標題: | A TaN-HfO2-Ge pMOSFET with novel SiH4 surface passivation |
作者: | Wu, N Zhang, QC Zhu, CX Chan, DSH Du, AY Balasubramanian, N Li, MF Chin, A Sin, JKO Kwong, DL 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | germanium;HfO2;high-kappa;MOSFET;surface passivation |
公開日期: | 1-九月-2004 |
摘要: | In this letter, we demonstrate a novel surface passivation process for HfO2 Ge pMOSFETs using SiH4 surface annealing prior to HfO2 deposition. By using SiH4 passivation, a uniform amorphous interfacial layer is formed after device fabrication. Electrical results show that the HfO2 Ge MOSFET with Si-passivation exhibits less frequency dispersion, narrower gate leakage current distribution, and a similar to 140% higher peak mobility than that of the device with surface nitridation. |
URI: | http://dx.doi.org/10.1109/LED.2004.833842 http://hdl.handle.net/11536/26415 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2004.833842 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 25 |
Issue: | 9 |
起始頁: | 631 |
結束頁: | 633 |
顯示於類別: | 期刊論文 |