A TaN-HfO2-Ge pMOSFET with novel SiH4 surface passivation

Abstract

In this letter, we demonstrate a novel surface passivation process for HfO2 Ge pMOSFETs using SiH4 surface annealing prior to HfO2 deposition. By using SiH4 passivation, a uniform amorphous interfacial layer is formed after device fabrication. Electrical results show that the HfO2 Ge MOSFET with Si-passivation exhibits less frequency dispersion, narrower gate leakage current distribution, and a similar to 140% higher peak mobility than that of the device with surface nitridation.