High-speed modulation of 850 nm InGaAsP/InGaP strain-compensated VCSELs

標題:	High-speed modulation of 850 nm InGaAsP/InGaP strain-compensated VCSELs
作者:	Kuo, HC Chang, YS Lai, FY Hsueh, TH Laih, LH Wang, SC 光電工程學系 Department of Photonics
公開日期:	10-七月-2003
摘要:	High performance 850 um InGaAsP/InGaP strain-compensated vertical cavity surface emitting lasers (VCSELs) are demonstrated with superior output characteristics and modulation bandwidths up to 12.5 Gbit/s from 25 to 85degreesC.
URI:	http://dx.doi.org/10.1049/el:20030672 http://hdl.handle.net/11536/27719
ISSN:	0013-5194
DOI:	10.1049/el:20030672
期刊:	ELECTRONICS LETTERS
Volume:	39
Issue:	14
起始頁:	1051
結束頁:	1053
顯示於類別：	期刊論文

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