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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作,涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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Now showing 1 - 10 of 11
  • Item type:Item,
    16-GHz mHEMT Double-Quadrature Gilbert Down-Conversion Mixer With Polyphase Filters
    (2013)
    Hsiao, Yu-Chih
    ;
    Meng, Chinchun
    ;
    Su, Jen-Yi
    ;
    Yu, Sheng-Wen
    ;
    Huang, Guo-Wei
    A 16-GHz double-quadrature very low IF down conversion mixer with polyphase filters is demonstrated using 0.15-nm metamorphic high electron mobility transistor (mHEMT) technology. Due to the hgih cut-off frequency of mHEMT device, the image rejection Gilbert mixer works at 16 GHz. The polyphase filters are employed to generate differential quadrature signals and eliminate the image signal at RF/LO stages and IF stage, respectively, in the double quarture configuration. When RF and LO frequencies are designed around 16 GHz and an IF frequency is 32 MHz, The double-quadrature Gilbert down-converter has 32-dB image rejection ratio, 1.7-dB conversion gain, -5-dBm IP1dB, and 5-dBm IIP3. The die size is 3.0 mm x 3.2 mm.
  • Item type:Item,
    A high 2LO-to-RF isolation GaInP/GaAs HBT sub-harmonic Gilbert mixer using three-level topology
    (2006)
    Wu, Tzung-Han
    ;
    Meng, Chinchun
    ;
    Huang, Guo-Wei
    ;
    電信工程研究所
    ;
    Institute of Communications Engineering
    A 5.2 GHz three-level sub-harmonic downconversion Gilbert mixer using GaInP/GaAs HBT (Heterojunction Bipolar Transistor) technology is demonstrated in this paper. The LO frequency is half of the RF frequency for the three-level sub-harmonic mixer architecture; therefore, the RF frequency is 5.2004 GHz and LO frequency is 2.6 GHz. The conversion gain is 14.5 dB, IP(1dB') is -18 dBm, IIP(2) is 13 dBm and the IIP(3) is -5 dBm when the LO power equals to -8 dBm. The 2LO-to-RF leakage is about -83 dBm. The RF input return loss is better than -18 dB from DC to 6GHz.
  • Item type:Item,
    A 2.4, 5.2, and 5.7 GHz CMFB gilbert downconverter with low-voltage cascode current mirror input stage
    (2006-11-01)
    Tseng, Sheng-Che
    ;
    Meng, Chinchun
    ;
    Huang, Guo-Wei
    ;
    電信工程研究所
    ;
    Institute of Communications Engineering
    A triple-band (2.4, 5.2, and 5.7 GHz) CMFB downconversion micromixer with a low-voltage cascode current mirror RF input stage has been demonstrated by the 0.18-mu m CMOS technology in this letter. Micromixer has a single-ended RF input stage, the CMFB topology is adopted to improve the conversion gain, and a differential-to-single output buffer is used to convert the differential output of the mixer into a single-ended output. The fully integrated downconversion micromixer has the conversion gain of 12 dB, LO-to-IF isolation of 43 dB, LO-to-RF isolation of 48 dB, and RF-to-IF isolation of 18 dB at 2.4 GHz. The mixer has the conversion gain of 7.5 dB, LO-to-IF isolation of 54 dB, LO-to-RF isolation of 49.5 dB, and RF-to-IF isolation of 25 dB at 5.7 GHz. The total quiescent current consumption of the circuit is 7.6 mA. (c) 2006 Wiley Periodicals, Inc.
  • Item type:Item,
    Inductorless broadband RF front-end using 2 um GaInP/GaAs HBT technology
    (2007)
    Wu, Tzung-Han
    ;
    Meng, Chinchun
    ;
    Huang, Guo-Wei
    ;
    電信工程研究所
    ;
    Institute of Communications Engineering
    A GaInP/GaAs HBT broadband RF front-end consisting of a low noise wideband amplifier and a micromixer is demonstrated in this paper. The major advantage of this work is the elimination of inductors and thus the chip area can be greatly saved. The bandwidth of the RF front-end is up to 7 GHz. The measured conversion gain is higher than 25 dB from 1 GHz to 7 GHz and the noise figure of the RF front-end is less than 8 dB within the bandwidth.
  • Item type:Item,
    5.2 Ghz high isolation sige BICMOS CMFB Gilbert mixer
    (2007-02-01)
    Meng, Chinchun
    ;
    Wu, Tzung-Han
    ;
    Wu, Tse-Hung
    ;
    Huang, Guo-Wei
    ;
    電信工程研究所
    Active PMOS loads with common mode feedback to stabilize the bias points are employed in the Gilbert mixer loads to increase the mixer gain. Good device matching and the deep trench isolation technique in the SiGe HBT technology can improve the port-to-port isolations. A 16 dB conversion gain, Ip(ldB) = -21 dBm and IIP3 = - 11 dBm using 0.35 mu m SiGe BiCMOS Gilbert downconversion micromixer is demonstrated when RF = 5.2 GHz and LO = 5.17 GHz with -66 dB LO-IF, -52 dB LO-RF, and -24 dB RF-IF isolations. (c) 2006 Wiley Periodicals, Inc.
  • Item type:Item,
    A 5.2 GHz 47 dB image rejection double quadrature Gilbert downconverter using 0.35 mu m SiGe HBT technology
    (2007-02-01)
    Wu, Tzung-Han
    ;
    Meng, Chinchun
    ;
    Wu, Tse-Hung
    ;
    Huang, Guo-Wei
    ;
    電信工程研究所
    A 5.2 GHz 1 dB conversion gain, IP(1dB) = - 19 dBm and IIP(3)= -9dBm double quadrature Gilbert downconversion mixer with polyphase filters is demonstrated by using 0.35 mu m SiGe HBT technology. The image rejection ratio is better than 47 dB when LO=5.17 GHz and IF is in the range of 15 MHz to 45 MHz. The Gilbert downconverter has four-stage RC-CR IF polyphase filters for the image rejection. Polyphase filters are also used to generate LO and RF quadrature signals around 5 GHz in the double quadrature downconverter.
  • Item type:Item,
    GaInP/GaAs HBT sub-harmonic Gilbert mixers using stacked-LO and leveled-LO topologies
    (2007-05-01)
    Wu, Tzung-Han
    ;
    Tseng, Sheng-Che
    ;
    Meng, Chin-Chun
    ;
    Huang, Guo-Wei
    ;
    電信工程研究所
    This paper discusses and demonstrates the most popular sub-harmonic Gilbert mixers in 2-mu m GaInP/GaAs HBT technology. High two local oscillators (2LO)-to-RF isolation is important to alleviate the self-mixing problem of the sub-harmonic mixer. The demonstrated GaInP/GaAs HBT stacked-local oscillator (LO) mixer topology has achieved the best 2LO-to-RF isolation when compared with the previous literature. On the other hand, the leveled-LO sub-harmonic mixers have advantages in terms of the high speed and low dc supply voltage at the cost of much larger LO pumping power. Among all the structures, the bottom-LO sub-harmonic mixer has the lowest current consumption and the simplest circuit structure at the expense of the 2LO-to-RF isolation.
  • Item type:Item,
    GaInP/GaAs HB broadband inductorless receiver
    (2008-01-01)
    Wu, Tzung-Han
    ;
    Meng, Chinchun
    ;
    Huang, Guo-Wei
    ;
    電信工程研究所
    ;
    Institute of Communications Engineering
    A GaInP/GaAs HBT broadband RF front-end consisting of a low-noise wideband amplifier and a micromixer is demonstrated in this article. The major advantage of this work is the elimination of inductors and thus the chip area can be greatly saved. The bandwidth of the RF front-end is up to 7 GHz. The measured conversion gain is higher than 25 dB from 1 to 7 GHz and the noise figure of the RF front-end is less than 8 dB within the bandwidth. (c) 2007 Wiley Periodicals, Inc.
  • Item type:Item,
    Seven GHz high gain 0.18 mu m CMOS gilbert downconverter with wide-swing cascode current mirrors
    (2008-02-01)
    Tseng, Sheng-Che
    ;
    Meng, Chinchun
    ;
    Huang, Guo-Wei
    ;
    電信工程研究所
    ;
    Institute of Communications Engineering
    A downconversion micromixer with low-voltage cascode current mirrors at both transconductor and load stages has been implemented using the 0.18-mu m CMOS technology in this article. This micromixer has a single-to-differential RF input transconductor formed by the NMOS wide-swing cascade current mirror, while the PMOS wide-swing cascode current mirror is also employed to improve conversion gain. A super source follower is used at the output to reduce the output impedance and to transfer more power to the load. This fully integrated downconverter has the high conversion gain of 16 dB and high LO-to-IF isolation of 50 dB at 7 GHz. The current consumption of the mixer core is 1 mA at 1.8 V supply voltage. Thanks to the low-voltage operation property of the wide-swing cascode current mirror, six transistors can be stacked within 1.8 V supply voltage. (c) 2007 Wiley Periodicals, Inc.
  • Item type:Item,
    GILBERT UPCONVERSION MIXERS USING SINGLE-BAND/DUAL-BAND LC CURRENT COMBINERS
    (2009-07-01)
    Syu, Jin-Siang
    ;
    Meng, Chinchun
    ;
    Yen, Ying-Chieh
    ;
    Huang, Guo-Wei
    ;
    電信工程研究所
    The 0.35-mu m SiGe BiCMOS high linearity Gilbert upconverters are demonstrate in this article by utilizing NMOS and PMOS transconductance amplifiers (TCAs), respectively. To improve the linearity of a Gilber upconverter, the IF input TCA is rerplaced by a bias-offset differential pair. A reactive LC current combiner is used as the load of the Gilber mixer to double the output current. The upconverter with an NMOS TCA archieves the conversion gain of -4 dB, the OP(ldB) of -11 dBm, and the OIP(3) of 5.5 dBm, whereas the other one with a PMOS TCA has the conversion gain, OP(ldB), and OIP(3) of -6 dB, -11 dBm, and 9.5 dBm, respectively. Furthermore, the LC current combiner can be extended to a dual-band version. The 2.4/5.7 GHz dual-band upconverters is also demonstrated in this work. The conversion gain at 2.4/5.7 GHz is -3/-3.5 dB with the OP(ldB) of -15.5/-15 dBm and the OIP(3) of -2.5/-3 dBm, respectively. (C) 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 1718-1722, 2009; Published online in Wiley Interscience (www.interscience.wiley.com). DOI 10.1002/mop.24433