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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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Author: search.filters.author.Chin, ASubject: search.filters.subject.high-kappa

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Now showing 1 - 4 of 4
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    Schottky-barrier S/D MOSFETs with high-K gate dielectrics and metal-gate electrode
    (2004-05-01)
    Zhu, SY
    ;
    Yu, HY
    ;
    Whang, SJ
    ;
    Chen, JH
    ;
    Shen, C
    This letter presents a low-temperature process to fabricate Schottky-barrier silicide source/drain transistors (SSDTs) with high-kappa gate dielectric and metal gate. For p-channel SSDTs (P-SSDT) using PtSi source/drain (S/D), excellent electrical performance of I-on/I-off similar to 10(7) - 10(8) and subthreshold slope of 66 mV/dec have been achieved. For n-channel SSDTs (N-SSDTs) using DySi2-x S/D, I-on/I-off can reach similar to 10(5) at V-ds of 0.2 V with two subthreshold slopes of 80 and 340 mV/dec. The low-temperature process relaxes the thermal budget of high-kappa dielectric and metal-gate materials to be used in the future generation CMOS technology.
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    A TaN-HfO2-Ge pMOSFET with novel SiH4 surface passivation
    (2004-09-01)
    Wu, N
    ;
    Zhang, QC
    ;
    Zhu, CX
    ;
    Chan, DSH
    ;
    Du, AY
    In this letter, we demonstrate a novel surface passivation process for HfO2 Ge pMOSFETs using SiH4 surface annealing prior to HfO2 deposition. By using SiH4 passivation, a uniform amorphous interfacial layer is formed after device fabrication. Electrical results show that the HfO2 Ge MOSFET with Si-passivation exhibits less frequency dispersion, narrower gate leakage current distribution, and a similar to 140% higher peak mobility than that of the device with surface nitridation.
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    Germanium pMOSFETs with Schottky-barrier germanide S/D, high-kappa gate dielectric and metal gate
    (2005-02-01)
    Zhu, SY
    ;
    Li, R
    ;
    Lee, SJ
    ;
    Li, MF
    ;
    Du, AY
    Schottky-barrier source/drain (S/D) germanium p-channel MOSFETs are demonstrated for the first time with HfAlO gate dielectric, HfN-TaN metal gate and self-aligned NiGe S/D. The drain drivability is improved over the silicon counterpart with PtSi S/D by as much as similar to5 times due to the lower hole Schottky barrier of the NiGe-Ge contact than that of PtSi-Si contact as well as the higher mobility of Ge channel than that of Si.
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    High-performance poly-silicon TFTs incorporating LaAlO3 as the gate dielectric
    (2005-06-01)
    Hung, BF
    ;
    Chiang, KC
    ;
    Huang, CC
    ;
    Chin, A
    ;
    McAlister, SP
    We have integrated a high-κ, LaAlO3 dielectric into low-temperature poly-Si (LTPS) thin-film transistors (TFTs). Good TFT performance was achieved-such as a high drive current, low threshold voltage and subthreshold slope, as well as an excellent on/off current ratio and high gate-dielectric breakdown field. This was achieved without hydrogen passivation or special crystallization steps. The good performance is related to the high gate capacitance density and small equivalent-oxide thickness provided by the high-κ dielectric.