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40 nm-CMOS W-band Phase Shifter for Millimeter-wave Phased Array
(2019-01-01)
Huang, Ching-Ying
;
Hsieh, Kuan-Han
;
Hu, Robert
;
電機學院
;
College of Electrical and Computer Engineering
With its low attenuation and high directivity, the 77 similar to 110 GHz (W-band) frequency range is suitable for long-distance broadband applications. Although only 77 GHz and 94 GHz have been used for vehicular radar and military surveillance so far, the W-band spectra is destined to play an even important role in the post-5G era. This manuscript describes our development on the 40 nm-CMOS W-band phase shifter design where 5 bits are used for phase shift of 11.25 degrees while additional 4-bit logics are for fine-tuning purpose. The input signal is first be amplified by a wideband amplifier and then transformed through poly-phase circuit into I/Q signals, whose magnitude will then be altered by the following digital VGAs. By making the vector sum at the output, phase shifting in the range of 0 degrees similar to 360 degrees can be obtained and the resolution is 11.25 degrees.
Analysis and design of wideband active power splitter with interleaf transmission line topology
(2019-11-01)
Huang, Ching-Ying
;
Hu, Robert
;
Niu, Dow-Chi
;
Chang, Chi-Yang
;
電機學院
This article proposes a new wideband active power splitter design where the gain cells along the input transmission line are arranged in interleaf rather than the conventional parallel style, thus the circuit's high-frequency performance can be greatly improved. Both theoretical analysis and circuit simulation have been carried out; as a demonstration, parallel and interleaf active power splitters are designed using 0.1 mu m GaAs pseudo-morphic heterostructure field effect transistors (GaAs pHEMT) process and measured on-wafer. The results clearly indicate the superiority of the interleaf topology. A 40 GHz interleaf active power splitter in 90 nm complementary metal-oxide-semiconductor (CMOS) is then presented where the magnitude and phase imbalance between the two output ports are 0.15 dB and 2.6 degrees at 20 GHz, and 0.16 dB and 14 degrees at 40 GHz. The output-port isolation is better than 30 dB across the whole frequency range.
IL analysis for 8-way power combining network in 77-110 GHz 40 nm-complementary metal-oxide-semiconductor PA design
(2019-11-01)
Huang, Ching-Ying
;
Wu, Pin-Hsuan
;
Wu, Kun-Long
;
Hu, Robert
;
Chang, Chi-Yang
In this study, the authors will investigate the insertion loss (IL) of the broadband 8-way power combiner used in their millimetre-wave power amplifier (PA) design. By treating this combiner as impedance transformer under resistor-capacitor (RC)-loading condition, both the characteristic impedance and electrical length of the constituting metal lines can be obtained, where the much shorter line length suggests wider bandwidth and lower IL. However, proper loss analysis must take into account the multi-reflection of voltage wave along these mismatched transmission lines, i.e. the use of the power attenuation expression ${\rm e}<^>{ - 2\alpha L}$e-2 alpha L is just not accurate enough. With their derived equations, it shows that the IL of their proposed 8-way combiner can be as low as 0.92 dB at 94 GHz, which is much smaller than the 1.5 dB for the conventional quarter-wavelength combiner. Mathematics for the IL of the drain-bias shunt stub and the output DC-blocking capacitor has also been derived. As a demonstration, a 77-110 GHz 40 nm-complementary metal-oxide-semiconductor PA made of cascode transistors is then designed that has more than 18 dB gain, and its OP1 dB is around 13 dBm across the whole frequency range.
Analysis of wide-IF-band 65 nm-CMOS mixer for 77-110 GHz radio-astronomical receiver design
(2019-05-01)
Huang, Ching-Ying
;
Wu, Kun-Long
;
Hu, Robert
;
Chang, Chi-Yang
;
電子工程學系及電子研究所
This manuscript presents the design of a W-band receiver in which an radio frequency-low noise amplifier (RF-LNA), a wideband mixer, intermediate frequency (IF) amplification, a local oscillator frequency (LO) tripler and a driving amplifier are all integrated into one single chip of 1050 x 820 mu m(2). To effectively extend the mixer's IF bandwidth while retaining its conversion gain, impacts of the mixing transistor's drain bias and output loading impedance are explored using a dual-modulation conversion-matrix method, which allows both the LO-induced transconductance modulation and channel-conductance modulation to be considered simultaneously. It is shown that, by merging the input capacitance of the IF amplifier into a high-impedance artificial transmission line, an actively biased mixer can have constant conversion gain over broad bandwidth. A 77-110 GHz 65 nm-complementary metal-oxide-semiconductor (CMOS) receiver with 33 GHz IF bandwidth is then designed and measured. Its conversion gain and noise figure are 10 and 20 dB, respectively, and the input-referred P1 dB is -15 dBm; the overall power consumption is 330 mW under 1.3 V drain bias.
Cryogenic analog-to-digital converters using spread spectrum technology for coherent receivers
(2012-01-01)
Shiao, Yu-Shao Jerry
;
Chiueh, Tzihong
;
Hu, Robert
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
We propose analog-to-digital converters (ADCs) using spread spectrum technology in cryogenic receivers or at warm room temperature for coherent receiver backend systems. As receiver signals are processed and stored digitally, ADCs play a critical role in backend read-out systems. To minimize signal distortion, the down-converted signals should be digitized without further transportation. However, digitizing the signals in or near receivers may cause radio frequency interference. We suggest that spread spectrum technology can reduce the interference significantly. Moreover, cryogenic ADCs at regulated temperature in receiver dewars may also increase the bandwidth usage and simplify the backend digital signal process with fewer temperature-dependant components. While industrial semiconductor technology continuously reduces transistor power consumption, low power high speed cryogenic ADCs may become a better solution for coherent receivers. To examine the performance of cooled ADCs, first, we design 4 bit 65 nm and 40 nm CMOS ADCs specifically at 10 K temperature, which commonly is the second stage temperature in dewars. While the development of 65 nm and 40 nm CMOS ADCs are still on-going, we estimate the ENOB is 2.4 at 10 GSPS, corresponding to the correlation efficiency, 0.87. The power consumption is less than 20 mW.
Ultra-broadband IF/LO system of NTU W-band interferometer array
(2010-01-01)
Teng, Hsiao-Feng
;
Wu, Jing-Cheng
;
Li, Huan-Hsin
;
Chiueh, Tzi-Hong
;
Niu, Dou-Chih
NTU-Array is designed for W-band (78-113Ghz) interferometric observations of Sunyaev-Zeldovich effects. The first phase operation of the telescope with 6 receivers had its first light in 2008 with single-polarization and half the full bandwidth. The second-phase operation of NTU-Array in Nevada will begin the dual-polarization, full-band observation in 2010. One-bit sampling at 18Ghz and digital correlation are in use in this telescope. Due to the ultra broadband coverage, the IF system divides the 35GHz full-band into four 8.7GHz sub-bands. The first stage of IF module containing a 35GHz broadband amplifier with fairly flat-gain performance over 25db gain divides the first-stage IF into two outputs. The 2nd-stage IF module further divides the two input IF signals and down-converts them to four basebands of DC-8.7Ghz. An LO module with 8.7Ghz input is to generate outputs with x2, x3 and x9 harmonics for the down-conversion. The Walsh function is injected into the x9 LO via an IQ mixer. Each IF baseband is transmitted through an optical link to the 18Ghz, 1-bit sampling ADC located in the control room. The analog optical link contains a driver and equalizer to compensate for the path loss. Considering the limited size of the telescope mount, the entire IF/LO system of each receiver has a compact size about 20cm cubed. This physical size can be further reduced to fit the future 19-pixel-receiver upgrade of NTU-Array
33 similar to 50GHz CMOS Receiver with Wideband RF, IF and LO Chain
(2017-01-01)
Huang, Ching-Ying
;
Wu, Kung-Long
;
Hu, Robert
;
Chang, Chi-Yang
;
電子工程學系及電子研究所
This manuscript describes the Q-band 90nmCMOS receiver design where the 33 similar to 50GHz RF-LNA, actively-biased double-balanced mixer, 10GHz IF amplifier, wideband frequency tripler and power amplifier in the LO chain are all integrated into one single chip. With overall power consumption of 170mW under 1.2V bias, the measured conversion gain is 15dB, noise figure close to 8dB, inputreferred P1dB around -30dBm, and the LO-IF port isolation is more than 60dB. Therefore, it can be easily driven by an external 11 similar to 16GHz signal source and used in applications such as next-generation broadband mobile communications where several specific Q-band frequency points have been considered. However, contrary to most receiver designs where the optimization is carried out over a relatively narrow bandwidth, here the main challenge lies in how to effectively extend the RF, IF, and LO bandwidth simultaneously without rendering performance deterioration. By possessing such broadband RF, IF, and LO characteristics, this Q-band circuit is also eligible for use in radio-astronomical, atmospheric, and other scientific instrumentations.
A 34-42GHz Single-Side-Band Transmitter with Switchable VCO/PLL in 90nm-CMOS Process
(2017-01-01)
Huang, Ching-Ying
;
Wu, Kun-Long
;
Hu, Robert
;
Chang, Chi-Yang
;
電子工程學系及電子研究所
This manuscript describes a 34-42GHz single-sideband 90nm-CMOS transmitter where PLL has been integrated into the LO chain and, with I/Q input and two-stage up-conversion, a 30dB image-rejection ratio is achieved within the intended bandwidth. This transmitter's wideband tuning range is made possible by the use of additional capacitor on the VCO, and the phase noise of the resulting RF output is in the range of -70 to -90dBc/Hz at 1MHz, and all below 100dBc/Hz at 10MHz. The circuit's IF-to-RF conversion gain is 30dB, with saturated output power around 5dBm, and the total power consumption is 260mW. Through the control of the power amplifier's drain bias, a 50dB power level difference can be obtained, thus allows signal modulation and further combination with the receiver. This 1100x650um(2) transmitter can be used as a prototypical circuit to explore next-generation mobile communication and civilian radar array systems.
OMMIC 70nm-mHEMT LNA Design
(2017-01-01)
Chen, Ying
;
Wu, Kun-Long
;
Huang, Ching-Ying
;
Chang, Che-Kun
;
Sun, Xin
This paper describes our progress in the design of cryogenic LNAs using OMMIC 70nm mHEMT for the Square Kilometer-Array (SKA) project and the Shanghai 65-Meter radio astronomical telescope. Different LNAs covering the aggregate 1 similar to 40GHz frequency range are designed and measured on-wafer at room temperature, and T-n for the 1 similar to 10, 5 similar to 15, and 10 similar to 40GHz LNAs are 80K, 90K, and 120K, respectively, with the gain all larger than 20dB. One 1 similar to 10GHz LNA chip is then packaged and tested cryogenically, and the noise temperature improvement factor is 6 similar to 8, which is smaller than what can be obtained from the WIN pHEMT. Performance repeatability among different chips has been carried out.
Design of 18 similar to 26GHz Receiver with Wideband RF, LO and IF in 0.15 mu m GaAs pHEMT Process
(2017-01-01)
Chen, Ying
;
Yu, Zhong-I
;
Huang, Ching-Ying
;
Hsieh, Kuan-Han
;
Hu, Robert
This paper describes our progress in designing the K-band receiver in WIN 0.15 mu m GaAs pHEMT process. The LNA contains three stages of common-source transistors, and its noise performance has been optimized over the intended bandwidth; the following mixer is made of single-balanced transistors where the edge-coupled Marchand balun provides the required 18 similar to 26GHz differential-mode LO while active balun is used for combining the 8GHz IF signals. The conversion gain measured on-wafer at room temperature is around 20dB and the noise temperature is close to 300K, with overall power consumption 140mW, and the chip area is 1000x2500 mu m(2.) A close inspection on the wide-IF-band noise measurement procedure is also provided where the impact of conversion gain on the measured T-n is explored. This receiver circuit will facilitate the construction of large focal plane arrays where compact cryogenic receiver module is in urgent demand.

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