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High Performance All Nonmetal SiNx Resistive Random Access Memory with Strong Process Dependence
(2020-02-18)
Yen, Te Jui
;
Chin, Albert
;
Gritsenko, Vladimir
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
All-nonmetal resistive random access memory (RRAM) with a N+-Si/SiNx/P+-Si structure was investigated in this study. The device performance of SiNx developed using physical vapor deposition (PVD) was significantly better than that of a device fabricated using plasma-enhanced chemical vapor deposition (PECVD). The SiNx RRAM device developed using PVD has a large resistance window that is larger than 10(4) and exhibits good endurance to 10(5) cycles under switching pulses of 1 mu s and a retention time of 10(4) s at 85 degrees C. Moreover, the SiNx RRAM device developed using PVD had tighter device-to-device distribution of set and reset voltages than those developed using PECVD. Such tight distribution is crucial to realise a large-size cross-point array and integrate with complementary metal-oxide-semiconductor technology to realise electronic neurons. The high performance of the SiNx RRAM device developed using PVD is attributed to the abundant defects in the PVD dielectric that was supported by the analysed conduction mechanisms obtained from the measured current-voltage characteristics.
Investigation of Microwave Annealing on Resistive Random Access Memory Device with Atmospheric Pressure Plasma Enhanced Chemical Vapor Deposition Deposited IGZO Layer
(2020-07-01)
Wu, Chien-Hung
;
Kuo, Song-Nian
;
Chang, Kow-Ming
;
Chen, Yi-Ming
;
Zhang, Yu-Xin
Non-volatile memory (NVM) is essential in almost every consumer electronic products. The most prevalent NVM used nowadays is flash memory (Meena, J.S., et al., 2014. Overview of emerging nonvolatile memory technologies. Nanoscale Res. Letters, 9(1), p.526). However, some bottlenecks of flash memory have been identified, such as high operation voltage, low operation speed, and poor retention time. Resistive random access memory (RRAM) is considered to be the most promising one to become the next generation NVM device since its simple structure, fast program/erase speed, and low power consumption. In this experiment, the RRAM device is fabricated, and its IGZO (memory) layer is deposited with AP-PECVD technique which can reduce cost of the process. Microwave annealing (MWA) is used to enhance electrical characteristics of the RRAM device (Fuh, C.S., et al., 2011. Role of environmental and annealing conditions on the passivation-free In-Ga-Zn-O TFT. Thin Solid Films, 520, pp.1489-1494). Experiment results show that with appropriate MWA treatment, the IGZO RRAM device exhibits better electrical characteristics under bipolar operation, all forming/set/reset voltage for RRAM device is simultaneously lowered.
Study of Atmospheric-Pressure Plasma Enhanced Chemical Vapor Deposition Fabricated Indium Gallium Zinc Oxide Thin Film Transistors with In-Situ Hydrogen Plasma Treatment
(2020-07-01)
Chen, Yi-Ming
;
Wu, Chien-Hung
;
Chang, Kow-Ming
;
Zhang, Yu-Xin
;
Xu, Ni
Amorphous InGaZnO (a-IGZO) Thin Film Transistors (TFTs) has been studied extensively for their perspective applications in next generation active-matrix displays such as liquid crystal displays and flat-panel displays, due to its better field-effect mobility (>10 cm(2)/V.S), larger I-on/I-off ratio (>10(6)), and better stability electrical. Hydrogen is known as shallow donors for n-type (channel) oxide semiconductors (Dong, J.J., et al. 2010. Effects of hydrogen plasma treatment on the electrical and optical properties of Zno films: Identification of hydrogen donors in ZnO. ACS Appl. Mater. Interfaces, 2, pp.1780-1784), and it is also effective passivator for traps (Tsao, S.W., et al., 2010. Hydrogen-induced improvements in electrical characteristics of a-IGZO thin-film transistors. Solid-State Electron, 54, pp.1497-1499). In this study, In-Situ hydrogen plasma is applied to deposit IGZO channel. With atmospheric-pressure PECVD (AP-PECVD), IGZO thin film can be deposited without vacuum system, large area manufacturing, and cost reducing (Chang, K.M., et al., 2011. Transparent conductive indium-doped zinc oxide films prepared by atmospheric pressure plasma jet. Thin Solid Films, 519, pp.5114-5117). The results show that with appropriate flow ratio of Ar/H-2 plasma treatment, the a-IGZO TFT device exhibits better performance with mobility (mu(FE)) 19.7 cm(2)/V.S, threshold voltage (V-T) 1.18 V, subthreshold swing (SS) 81 mV/decade, and I-on/I-off ratio 5.35 x 10(7).
Reliability of Atmosphere Pressure-Plasma Enhanced Chemical Vapor Deposition Deposited Indium Gallium Zinc Oxide Resistive Random Access Memory Device with Microwave Annealing
(2020-07-01)
Wu, Chien-Hung
;
Kuo, Song-Nian
;
Chang, Kow-Ming
;
Chen, Yi-Ming
;
Zhang, Yu-Xin
Recently resistive random access memory (RRAM) is considered to be the most promising one to become the next generation memory since its simple Metal/Insulator/Metal (MIM) structure, lower power consumption and fabrication cost (Meena, J.S., et al., 2014. Overview of emerging nonvolatile memory technologies. Nanoscale Research Letters, 9(1), p.526). Due to some bottlenecks for current flash memory such as high operation voltage, low operation speed, poor retention time and endurance, RRAM device is regarded as an alternative solution (Fuh, C.S., et al., 2011. Role of environmental and annealing conditions on the passivation-free In-Ga-Zn-O TFT. Thin Solid Films, 520, pp.1489-1494). In this investigation, the memory layer of RRAM device is IGZO, and it is deposited with AP-PECVD technique which can operate under atmosphere, reduce cost of the process. Microwave annealing (MWA) is used to enhance the RRAM device reliability (Fuh, C.S., et al., 2011. Role of environmental and annealing conditions on the passivation-free In-Ga-Zn-O TFT. Thin Solid Films, 520, pp.1489-1494). Experiment shows that with appropriate MWA treatment, the IGZO RRAM device exhibits better electrical characteristics, reliability issues such as numbers of switching cycle and data retention time are also improved (Teng, L.F., et al., 2012. Effects of microwave annealing on electrical enhancement of amorphous oxide semiconductor thin film transistor.
Trapping and Detrapping of Oxide Border Traps in Al2O3 Gate Dielectric in MOS2 n-MOSFETs under PBTI Stress
(2016-01-01)
Yuan, Hui-Wen
;
Shen, Hui
;
Li, Jun-Jie
;
Shao, Jinhai
;
Huang, Daming
In this paper, we report the positive bias temperature instability (PBTI) effects of the back-gated MoS2 n-MOSFET with A1203 gate dielectric. Multilayer MoS2 was used and all measurements are carried in vacuum to avoid the electric signal contamination by the top MoS2 surface water or oxygen molecules absorption. In the stress phase, the Id-Vg curve shifts to the positive gate bias direction. In the recovery phase, the Id-Vg shifts back completely to the fresh device curve. This indicates that voltage shift is purely due to trapping or detrapping of the oxide border traps at the MoS2/A1203 interface and no new traps are generated during the stress time. When applying different stress voltage and measuring the Id-Vg shift, we can calculate the oxide border trap energy density 17(E), which has a peak value of 6x 1013cm-2eV-1 at 0.035eV above Ec of MoS2 conduction band.
Ferroelectric, Small Bandgap and Wide Bandgap Materials for Ultra-Low Power Green Electronic Devices
(2016-01-01)
Chin, Albert
;
Shih, Cheng W.
;
Kan, Kai-Zhi
;
Chen, Tim
;
電子工程學系及電子研究所
The power consumption in electronic devices is the major challenge as increasing the demand of IC chips. To lower the V-DD and AC power (P-AC), both high mobility material and steep turn-on device technology are useful. The ferroelectric high-K HfZrO MOSFET can realize not only a small sub-threshold slope (SS) < 60 mV/dec for low V-DD and P-AC, but also a smaller aspect ratio FinFET. The small bandgap (E-G) Ge pMOSFET can lower the P-AC by 4 times due to its 2x higher field-effective mobility at half effective field. The high-mobility wide E-G GaN MOSFET is a candidate to lower the direct tunneling leakage current and DC power (P-DC) by orders of magnitude in future deep X-nm device. The ferroelectric high-kappa HtZrO MOSFET can also perform DRAM function with lower P-DC than existing DRAM.
Low-Temperature Processed Tin Oxide Transistor With Ultraviolet Irradiation
(2019-06-01)
Shih, Cheng Wei
;
Yen, Te Jui
;
Chin, Albert
;
Lu, Chun Fu
;
Su, Wei Fang
Using a novel ultraviolet (UV) irradiation method, we processed a high-performance thin-film transistor (TFT) at low temperatures. Satisfactory device integrity that was demonstrated by high field-effect mobility values of 92 and 43 cm(2)/Vs, small subthreshold slopes of 74 and 81 mV/decade, and ON-current/OFF-current values of 3 x 10(6) and 7 x 10(5) was achieved for the SnO2 TFT at low processing temperatures of 180 degrees C and 100 degrees C, respectively. The results of X-ray photoelectron spectroscopy showed that the UV irradiation considerably increased the presence of Sn4+ and reduced the presence of unwanted Sn2+, even at low processing temperatures, improving the quality of SnO2.
Forming-Free SiGeOx/TiOy Resistive Random Access Memories Featuring Large Current Distribution Windows
(2019-12-01)
Cheng, Chun-Hu
;
Chin, Albert
;
Hsu, Hsiao-Hsuan
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Optimal device integrity was achieved in Ni/SiGeOx/TiOy/TaN resistive memory by using a formingfree switch with a low switching power of 790 mu W, stable endurance of 10(4) cycles, optimal retention time of 10(5) s, resistance window of at least 1150x, and tight current distributions at 85 degrees C. These characteristics are attributed to the low current switching obtained using SiGeOx with a high oxygen vacancy density and highly defective TiOy grain boundaries.
All Nonmetal Resistive Random Access Memory
(2019-04-16)
Yen, Te Jui
;
Gismatulin, Andrei
;
Volodin, Vladimir
;
Gritsenko, Vladimir
;
Chin, Albert
Traditional Resistive Random Access Memory (RRAM) is a metal-insulator-metal (MIM) structure, in which metal oxide is usually used as an insulator. The charge transport mechanism of traditional RRAM is attributed to a metallic filament inside the RRAM. In this paper, we demonstrated a novel RRAM device with no metal inside. The N+-Si/SiOx/P+-Si combination forms a N+IP+ diode structure that is different from traditional MIM RRAM. A large high-resistance/low-resistance window of 1.9 x 10(4) was measured at room temperature. A favorable retention memory window of 1.2 x 10(3) was attained for 10(4)s at 85 degrees C. The charge transport mechanism of virgin, high- and low-resistance states can be well modeled by the single Shklovskii-Efros percolation mechanism rather than the charge transport in metallic filament. X-ray photoelectron spectroscopy demonstrated that the value of x in SiOx was 0.62, which provided sufficient oxygen vacancies for set/reset RRAM functions.
Remarkably high mobility ultrathin-film metal-oxide transistor with strongly overlapped orbitals
(2016-01-08)
Shih, Chen Wei
;
Chin, Albert
;
Lu, Chun Fu
;
Su, Wei Fang
;
電子工程學系及電子研究所
High mobility channel thin-film-transistor (TFT) is crucial for both display and future generation integrated circuit. We report a new metal-oxide TFT that has an ultra-thin 4.5 nm SnO2 thickness for both active channel and source-drain regions, very high 147 cm(2)/Vs field-effect mobility, high I-ON/I-OFF of 2.3 x 10(7), small 110 mV/dec sub-threshold slope, and a low V-D of 2.5V for low power operation. This mobility is already better than chemical-vapor-deposition grown multi-layers MoS2 TFT. From first principle quantum-mechanical calculation, the high mobility TFT is due to strongly overlapped orbitals.

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