| 標題: | High-speed modulation of 850 nm InGaAsP/InGaP strain-compensated VCSELs |
| 作者: | Kuo, HC Chang, YS Lai, FY Hsueh, TH Laih, LH Wang, SC 光電工程學系 Department of Photonics |
| 公開日期: | 10-Jul-2003 |
| 摘要: | High performance 850 um InGaAsP/InGaP strain-compensated vertical cavity surface emitting lasers (VCSELs) are demonstrated with superior output characteristics and modulation bandwidths up to 12.5 Gbit/s from 25 to 85degreesC. |
| URI: | http://dx.doi.org/10.1049/el:20030672 http://hdl.handle.net/11536/27719 |
| ISSN: | 0013-5194 |
| DOI: | 10.1049/el:20030672 |
| 期刊: | ELECTRONICS LETTERS |
| Volume: | 39 |
| Issue: | 14 |
| 起始頁: | 1051 |
| 結束頁: | 1053 |
| Appears in Collections: | Articles |
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- Improvement of high speed performance for 10-Gb/s 850-nm VCSELs using InGaAsP/InGaP strain-compensated MQWs / Chang, YS;Kuo, HC;Lai, FI;Chang, YA;Laih, LH
- MOCVD growth of high-performance InGaAsP/InGaP strain-compensated VCSELs with 850 nm emission wavelength / Kuo, HC;Chang, YS;Lin, CF;Lu, TC;Wang, SC
- Fabrication of high speed and reliable 850nm oxide-confined VCSELs for 10Gb/s data communication / Kuo, HC;Chang, YH;Chang, YA;Tseng, KF;Laih, LH
- Fabrication and characteristics of high-speed oxide-confined VCSELs using InGaAsP-InGaP strain-compensated MQWs / Chang, YH;Kuo, HC;Lai, FI;Chang, YA;Lu, CY
- Theoretical and experimental analysis on InAlGaAs/AlGaAs active region of 850-nm vertical-cavity surface-emitting lasers / Chang, YA;Chen, JR;Kuo, HC;Kuo, YK;Wang, SC
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