學術出版;;Publications

Permanent URI for this communityhdl:11536/1

收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

Browse

🏛️國立陽明交通大學機構典藏

Search Results

Now showing 1 - 8 of 8

Effect of Field Plate on the RF Performance of AlGaN/GaN HEMT Devices
(2012-01-01)
Chiang, Che-Yang
;
Hsu, Heng-Tung
;
Chang, Edward Yi
;
材料科學與工程學系
;
Department of Materials Science and Engineering
This paper examines the effect of the field plate structure on the RF performance of AlGaN/GaN High Electron Mobility Transistor (HEMT) devices. While the field plate structure helps to increase the breakdown voltage of the device through modulating the electric field locally, it induces additional feedback capacitance from drain to gate. Such feedback capacitors may impact the overall RF performance of the device especially at high frequencies. Systematic investigations on the small signal as well as power performance as functions of the drain biases are presented. (C) 2011 Published by Elsevier B.V. Selection and/or peer-review under responsibility of Garry Lee
Effect of AlN Spacer on the AlGaN/GaN HEMT Device Performance at Millimeter-wave Frequencies
(2018-01-01)
Wang, Chun
;
Hsu, Heng-Tung
;
Huang, Ting-Jui
;
Fan, Jun-Kai
;
Chang, Edward Yi
The effect of the AlN spacer on the performance of AlGaN/GaN HEMT devices at 38 GHz is experimentally investigated. The measurement results revealed that the device with spacer showed superior performance in terms of the maximum drain current. RF wise, substantial improvement in the cut-off frequency and the maximum oscillation frequency was also observed for devices with spacer. A saturated output power density of 4.21 W/mm with 35.02% power-added efficiency (PAE) at 38 GHz were achieved for device with 70nm gate length.
Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs Using Active-Region Bumps-Induced Piezoelectric Effect
(2014-07-01)
Tsai, Szu-Ping
;
Hsu, Heng-Tung
;
Chiang, Che-Yang
;
Tu, Yung-Yi
;
Chang, Chia-Hua
We experimentally investigated the impact of different bump patterns on the output electrical characteristics of flip-chip (FC) bonded AlGaN/GaN high-electron mobility transistors in this letter. The bump patterns were designed and intended to provide different levels of tensile stress due to the mismatch in the coefficient of thermal expansion between the materials. After FC packaging, a maximum increase of 4.3% in saturation current was achieved compared with the bare die when proper arrangement of the bumps in active region was designed. In other words, a 17% improvement has been observed on the optimized bump pattern over the conventional bump pattern. To the best of our knowledge, this is the first letter that investigates the piezoelectric effect induced by FC bumps leading to the enhancement in device characteristics after packaging.
AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications
(2016-11)
Lin, Yen-Ku
;
Noda, Shuichi
;
Lo, Hsiao-Chieh
;
Liu, Shih-Chien
;
Wu, Chia-Hsun
The electrical performances of gate-recessed AlGaN/GaN high-electron mobility transistors (HEMTs) fabricated using the damage-free neutral beam etching (NBE) method are demonstrated. The NBE method could eliminate the plasma-induced defects generated by irradiating ultraviolet/VUV photons in the conventional inductively coupled plasma reactive ion etching method. The AlGaN/GaN HEMT device fabricated using the new gate recess process exhibited superior electrical performances, including a maximum drain current density (I-DS,I-max) of 1.54 A/mm, low 1/f noise, a current-gain cutoff frequency (f(T)) of 153 GHz, a maximum frequency of oscillation (f(MAX)) of 167 GHz, and a minimum noise figure (NFmin) of 3.28 dB with an associated gain (G(AS)) of 5.06 dB at 54 GHz. Such superior characteristics confirm the inherent advantages of adopting the damage-free NBE process in fabricating GaN devices for millimeter-wave applications.
Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs by Strain Engineering Design
(2016-10)
Tsai, Szu-Ping
;
Hsu, Heng-Tung
;
Wuerfl, Joachim
;
Chang, Edward Yi
;
材料科學與工程學系
The piezoelectric polarization of the AlGaN/GaN high-electron-mobility transistors (HEMTs) is strongly related to the strain state in the active area. Therefore, understanding the strain behavior inside the channel is crucial to the device electrical performance improvement of devices. This paper, for the first time, reveals the potential of optimizing flip-chip structures with active-region bumps to modulate the strain state of the AlGaN/GaN HEMT for enhancing the piezoelectric effect. The thermo-mechanical strain is observed to be affected by the physical dimensions and the material properties of the package. Thus, incorporating device strain engineering into packaging design will be very important for GaN devices due to their strong piezoelectric effects.
Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs Using Active-Region Bumps-Induced Piezoelectric Effect
(2014-07-01)
Tsai, Szu-Ping
;
Hsu, Heng-Tung
;
Chiang, Che-Yang
;
Tu, Yung-Yi
;
Chang, Chia-Hua
We experimentally investigated the impact of different bump patterns on the output electrical characteristics of flip-chip (FC) bonded AlGaN/GaN high-electron mobility transistors in this letter. The bump patterns were designed and intended to provide different levels of tensile stress due to the mismatch in the coefficient of thermal expansion between the materials. After FC packaging, a maximum increase of 4.3% in saturation current was achieved compared with the bare die when proper arrangement of the bumps in active region was designed. In other words, a 17% improvement has been observed on the optimized bump pattern over the conventional bump pattern. To the best of our knowledge, this is the first letter that investigates the piezoelectric effect induced by FC bumps leading to the enhancement in device characteristics after packaging.
Fabrication of AlGaN/GaN High Electron Mobility Transistors (HEMTs) on Silicon Substrate with Slant Field Plates Using Deep-UV Lithography Featuring 5W/mm Power Density at X-band
(2012)
Chang, Chia-Hua
;
Hsu, Heng-Tung
;
Huang, Lu-Che
;
Chiang, Che-Yang
;
Chang, Edward Yi
In this work, AlGaN/GaN HEMTs on silicon with slant field platehave been successfully fabricated using deep-UV lithography. By using an angle exposure technique, submicron T-shaped gates with slant sidewalls were achieved. The 0.6 x 100 mu m(2) slant-field-plated AlGaN/GaN HEMT on silicon substrate exhibited a peak value of transconductance of 214 mS/mm and a breakdown voltage of 122 V. Through high-frequency measurements, the device revealed a current gain cutoff frequency (f(T)) of 24 GHz, a maximum oscillation frequency (f(max)) of 49 GHz and an output power density of 5.0 W/mm at X-band.
30-GHz Low-Noise Performance of 100-nm-Gate-Recessed n-GaN/AlGaN/GaN HEMTs
(2010-02-01)
Chang, Chia-Ta
;
Hsu, Heng-Tung
;
Chang, Edward Yi
;
Kuo, Chien-I
;
Huang, Jui-Chien
We demonstrate a 100-nm-gate-recessed n-GaN/AlGaN/GaN high-electron mobility transistor (HEMT) with low-noise properties at 30 GHz. The recessed GaN HEMT exhibits a low ohmic-contact resistance of 0.28 Omega . mm and a low gate leakage current of 0.9 mu A/mm when biased at V(GS) = -3 V and V(DS) = 10 V. At the same bias point, a minimum noise figure of 1.6 dB at 30 GHz and an associated gain of 5 dB were achieved. To the best of our knowledge, this is the best noise performance reported at 30 GHz for gate-recessed AlGaN/GaN HEMTs.

學術出版;;Publications

Browse

Filters

Settings

Sort By

Results per page

🏛️國立陽明交通大學機構典藏

Search Results