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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Huang, Tiao-YuanSubject: search.filters.subject.mobility

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Now showing 1 - 4 of 4
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    High-Performance Submicrometer ZnON Thin-Film Transistors With Record Field-Effect Mobility
    (2016-03)
    Kuan, Chin-I
    ;
    Lin, Horng-Chih
    ;
    Li, Pei-Wen
    ;
    Huang, Tiao-Yuan
    ;
    電子工程學系及電子研究所
    In this letter, we demonstrate 0.6-mu m ZnON thin-film transistors (TFTs) with the field-effect mobility of 71 cm(2)/V-sec, which to the best of our knowledge is the highest value ever reported on submicrometer oxide-semiconductor TFTs. The drive current, field-effect mobility, and subthreshold slope of ZnON TFTs are significantly improved as compared with their counterpart ZnO TFTs of the same channel dimensions and structure. Such an improvement in the field-effect mobility primarily results from a considerable reduction in the series source/drain (S/D) resistances because of suppression in an interfacial layer formation between Al S/D pads and the channel layer.
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    Correlating drain-current with strain-induced mobility in nanoscale strained CMOSFETs
    (2006-08-01)
    Lin, Hong-Nien
    ;
    Chen, Hung-Wei
    ;
    Ko, Chih-Hsin
    ;
    Ge, Chung-Hu
    ;
    Lin, Horng-Chih
    The correlation between channel mobility gain (Delta mu), linear drain-current gain (AIdlin), and saturation draincurrent gain (Delta I-dsat) of nanoscale strained CMOSFETs are reported. From the plots of Delta I-dlin versus Delta I-dsat and ballistic efficiency (B-sat,B-PSS), the ratio of source/drain parasitic resistance (R-sat,R-PSS) to channel resistance (R-CH,R-PSS) of strained CMOSFETs can be extracted. By plotting Delta mu versus Delta I-dlin, the efficiency of Delta mu translated to Delta I-dlin is higher for strained pMOSFETs than strained nMOSFETs due to smaller R-SD,R-PSS-to-R-CH,R-PSS ratio of strained pMOSFETs. It suggests that to exploit strain benefits fully, the R-SD,R-PSS reduction for strained nMOSFETs is vital, while for strained pMOSFETs the Delta I-dli -to-Delta mu sensitivity is maintained until R-SD,R-PSS becomes comparable to/or higher than R-CH,R-PSS.
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    Characterizing the channel backscattering behavior in nanoscale strained complementary metal oxide semiconductor field-effect transistors
    (2006-11-01)
    Lin, Hono-Nien
    ;
    Chen, Hung-Wei
    ;
    Ko, Chih-Hsin
    ;
    Ge, Chung-Hu
    ;
    Lin, Horng-Chih
    This work investigates the impact of different uniaxial strain polarities on channel backscattering in nanoscale complementary metal oxide semiconductor field-effect transistor (CMOSFET). Two carrier statistics, nondegenerate and degenerate-limited, are employed to extract the channel backscattering ratio, ballistic efficiency, and related backscattering factors. While the channel length scales down and the channel stress level increases further, the modulation of channel backscattering ratio, i.e., improved (degraded) by uniaxial tensile (compressive) strain, becomes more prominent. This observation holds true under both carrier statistics, which implies that the nondegenerate case with simple mathematics can be fairly used for evaluation. In addition, the correlation between strain-enhanced mobility gain and drain current improvement is found to be predicted well by the ballistic efficiency deduced with the nondegenerate carrier statistics.
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    Origins of Performance Enhancement in Independent Double-Gated Poly-Si Nanowire Devices
    (2010-04-01)
    Hsu, Hsing-Hui
    ;
    Lin, Horng-Chih
    ;
    Huang, Tiao-Yuan
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    In this paper, we characterize and compare the characteristics of a poly-Si nanowire (NW) device with independent double-gated configuration under different operation modes. In the device, the tiny NW channels are surrounded by an inverted-T-shaped gate and a top gate. It is found that the device under double-gate (DG)mode exhibits significantly better performance with respect to the two single-gate (SG) modes, as indicated by a higher current drive than the combined sum of the two SG modes and a smaller subthreshold swing of less than 100 mV/dec. Origins of such improvement have been identified to be due to the elimination of the back-gate effect as well as an enhancement in the effective mobility with the DG operation.