High-speed modulation of 850 nm InGaAsP/InGaP strain-compensated VCSELs
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DOI
10.1049/el:20030672
Abstract
High performance 850 um InGaAsP/InGaP strain-compensated vertical cavity surface emitting lasers (VCSELs) are demonstrated with superior output characteristics and modulation bandwidths up to 12.5 Gbit/s from 25 to 85degreesC.