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Single mode 1.27-mu m InGaAS : Sb-GaAs-GaAsP quantum well vertical cavity surface emitting lasers
(2005-01-01)
Kuo, HC
;
Chang, YA
;
Chang, YH
;
Chu, JT
;
Tsai, MY
1.27 mu m InGaAs:Sb-GaAs-GaAsP vertical cavity surface emitting lasers (VCSELs) were grown by metalorganic chemical vapor deposition (MOCVD) and exhibited excellent performance and temperature stability. The threshold current changes from 1.8 to 1.1 mA and the slope efficiency falls less than similar to 35% as the temperature raised from room temperature to 70 degrees C. With a bias current of only 5mA, the 3dB modulation frequency response was measured to be 8.36 GHz, which is appropriate for 10 Gb/s operation. The maximal bandwidth is measured to be 10.7 GHz with modulation current efficiency factor (MCEF) of similar to 5.25 GHz/(mA)(1/2). These VCSELs also demonstrate high-speed modulation up to 10 Gb/s from 25 degrees C to 70 degrees C.
Fabrication and characterization of In0.25Ga0.75N/GaN multiple quantum wells embedded in nanorods
(2005-10-01)
Hsueh, TH
;
Sheu, JK
;
Huang, HW
;
Chang, YH
;
Ou-Yang, MC
ln(0.25)Ga(0.75)N/GaN multiple quantum wells embedded in nanorods with diameters of 60-100nm were fabricated by inductively coupled plasma reactive ion etching with Cl-2/Ar plasma. The strong optical emission of the nanorods, observed by micro-photoluminescence measurement at 80 K, reveals a large blue shift of about 90meV and an increase in photoluminescence intensity density of more than 17-fold, compared with that of the as-grown wafer under the same excitation power density of 80W/cm(2). These nanostructures have a high potential for application in efficient GaN-based vertical cavity emitters.
Simulation of 1300-nm In0.4Ga0.6As0.986N0.014/GaAs1-xNx quantum-well lasers with various GaAs1-xNx strain compensated barriers
(2004-11-01)
Chang, YA
;
Kuo, HC
;
Chang, YH
;
Wang, SC
;
光電工程學系
In this article, the laser performance of the 1300-nm In0.4Ga0.6As0.986N0.014/GaAs1 - xNx quantum-well (QW) lasers with various GaAs1 - xNx strain compensated barriers (x = 0%, 0.5%, 1%, and 2%) has been numerically investigated with a laser technology integrated simulation program. The simulation results suggest that with x = 0% and 0.5% can have better optical gain properties and high characteristic temperature coefficient To values of 110 and 94 K at the temperature range of 300-370 K. As the nitrogen composition in GaAs1 - xNx barrier increases more than 1% the laser performance degrades rapidly and the To value decreases to 87 K at temperature range of 300-340 K. This can be attributed to the decrease of conduction band carrier confinement potential between In0.4Ga0.6As0.986N0.014 QW and GaAs1 - xNx barrier and the increase of electronic leakage current. Finally, the temperature dependent electronic leakage current in the InGaAsN/GaAs1 - xNx quantum-well lasers are also investigated. (C) 2004 Elsevier B.V. All rights reserved.
High-speed modulation of 850 nm InGaAsP/InGaP strain-compensated VCSELs
(2003-07-10)
Kuo, HC
;
Chang, YS
;
Lai, FY
;
Hsueh, TH
;
Laih, LH
High performance 850 um InGaAsP/InGaP strain-compensated vertical cavity surface emitting lasers (VCSELs) are demonstrated with superior output characteristics and modulation bandwidths up to 12.5 Gbit/s from 25 to 85degreesC.
Performance of 850 nm AlGaAs/GaAs implanted VCSELs utilizing silicon implantation induced disordering
(2003-10-01)
Lai, FI
;
Hsueh, TH
;
Chang, YH
;
Shu, WC
;
Lai, LH
In this paper, we report a novel implanted vertical surface emitting lasers (VCSELs) utilizing silicon implantation induced disordering. The VCSELs exhibit kink-free current-light Output performance with threshold currents similar to2.4 mA, and the slope efficiencies similar to0.45 W/A. The threshold current change with temperature is minimal and the slope efficiency drops less than similar to30% when the substrate temperature is raised to 90 degreesC. The eye diagram of VCSEL operating at 2.125 Gb/s with 7 mA bias and 10 dB extinction ratio shows very clean eye with jitter less than 30 ps. We have accumulated life test data up to 5000 It at 100 degreesC/20 mA with exceptional reliability and the WHTOL (high temperature and high humidity 85 degreesC/85 operating lifetime) biased at 8 mA has passed over 2000 h. (C) 2003 Elsevier Ltd. All rights reserved.
High-speed characteristics of large-area single-transverse-mode vertical-cavity surface-emitting lasers
(2003-10-16)
Hsueh, TH
;
Kuo, HC
;
Lai, FI
;
Laih, LH
;
Wang, SC
The single transverse mode operation of VCSELs with low threshold current (I-th) of 1.5 mA, slope efficiencies about 0.35 W/A, high optical output power of 3.8 mW and speed performance of 10 Gbit/s is reported. The laser has continuous-wave operation and employs oxygen implantation, MOCVD regrowth and selective oxidation on semi-insulating GaAs substrate.
Characteristics of stable emission GaN-based resonant-cavity light-emitting diodes
(2004-01-19)
Lin, CF
;
Yao, HH
;
Lu, JW
;
Hsieh, YL
;
Kuo, HC
The resonant-cavity light-emitting diode (RC-LED) structure was grown by MOCVD. The structure of RC-LED consisted of a 3lambda InGaN/GaN MQW LED cavity between the top TiO2/SiO2 DBR (81.7%, reflectance) and the bottom AlN/GaN DBR (90.4%) stack. A stable 410 nm emission peak and a low thermally induced red-shift effect (0.12 nm/kA/cm(2)) were measured by varying the injection current density. The light output power of the full RC-LED device was three times higher than the RC-LED without top TiO2/SiO2 DBR layers under 600 A/cm(2) inject current density. The narrow line width of 7.4 nm, emission peak localization at 410 nm, and three times higher output power were caused by the resonance effect in this vertical cavity structure. (C) 2003 Published by Elsevier B.V.
MOCVD growth of high-performance InGaAsP/InGaP strain-compensated VCSELs with 850 nm emission wavelength
(2004-01-19)
Kuo, HC
;
Chang, YS
;
Lin, CF
;
Lu, TC
;
Wang, SC
We present in this paper the metalorganic chemical vapor deposition growth and characterization of high-performance 850 nm InGaAsP/InGaP strain-compensated MQWs vertical-cavity surface-emitting lasers (VCSELs). The InGaAsP/InGaP MQWs growth condition was optimized using photoluminescence. These VCSELs exhibit superior characteristics, with threshold currents similar to 0.4 mA, and slope efficiencies similar to 0.6 mW/mA. The threshold current change is less than 0.2 mA and the slope efficiency drops by less than similar to 30% when the substrate temperature is raised from room temperature to 85degreesC. These VCSELs also demonstrate high-speed modulation bandwidth up to 12.5 Gbit/s from 25degreesC to 85degreesC. (C) 2003 Elsevier B.V. All rights reserved.
MOCVD growth of AlN/GaN DBR structures under various ambient conditions
(2004-02-15)
Yao, HH
;
Lin, CF
;
Kuo, HC
;
Wang, SC
;
光電工程學系
The high-reflectivity AlN/GaN distributed Bragg reflector (DBR) structures were realized by metal organic chemical vapor deposition (MOCVD) growth under pure N-2 ambient for AlN epilayer growth. The highest peak reflectivity of about 94.5% with a stopband width of 18 nm at a center wavelength of 442 nm was obtained. For the DBR structure with AIN layer grown under mixture of N-2/H-2 and pure H-2 conditions, the center wavelength was blue-shifted to 418 and 371 nm and the peak reflectivity also showed a reduction to 92% and 79%, respectively. The stopband width also decreases with increasing H-2 contents. The surface roughness and the grain size of the grown DBR structures showed an increase with increasing the H-2 ambient gas ratio. For realization of a high reflectivity and broad bandwidth of AlN/ GaN DBR by using the MOCVD growth method, the pure N-2d ambient gas for growth of AIN layer should be preferable and optimal condition. (C) 2003 Elsevier B.V. All rights reserved.
Comparisons of InP/InGaAlAs and InAlAs/InGaAlAs distributed Bragg reflectors grown by metalorganic chemical vapor deposition
(2004-02-25)
Lu, TC
;
Tsai, JY
;
Kuo, HC
;
Wang, SC
;
光電工程學系
Long wavelength vertical cavity surface emitting lasers (VCSELs) are considered the best candidates for the low cost reliable light emitters in fiber communications. The low refractive index contrast in the conventional InP-based lattice-matched distributed Bragg reflectors (DBRs), InP/InGaAsP, impeded the development of 1.3-1.5 mum VCSELs. However, the monolithic InP-based lattice-matched DBRs are still most attractive and desirable. The InP/InGaAlAs and InAlAs/InGaAlAs DBRs with larger refractive index contrast than the conventional InP/InGaAsP DBRs have been demonstrated recently. In this report, we compare these two material systems in terms of optical and electrical properties of DBRs. We found the InP/InGaAlAs DBRs have better electrical and optical properties, while the InAlAs/InGaAlAs DBRs have much lower growth complexity. (C) 2003 Elsevier B.V. All rights reserved.

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