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Direct oxidation of Si1-xGex layers using Vacuum-Ultra-Violet light radiation in oxygen
(1998-02-01)
Chen, LP
;
Chan, YC
;
Chang, SJ
;
Huang, GW
;
Chang, CY
Oxidation of Si1-xGex films has been carried out by direct photo chemical Vapor deposition (direct photo-CVD) directly with activated O-2 induced by Vacuum-Ultra-Violet (VUV) light radiation, The Auger electron spectroscopy profiles show that no Ge-pileup layer at the oxide/Si1-xGex interface is observed after VUV-induced Si1-xGex oxidation process. The X-ray photoelectron spectroscopy analysis of the samples reveals that Si and Ge are oxidized simultaneously in oxidation process and a mixed oxide layer consisting both SiO2 and GeO2 is formed, This might be the reason that Cc pileup effect is eliminated in this study.
Direct oxidation of Si1-xGex layers using Vacuum-Ultra-Violet light radiation in oxygen
(1998-02-01)
Chen, LP
;
Chan, YC
;
Chang, SJ
;
Huang, GW
;
Chang, CY
Oxidation of Si1-xGex films has been carried out by direct photo chemical Vapor deposition (direct photo-CVD) directly with activated O-2 induced by Vacuum-Ultra-Violet (VUV) light radiation, The Auger electron spectroscopy profiles show that no Ge-pileup layer at the oxide/Si1-xGex interface is observed after VUV-induced Si1-xGex oxidation process. The X-ray photoelectron spectroscopy analysis of the samples reveals that Si and Ge are oxidized simultaneously in oxidation process and a mixed oxide layer consisting both SiO2 and GeO2 is formed, This might be the reason that Cc pileup effect is eliminated in this study.
CMOS RFIC: Application to wireless transceiver design
(2000-02-01)
Wen, KA
;
Wuen, WS
;
Huang, GW
;
Chen, LP
;
Chen, KY
There is increasing interest using CMOS circuits for highly integrated high frequency wireless telecommunications systems. This paper reviews recent works in transceiver architectures, circuits and devices technology for CMOS RFIC application. A number of practical problems those must be resolved in CMOS RFIC design are also discussed.
Deposition of polycrystalline Si and SiGe by ultra-high vacuum chemical molecular epitaxy
(2000-07-01)
Chen, KM
;
Huang, HJ
;
Chang, CY
;
Chen, LP
;
Huang, GW
The polycrystalline Si1-xGex (poly-Si1-xGex) films have better properties than poly-Si for device fabrications, such as lower proceeding temperature and process thermal budget. For these reasons, the poly-Si1-xGex films have been utilized for low-temperature thin film transistor fabrications and gate electrodes of metal-oxide-semiconductor transistors. In this work, disilane and germane were used to grow poly-Si1-xGex films at low temperature (<600 degrees C) by the cold-wall type ultrahigh vacuum chemical molecular epitaxy system. The poly-Si1-xGex films were deposited on oxide and nitride surfaces. The Ge fraction x was evaluated from x-ray diffraction and Auger electron spectroscopy. It is observed that the Ge fraction increases with the increase of the GeH4 flow rate. The result is only slightly related to the substrate type. The growth rate increases with the Ge fraction at lower values and then decreases with the Ge fraction in the higher composition range. This implies that the growth mechanism of poly-Si1-xGex films is different from that of epitaxial Si1-xGex on Si. The uniformity of poly-Si1-xGex films depends on the Ge fraction, and it is improved-by the addition of germanium. The result can be explained by the lower activation energy (<0.25 eV) of poly-Si(1-x)G(x), deposition as compared to that of poly-Si (similar to 2.1 eV). From the x-ray diffraction and atomic force microscopy analyses, the crystallinity and surface roughness of films are suitable for device fabrications. (C) 2000 American Vacuum Society. [S0734-2101(00)07704-6].
Study of boron effects on the reaction of Co and Si1-xGex at various temperatures
(2000-07-01)
Huang, HJ
;
Chen, KM
;
Chang, CY
;
Huang, TY
;
Chang, TC
The effects of boron on Co and Si1-xGex interfacial reaction were studied. Undoped and ill situ boron-doped strained Si0.91Ge0.09 and Si0.86Ge0.14 layers prepared at 550 degrees C by an ultrahigh vacuum chemical vapor deposition system were subjected to Co silicidation at various rapid thermal annealing (RTA) temperatures ranging from 500 to 1000 degrees C. The resulting films were characterized by a sheet resistance measurement, Auger electron spectroscopy, x-ray diffractometry (XRD), high resolution x-ray diffractometry, secondary ion mass spectroscopy, scanning electron microscopy, and transmission electron microscopy. Seen from XRD spectroscopy, a Co(Si1-yGey) cubic structure was formed with RTAs ranging from 500 to 700 degrees C. For boron-doped samples, the CoGe fraction in Co(Si1-yGey) was less than that in undoped samples, indicating that baron atoms retarded the incorporation of Ge into the Co(Si1-yGey) ternary phase. It also led to a large Ge pileup at the interface between the Co-rich and silicidation regions. On the other hand, from the high resolution x-ray spectra, the presence of boron led to less relaxation of the strained Si1-xGex lattice. It is the first time that small boron atoms inhibiting the relaxation of the Si1-xGex layer during silicidation was observed. Furthermore, from the sheet resistance measurement, the formation of CoSi2 was found to be slightly retarded in boron-doped samples, due probably to the decrease of Co or Si diffusivities as a result of boron accumulation at the Co/SiGe reaction interface. At temperatures above 800 degrees C, CoSi2 formed and Ge segregated to the silicide boundaries and the upper reaction region was discovered. These phenomena caused by B dopants are explained in detail. (C) 2000 American Vacuum Society. [S0734-2101(00)04604-2].
Effect of coplanar probe pad design on noise figures of 0.35 mu m MOSFETs
(2000-07-20)
Su, CY
;
Chen, LP
;
Chang, SJ
;
Huang, GW
;
Ho, YP
The effects of different coplanar ground-signal-ground (GSG) probe pads on the noise figure characteristics of submicron MOSFETs are presented. Devices with top-level metal as probe pads shielded by grounded bottom-level metal possess the most appropriate probe pad structure for characterising the noise performance of MOSFETs. Equivalent circuits of the probe pads are used to explain the different noise behaviours.
Study on Ge/Si ratio, silicidation, and strain relaxation of high temperature sputtered Co/Si1-xGex structures
(2000-08-15)
Huang, HJ
;
Chen, KM
;
Chang, CY
;
Huang, TY
;
Chen, LP
As the transistors continue to scale down, the characteristics of high-temperature-sputtered Co/Si1-xGex junction have received lots of attention because of its potential applications to heterojunction bipolar transistors. In this study, we have fabricated Co/Si1-xGex junction using room-temperature and high-temperature (i.e., at 450 degrees C) sputtered Co on top of strained Si0.86Ge0.14 and Si0.91Ge0.09 layers prepared by ultrahigh vacuum chemical molecular epitaxy. The relative composition of Ge in Ge-rich Si1-zGez precipitate and the solid solution of ternary phase silicide of Co-Si-Ge system were compared between room-temperature and high-temperature sputtered samples. We found that the high-temperature-sputtered samples are more effective in inhibiting lattice relaxation, which would be beneficial for manufacturing metal silicide/Si1-xGex structure devices. Mechanisms were proposed to explain the large difference between the room-temperature and high-temperature sputtered samples. It is believed that the mixed Co-Si-Ge solution on high-temperature-sputtered samples is responsible for the different silicidation behaviors. (C) 2000 American Institute of Physics. [S0021-8979(00)02616-5].
Reduction of source/drain series resistance and its impact on device performance for PMOS transistors with raised Si1-xGex source/drain
(2000-09-01)
Huang, HJ
;
Chen, KM
;
Chang, CY
;
Chen, LP
;
Huang, GW
P-channel MOS transistors with raised Si1-xGex and Si source/drain (S/D) structure selectively grown by ultra high vacuum chemical vapor deposition (UHVCVD) were fabricated for the first time. The impacts of Si1-xGex and Si epitaxial S/D layer on SID series resistance and drain current of p-channel transistors were studied. Our result show that the new device with Si1-xGex raised S/D layer depicts only half the value of the specific contact resistivity and S/D series resistance (R-SD), compared to the device with Si raised S/D layer. The improvement is even more dramatic, when comparing to the conventional device without any raised Sin layer i.e., R-SD of the new device with Si1-xGex raised S/D is only about one fourth the value of the conventional device. Moreover, the device with raised SiGe S/D structure produces a 29% improvement in transconductance (g(m)) at an effective channel length of 0.16 mu m, These performance improvements, together with several inherent advantages such as self-aligned selective epitaxial growth (SEG) nature and the resultant T-shaped gate structure, make the new device with raised Si1-xGex S/D structure very attractive for future sub-0.1 mu m p-channel MOS transistors.
Improved electrical properties of shallow p(+)-n junction using selectively grown graded Si1-xGex epitaxial structure
(2000-12-01)
Huang, HJ
;
Chen, KM
;
Chang, CY
;
Huang, TY
;
Chen, LP
A strained boron-doped graded Si1-xGex structure consisting of layered Si1-xGex with increasing Ge mole fractions was studied as the solid diffusion source for forming a p(+)-n junction suitable for raised source/drain metal oxide semiconductor field effect transistor (MOSFET) application. The in situ doped graded Si1-xGex structure was selectively epitaxially grown (SEG) on the active region using ultrahigh vacuum chemical molecular epitaxy (UHVCME). Improved electrical characteristics, not possible with conventional uniform SEG Si1-xGex junction, are achieved with the graded SEG Si1-xGex junction. For the conventional uniform Si1-xGex junction, while a high Ge composition is necessary for reducing the specific contact resistance and the sheet resistance, such a high Ge composition, also results in a degraded ideality factor and a leaky junction. In contrast, a near-perfect SiGe/Si interface property is demonstrated with the graded Si1-xGex structure. Optimum specific contact resistance and the sheet resistance can be obtained by the graded Si1-xGex structure without suffering degraded junction leakage and ideality factor. These results indicate that the degree of misfit dislocation and the undesirable undercut effects could be effectively reduced by using the graded structure with its lower Ge composition close to the silicon substrate, while a low sheet resistance and specific contact resistance is preserved with its higher Ge composition at the top of the layered structure. (C) 2000 The Electrochemical Society. S1099-0062(00)08-111-6. All rights reserved.
The reaction of Co and Si1-xGex for MOSFET with poly-Si1-xGex gate
(2001-03-01)
Chen, KM
;
Huang, HJ
;
Chang, CY
;
Huang, TY
;
Huang, GW
The effects of Ge on the interfacial reaction between Co and poly-Si1-xGex materials were studied. Poly-Si1-xGex layers prepared at 580 degreesC by ultra-high vacuum chemical molecular epitaxy (UHVCME) system were subjected to Co silicidation at various rapid thermal annealing (RTA) temperatures ranging from 500 to 900 degreesC. From X-ray diffractometry (XRD), Co(Si1-xGex) cubic structure was formed with RTA temperature ranging from 500 to 800 degreesC for x = 0.09, while CoSi2 was formed at 900 degreesC. However, for x = 0.21, Co(Si1-yGey) persisted even after 900 degreesC RTA annealing, and CoSi2 was not found. These results indicate that Ge atoms retard the formation of CoSi2, As a result, the RTA temperature needed to obtain low sheet resistance has to be increased with increasing Ge content. Finally, p-channel metal-oxide-semiconductor (MOS) transistors with poly-Si1-xGex-gate have been successfully integrated with Co salicidation process. (C) 2001 Elsevier Science B.V. All rights reserved.

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