angstrom that is determined by the large direct-tunneling leakage current. Further scaling to improve device performance can be obtained using a higher dielectric constant material. We have studied the Al2O3 to use as an alternative gate dielectric. To ensure good quality, Al2O3 is thermally oxidized from MBE-grown AlAs or Al on Si-substrates. Experimental results indicate that the leakage current from oxidized AlAs is larger than that from directly oxidized Al, which may be due to the weak As2O3 inside Al2O3. The leakage current of a 53 Angstrom Al2O3 is already lower than that of SiO2 with an equivalent oxide thickness of 21 Angstrom. (C) 1999 Published by Elsevier Science B.V. All rights reserved.
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    Improved electrical characteristics of CoSi2 using HF-vapor pretreatment
    (1999-05-01)
    Wu, YH
    ;
    Chen, WJ
    ;
    Chang, SL
    ;
    Chin, A
    ;
    Gwo, S
    We have developed a simple process to form epitaxial CoSi2 for shallow junction. Prior to metal deposition, the patterned wafers were treated with HF-vapor passivation. As observed by scanning tunneling microscopy (STM), this HF, treatment drastically improves the native oxide-induced sur face roughness. The epitaxial behavior was confirmed by cross-sectional transmission electron microscopy (TEM), Decreased sheet resistance and leakage current, and improved thermal stability are displayed by the HF treated samples, which is consistent with STM and TEM results.
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    The leakage current effect of thin gate oxides (2.4-2.7 nm) with in situ native oxide desorption
    (1999-06-01)
    Lai, JM
    ;
    Chieng, WH
    ;
    Lin, BC
    ;
    Chin, A
    ;
    Tsai, C
    An intrinsic defect may exist in thin gate oxides. Such a defect can increase the leakage current in a manner similar to stress-induced leakage current. In this paper, we have shown that the effect of this intrinsic defect can be greatly reduced by in situ removal of the native oxide followed by growing a high-quality thermal oxide. By using such in situ cleaning, ultrathin oxides can be prepared with atomically smooth interfaces, good thickness uniformity, and reduced leakage currents. (C) 1999 The Electrochemical Society. All rights reserved.
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    Item type:Item,
    Improved electrical characteristics of CoSi2 using HF-vapor pretreatment
    (1999-07-01)
    Wu, YH
    ;
    Chen, WJ
    ;
    Chang, SL
    ;
    Chin, A
    ;
    Gwo, S
    We have developed a simple process to form epitaxial CoSi2 for shallow junction. Prior to metal deposition, the patterned wafers were treated with HF-vapor passivation. As observed hy scanning tunneling microscopy (STM), this HF treatment drastically improves the native oxide-induced surface roughness. The epitaxial behavior was confirmed by cross-sectional transmission electron microscopy (TEM). Decreased sheet resistance and leakage current, and improved thermal stability are displayed by the HF treated samples, which is consistent with STM and TEM results.
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    Gate oxide integrity of thermal oxide grown on high temperature formed Si0.3Ge0.7
    (2000-03-01)
    Wu, YH
    ;
    Chin, A
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    We have investigated the gate oxide integrity of thermal oxides direct grown on high temperature formed Si0.3Ge0.7 Good oxide integrity is evidenced by the low interface-trap density of 5.9 x 10(10) eV(-1)cm(-2), low oxide charge density of -5.6 x 10(10) cm(-2), and the small stress-induced leakage current after -3.3 V stress for 10 000 s, The good gate oxide integrity is due to the high temperature formed and strain-relaxed Si0.3Ge0.7 that has a original smooth surface and stable after subsequent high temperature process.
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    High-quality thermal oxide grown on high-temperature-formed SiGe
    (2000-05-01)
    Wu, YH
    ;
    Chen, SB
    ;
    Chin, A
    ;
    Chen, WJ
    ;
    電子工程學系及電子研究所
    We have developed a high-quality gate oxide on Si0.6Ge0.4 with a 30 Angstrom Si top layer. The good oxide integrity comparable to conventional thermal oxide is demonstrated by the low interface trap density of 6.2 X 10(10) eV(-1) cm(-2), low bride charge of 5.8 X 10(10) cm(-2), small leakage current at 3.3 V of 4.2 x 10(-8) A/cm(2), high breakdown field of 13.8 MV/cm, good charge-to-breakdown of 5.2 C/cm(2), and small stress-induced leakage current. This good oxide integrity is directly related to our previously developed SiGe formed by solid phase epitaxy at high temperatures that is stable during thermal oxidation. This simple process is fully compatible with existing very large scale integration technology. (C) 2000 The Electrochemical Society. S0013-4651(99)10-038-7. All rights reserved.
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    Thickness dependent gate oxide quality of thin thermal oxide grown on high temperature formed SiGe
    (2000-06-01)
    Wu, YH
    ;
    Chin, A
    ;
    Chen, WJ
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    For thin oxides grown on high temperature formed Si0.3Ge0.7, the gate oxide quality is strongly dependent on oxide thickness and improves as thickness reduces from 50 to 30 Angstrom. The thinner 30 Angstrom oxide has excellent quality as evidenced by the comparable leakage current, breakdown voltage, interface-trap density and charge-to-breakdown with conventional thermal oxide grown on Si. The achieved good oxide quality is due to the high temperature formed Si0.3Ge0.7 that is strain relaxed and stable during oxidation, The possible reason for strong thickness dependence may be due to the lower GeO2 content formed in thinner 30 Angstrom oxide rather than strain relaxation related rough surface or defects.