<link rel="stylesheet" href="styles.cf390c6bfbe7555f.css">

學術出版;;Publications

Permanent URI for this communityhdl:11536/1

收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

Browse

🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Chu, JTSubject: search.filters.subject.laser diodes

Search Results

Now showing 1 - 4 of 4
  • Thumbnail Image
    Item type:Item,
    InP/InGaAlAs distributed Bragg reflectors grown by low-pressure metal organic chemical vapor deposition
    (2003-04-01)
    Lu, TC
    ;
    Tsai, JY
    ;
    Chu, JT
    ;
    Chang, YS
    ;
    Wang, SC
    Long-wavelength vertical cavity surface emitting lasers (VCSELs) are considered the best candidate for the future low-cost reliable light sources in fiber communications. However, the absence of high refractive index contrast in InP-lattice-matched materials impeded the development of 1.3-1.5 mum VCSELs. Although wafer fusions provided the alternative approaches to integrate the InP-based gain materials with the GaAs/AlAs materials for their inherent high refractive index contrast, the monolithic InP-based lattice-matched distributed Bragg reflectors (DBRs) are still highly attractive and desirable. In this report, we demonstrate InP/InGaAlAs DBRs with. larger refractive index contrast than InP/InGaAsP and InAlAs/InGaAlAs DBRs. The switching between InP and InGaAlAs layers and growth rate control have been done by careful growth interruption technique and accurate in situ optical monitoring in low-pressure metal organic chemical vapor deposition. A 35 pairs 1.55 mum centered InP/InGaAlAs DBRs has the stopband of more than 100 nut and the highest reflectivity of more than 99%. A VCSEL structure incorporating 3 5 pairs InP/InGaAlAs DBR as the bottom mirror combined with a 2lambda thick periodic gain cavity and 10 pairs SiO2/TiO2 top dielectric mirrors was fabricated. The VCSELs lased at 1.56 mum by optical pumping at room temperature with the threshold pumping power of 30 mW. (C) 2002 Elsevier Science B.V. All rights reserved.
  • Thumbnail Image
    Item type:Item,
    Single-mode 1.27-mu m InGaAs : Sb-GaAs-GaAsP quantum well vertical cavity surface emitting lasers
    (2005-01-01)
    Kuo, HC
    ;
    Chang, YH
    ;
    Chang, YA
    ;
    Lai, FI
    ;
    Chu, JT
    The 1.27-mum InGaAs:Sb-GaAs-GaAsP vertical cavity surface emitting lasers (VCSELs) were grown by metalorganic chemical vapor deposition and exhibited excellent performance and temperature stability. The threshold current varies from 1.8 to 1.1 mA and the slope efficiency falls less than similar to35% from 0.17 to 0.11 mW/mA as the temperature is raised from room temperature to 75 degreesC. The VCSELs continuously operate up to 105 degreesC with a slope efficiency of 0.023 mW/mA. With a bias current of only 5 mA, the 3-dB modulation frequency response was measured to be 8.36 GHz, which is appropriate for 10-Gb/s operation. The maximal bandwidth is estimated to be 10.7 GHz(1/2) with modulation current efficiency factor of similar to5.25 GHz/(mA)(1/2). These VCSELs also demonstrate high-speed modulation up to 10 Gb/s from 25degreesC to 70degreesC. We also accumulated life test data up to 1000 h at 70degreesC/10 mA.
  • Thumbnail Image
    Item type:Item,
    10 Gbps InGaAs : Sb-G-aAs-GaAsP quantum well vertical cavity surface emitting lasers with 1.27 mu m emission wavelengths
    (2005-04-01)
    Chang, YH
    ;
    Kuo, HC
    ;
    Chang, YA
    ;
    Chu, JT
    ;
    Tsai, MY
    InGaAs:Sb-GaAs-GaAsP vertical cavity surface emitting lasers (VCSELs) with 1.27 mu m emission wavelength were grown by metal-organic chemical vapor deposition (MOCVD) and exhibited excellent performance and temperature stability. The threshold current changes from 1.8 to 1.1 mA and the slope efficiency falls less than similar to 35% as the temperature is increased from room temperature to 70 degrees C. With a bias current of only 5 mA, the 3 dB modulation frequency response was measured to be 8.36GHz, which is appropriate for 10Gb/s operation. The maximal bandwidth is measured to be 10.7GHz With a modulation current efficiency factor (MCEF) of similar to 5.25 GHz/(mA) 1/2. Bit error rates of less than 10(-12) are demonstrated for 10 Gb/s data transmission from 25 degrees C to 70'C. We also accumulated life test data up to 1000 h at 70 degrees C/10 mA.
  • Thumbnail Image
    Item type:Item,
    MOCVD growth of highly strained 1.3 mu m InGaAs : Sb/GaAs vertical cavity surface emitting laser
    (2006-01-25)
    Chang, YA
    ;
    Chu, JT
    ;
    Ko, CT
    ;
    Kuo, HC
    ;
    Lin, CF
    In0.45Ga0.55As:Sb/GaAs (1.3 mu m) vertical cavity surface emitting lasers (VCSELs) were grown by metalorganic chemical vapor deposition (MOCVD). A In0.45Ga0.55As:Sb/GaAs quantum well (QW) exhibited an emission wavelength of 1.26 mu m with narrow fullwidth at half-maximum (FWHM) of 35.9meV. For the fabricated VCSEL with 5 mu m diameter oxide-confined aperture, a room-temperature (RT).threshold current of 2.1 mA and an output power of 0.9 mW with 1.3 mu m emission were obtained. The 3 dB modulation frequency was measured to be 7.6 GHz. (c) 2005 Elsevier B.V. All rights reserved.